I. Introduction
Broadband power amplifier MMICs are widely used in electronic systems such as electronic warfare and multifunction systems. Their indicators, including Pout and PAE, have a significant impact on the performance of these systems [1] –[6]. Since the GaN HEMT on SiC substrate shows advantages of high breakdown voltage, high current carrying capacity, and high power density in RF applications, there are numerous GaN PAs with high power and high efficiency being proposed [7] –[14]. To date, various novel techniques have been employed, including stacked-FET technology, reactive filter synthesis technology, real frequency technology, and asymmetric magnetically coupled resonator (MCR) technology.