Abstract:
Summary form only given. We fabricated semiconductor ring mode-locked lasers using curved passive deep-ridge waveguide. A low threshold current of 25 mA was obtained by a...Show MoreMetadata
Abstract:
Summary form only given. We fabricated semiconductor ring mode-locked lasers using curved passive deep-ridge waveguide. A low threshold current of 25 mA was obtained by a ring laser without a saturable absorber. We also achieved hybrid mode-locking of the R-MLLDs at 29.5, 41.2, and 61.7 GHz with maximum optical modulation indices of 91.4, 87.6 and 42.0%, respectively.
Published in: Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges
Date of Conference: 24-24 May 2002
Date Added to IEEE Xplore: 15 April 2003
Print ISBN:1-55752-706-7
References is not available for this document.
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