I. Introduction
Development of millimeter-wave (mm-wave) subsystems has grown very significantly [1], [2]. Compared with standard CMOS technology, advanced SiGe-based ones can support higher operation frequencies to realize mm-wave power amplifiers (PAs) [3]. Moreover, SiGe-based technologies can be used to realize full system on chip (SoC) with reduced cost when compared with III/V technology [4]. Many passive circuits are necessary to achieve complete systems in this technology, like directional couplers (including rat-races), power dividers, filters. These circuits mainly depend on transmission lines (TLs) when dealing with frequencies exceeding about 100 GHz.