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2-6GHz 30W GaN Power Amplifier Using Reactive Matching Technique | IEEE Conference Publication | IEEE Xplore

2-6GHz 30W GaN Power Amplifier Using Reactive Matching Technique


Abstract:

This paper introduces a compact 2-6 GHz power amplifier (PA) MMIC utilizing Sanan’s 0.25-\mum gallium nitride high-electron-mobility transistor (GaN HEMT) technology. T...Show More

Abstract:

This paper introduces a compact 2-6 GHz power amplifier (PA) MMIC utilizing Sanan’s 0.25-\mum gallium nitride high-electron-mobility transistor (GaN HEMT) technology. The design focuses on implementing the output matching network (OMN). Meanwhile, the reactive matching (RM) technique and direct parallel power combiners are employed to reduce power loss and chip area in this PA. Under a drain voltage of 28 V, the GaN PA achieves an average output power (Pout) of 45 dBm (31W) and an average power gain of 19 dB, with a power-added efficiency (PAE) ranging from 27% to 40% over the entire bandwidth. The proposed chip has an area of 4.5\times 3.4 mm2 and an average power density of 5 W/mm2.
Date of Conference: 20-23 October 2023
Date Added to IEEE Xplore: 25 December 2023
ISBN Information:
Conference Location: Nanjing, China

I. Introduction

Broadband power amplifier MMICs are widely used in electronic systems such as electronic warfare and multifunction systems. Their indicators, including Pout and PAE, have a significant impact on the performance of these systems [1] –[6]. Since the GaN HEMT on SiC substrate shows advantages of high breakdown voltage, high current carrying capacity, and high power density in RF applications, there are numerous GaN PAs with high power and high efficiency being proposed [7] –[14]. To date, various novel techniques have been employed, including stacked-FET technology, reactive filter synthesis technology, real frequency technology, and asymmetric magnetically coupled resonator (MCR) technology.

References

References is not available for this document.