Monolayer hBN RRAM with High DC Endurance and Low Operation Voltages using an Oxidized Top Electrode

The rapid evolution of artificial intelligence technologies has escalated the need for compact, high-density memory solutions [1] . Monolayer hexagonal boron nitride resistive random access memory (ML hBN RRAM) emerges as a particularly promising candidate due to its simple, ultra-thin metal-insulator-metal structure. However, these atomristor devices usually wear out quickly, with a maximum of 100 DC linear sweeps reported in existing studies [2] . Our research has led to a groundbreaking enhancement: by integrating a conductive oxidized metal top electrode into monolayer hBN RRAM, we have significantly extended its durability, achieving over 2000 cycles at low operational voltages below 0.5 V. These devices also have demonstrated the ability to endure up to continuous 400 cycles under μs pulse voltage, and even more pulse cycles by reactivating them by DC sweeps. This is the first time monolayer 2D material RRAM has exhibited such a high number of DC cycles and shows the potential for higher pulse-operated endurance and future energy-efficient computing applications.

The rapid evolution of artificial intelligence technologies has escalated the need for compact, high-density memory solutions [1] . Monolayer hexagonal boron nitride resistive random access memory (ML hBN RRAM) emerges as a particularly promising candidate due to its simple, ultra-thin metal-insulator-metal structure. However, these atomristor devices usually wear out quickly, with a maximum of 100 DC linear sweeps reported in existing studies [2] . Our research has led to a groundbreaking enhancement: by integrating a conductive oxidized metal top electrode into monolayer hBN RRAM, we have significantly extended its durability, achieving over 2000 cycles at low operational voltages below 0.5 V. These devices also have demonstrated the ability to endure up to continuous 400 cycles under μs pulse voltage, and even more pulse cycles by reactivating them by DC sweeps. This is the first time monolayer 2D material RRAM has exhibited such a high number of DC cycles and shows the potential for higher pulse-operated endurance and future energy-efficient computing applications.