Processing math: 33%
2-6GHz 30W GaN Power Amplifier Using Reactive Matching Technique | IEEE Conference Publication | IEEE Xplore

2-6GHz 30W GaN Power Amplifier Using Reactive Matching Technique


Abstract:

This paper introduces a compact 2-6 GHz power amplifier (PA) MMIC utilizing Sanan’s 0.25-\mum gallium nitride high-electron-mobility transistor (GaN HEMT) technology. T...Show More

Abstract:

This paper introduces a compact 2-6 GHz power amplifier (PA) MMIC utilizing Sanan’s 0.25-\mum gallium nitride high-electron-mobility transistor (GaN HEMT) technology. The design focuses on implementing the output matching network (OMN). Meanwhile, the reactive matching (RM) technique and direct parallel power combiners are employed to reduce power loss and chip area in this PA. Under a drain voltage of 28 V, the GaN PA achieves an average output power (Pout) of 45 dBm (31W) and an average power gain of 19 dB, with a power-added efficiency (PAE) ranging from 27% to 40% over the entire bandwidth. The proposed chip has an area of 4.5\times 3.4 mm2 and an average power density of 5 W/mm2.
Date of Conference: 20-23 October 2023
Date Added to IEEE Xplore: 25 December 2023
ISBN Information:
Conference Location: Nanjing, China
References is not available for this document.

I. Introduction

Broadband power amplifier MMICs are widely used in electronic systems such as electronic warfare and multifunction systems. Their indicators, including Pout and PAE, have a significant impact on the performance of these systems [1] –[6]. Since the GaN HEMT on SiC substrate shows advantages of high breakdown voltage, high current carrying capacity, and high power density in RF applications, there are numerous GaN PAs with high power and high efficiency being proposed [7] –[14]. To date, various novel techniques have been employed, including stacked-FET technology, reactive filter synthesis technology, real frequency technology, and asymmetric magnetically coupled resonator (MCR) technology.

Select All
1.
J. Zhang, L. Nie, S. Ma and J. Ren, "A 10-18 GHz GaN Power Amplifier Based on Asymmetric Magnetically Coupled Resonator", 2020 IEEE 63rd International Midwest Symposium on Circuits and Systems (MWSCAS), pp. 802-805, 2020.
2.
Q. Lin et al., "A 2–20-GHz 10-W High-Efficiency GaN Power Amplifier Using Reactive Matching Technique", IEEE Transactions on Microwave Theory and Techniques, vol. 68, no. 7, pp. 3148-3158, Jul. 2020.
3.
M. A. Gonzalez-Garrido, J. Grajal, P. Cubilla, A. Cetronio, C. Lanzieri, M. Uren, et al., "2-6 GHz GaN MMIC Power Amplifiers for Electronic Warfare Applications", 2008 European Microwave Integrated Circuit Conference, pp. 83-86, Oct. 2008.
4.
H.-Q. Tao, W. Hong, B. Zhang and X.-M. Yu, "A Compact 60W X-Band GaN HEMT Power Amplifier MMIC", IEEE Microwave and Wireless Components Letters, vol. 27, no. 1, pp. 73-75, Jan. 2017.
5.
A V Goutham Kumar, S R Shruthi, K Sreelakshmi and P Shanthi, "DESIGN AND SIMULATION OF MULTIBAND POWER AMPLIFIER", International Journal of Electrical and Electronic Engineering & Telecommunications, vol. 3, no. 3, pp. 75-81, July 2014.
6.
Jill Mayeda, Clint Sweeney, Donald Y. C. Lie and Jerry Lopez, "Broadband High-Efficiency Millimeter-Wave Power Amplifiers in 22nm CMOS FD-SOI with Fixed and Adaptive Biasing", International Journal of Electrical and Electronic Engineering & Telecommunications, vol. 11, no. 6, pp. 385-391, November 2022.
7.
S. Mao, X. Liu, Y. Guo, Y. Wu and Y. Xu, "A 2-6 GHz Power Amplifier with 45% PAE in 0.25 μ GaN Technology", 2019 IEEE Asia-Pacific Microwave Conference (APMC), pp. 1298-1300, Dec. 2019.
8.
X. Zhou, L. Roy and R. E. Amaya, "1 W Highly Efficient Ultra-Broadband Non-Uniform Distributed Power Amplifier in GaN", IEEE Microwave and Wireless Components Letters, vol. 23, no. 4, pp. 208-210, Apr. 2013.
9.
B. Liu, M. Mao, D. Khanna, C.-C. Boon, P. Choi and E. A. Fitzgerald, "A Novel 2.6–6.4 GHz Highly Integrated Broadband GaN Power Amplifier", IEEE Microwave and Wireless Components Letters, vol. 28, no. 1, pp. 37-39, 2018.
10.
D.-W. Kim, "An Output Matching Technique for a GaN Distributed Power Amplifier MMIC Using Tapered Drain Shunt Capacitors", IEEE Microwave and Wireless Components Letters, vol. 25, no. 9, pp. 603-605, Sep. 2015.
11.
H.-Y. Huang, J.-J. Huang, J.-B. Cai and H.-Y. Chang, "A 12-to-17 GHz Power Amplifier Using T-Model Matching Network in 0.25-μm GaN pHEMT Technology", 2019 IEEE Asia-Pacific Microwave Conference (APMC), pp. 980-982, 2019.
12.
X. Yu, H. Tao and W. Hong, "A Ka band 15W power amplifier MMIC based on GaN HEMT technology", 2016 IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition (iWEM), pp. 1-3, May 2016.
13.
J. R. Powell, D. J. Shepphard and S. C. Cripps, "High Efficiency GaN 2.5 to 9 GHz Power Amplifiers Realized in Multilayer LCP Hybrid Technology", IEEE Microwave and Wireless Components Letters, vol. 26, no. 6, pp. 440-442, Jun. 2016.
14.
C. T. Nghe, G. Zimmer and G. Boeck, "Two-stage harmonically tuned 50 W GaN-HEMT wideband power amplifier", 2016 46th European Microwave Conference (EuMC), pp. 576-579, 2016.
15.
M. Roberg, S. Schafer, O. Marrufo and T. Hon, "A 2-20 GHz Distributed GaN Power Amplifier Using a Novel Biasing Technique", 2019 IEEE MTT-S International Microwave Symposium (IMS), pp. 694-697, Jun. 2019.
16.
H. Park, H. Nam, K. Choi, J. Kim and Y. Kwon, "A 6–18-GHz GaN Reactively Matched Distributed Power Amplifier Using Simplified Bias Network and Reduced Thermal Coupling", IEEE Transactions on Microwave Theory and Techniques, vol. 66, no. 6, pp. 2638-2648, Jun. 2018.
17.
H.-F. Wu et al., "A Compact Ultrabroadband Stacked Traveling-Wave GaN on Si Power Amplifier", IEEE Transactions on Microwave Theory and Techniques, vol. 66, no. 7, pp. 3306-3314, Jul. 2018.
18.
H. Wu, Q. Lin, L. Zhu, S. Chen, Y. Chen and L. Hu, "A 2 to 18 GHz Compact High-Gain and High-Power GaN Amplifier", 2019 IEEE MTT-S International Microwave Symposium (IMS), pp. 710-713, Jun. 2019.

References

References is not available for this document.