A universal ion implantation model for all species into single-crystal silicon

A physically based model for ion implantation of any species into single crystal silicon has been developed, tested and implemented in the ion implant simulator, UT-MARLOWE. In this model, an interpolation scheme, based on mathematical properties of ion-target interatomic potential, was employed and implemented to calculate the scattering process. Using this scheme, the resulting energy, direction and momentum of the ion and target can be derived from the existing scattering tables of UT-MARLOWE without calculating the entire scattering process. The method has advantages in terms of both accuracy and computational efficiency, as well as significantly reduced cost of code development. The impurity profiles and damage profiles predicted by the model simulations have been compared with secondary ion mass spectroscopy (SIMS) and Rutherford backscattering spectrometry (RBS), and excellent agreement with experimental data has been achieved.

I. Introduction

As devices scale to deep-submicron geometries, ion implantation continues to play a key role in microelectronics fabrication [1]. In addition to traditional dopant species such as B, As, and P, more and more new species are being implanted for various purposes. Accordingly, models that can simulate the ion implantation processes of these species into silicon are very desirable.