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Electrically driven lasing of a topological defect in a vertical cavity laser array
Philipp Gagel;Oleg Egorov;Franciszek Dzimira;Johannes Beierlein;Monika Emmerling;Adriana Wolf;Fauzia Jabeen;Christian Schneider;Sven Höfling;Sebastian Klembt
2023 Conference on Lasers and Electro-Optics (CLEO)
Year: 2023 | Conference Paper |
Topological insulator vertically-emitting laser array
Alex Dikopoltsev;Tristan H. Harder;Eran Lustig;Oleg A. Egorov;Johannes Beierlein;Adriana Wolf;Monika Emmerling;Christian Schneider;Sven Höfling;Mordechai Segev;Sebastian Klembt
2021 Conference on Lasers and Electro-Optics (CLEO)
Year: 2021 | Conference Paper |
Electrically driven exciton-polariton lasers
S. Höfling;C. Schneider;A. Rahimi-Iman;N. Y. Kim;J. Fischer;I. G. Savenko;M. Amthor;M. Lermer;A. Wolf;L. Worschech;V. D. Kulakovskii;I. A. Shelykh;M. Kamp;S. Reitzenstein;Y. Yamamoto;A. Forchel
2013 IEEE 2nd International Workshop "Nonlinear Photonics" (NLP*2013)
Year: 2013 | Conference Paper |
Exciton-polaritons are hybrid light-matter quasiparticles. They are composite and interacting bosons which can condense dynamically in a single-particle ground state via stimulated scattering. The formation of exciton-polaritons under electrical pumping has been demonstrated in quasi two dimensional systems [1-3]. In this work, we discuss the non-linear polariton emission caused by stimulated scat...Show More
Ultra-short GaAs/AlGaAs quantum-cascade micro-lasers based on monolithically integrated semiconductor-air Bragg-mirrors
S. Hofling;R. Kallweit;A. Wolf;M. Emmerling;J.P. Reithmaier;A. Forchel
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.
Year: 2004 | Conference Paper |
Square- and racetrack-lasers as active components for monolithically integrated optoelectronic devices
L. Bach;A. Wolf;J.P. Reithmaier;A. Forchel;J.L. Gentner;L. Goldstein
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)
Year: 2002 | Conference Paper |
Cited by: Papers (3)
Deeply etched square and rectangular racetrack lasers with diameters from 200 /spl mu/m down to 30 /spl mu/m were fabricated by electron cyclotron resonance reactive ion etching. All devices were operated in continuous-wave mode at room temperature. Threshold currents as low as 30 mA for a square laser with 30 /spl mu/m diameter were achieved. For the smallest devices with 30 /spl mu/m diameter a ...Show More
Two- and three-sectional laterally coupled DBR laser fabricated by focused ion beam lithography
L. Bach;A. Wolf;J.P. Reithmaier;A. Forchel;J.L. Gentner;L. Goldstein
Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307)
Year: 2002 | Conference Paper |
By using focused ion beam lithography, high performance 1.55 /spl mu/m emitting distributed Bragg reflector lasers were realized suitable for high speed optical telecommunication. Threshold currents of 8 mA and continuous wave efficiencies of 0.37 W/A for 600 /spl mu/m long devices were achieved. Stable single mode emission with side mode suppression ratios of > 40 dB were observed for the entire ...Show More
1.3 /spl mu/m quantum dot DFB lasers
F. Klopf;R. Krebs;A. Wolf;M. Emmerling;J.P. Reithmaier;A. Forchel
Proceedings 27th European Conference on Optical Communication (Cat. No.01TH8551)
Year: 2001 | Conference Paper |
Using laterally patterned metal gratings, single mode operation of 1.3 /spl mu/m InAs/GaInAs quantum dot lasers has been achieved. At room temperature the lasers exhibit threshold currents as low as 17 mA, output powers of up to 8 mW (cw) and very stable single mode emission with side mode suppression ratios of well above 40 dB.Show More
Edge-emitting microlasers with a single quantum dot active layer
S. Rennon;K. Avary;F. Klopf;A. Wolf;M. Emmerling;J.P. Reithmaier;A. Forchel
Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)
Year: 2000 | Conference Paper |
We have realized edge emitting microlasers on a GaInAs-AlGaAs quantum dot laser structure with deeply etched DBR mirrors. Lasers with 40 /spl mu/m cavity length show CW operation at room temperature, exhibiting threshold currents below 4 mA. CW output powers exceed 5 mW for 40 /spl mu/m long lasers emitting from the ground state at 980 nm.Show More
Ultrashort quantum dot microlasers
S. Rennon;K. Avary;F. Klopf;A. Wolf;M. Emmerling;J.P. Reithmaier;A. Forchel
We have fabricated high performance ultrashort quantum dot microlasers based on deeply etched distributed Bragg reflector (DBR) mirrors with cavity lengths down to 16 /spl mu/m and threshold currents as low as 1.2 mA for a 30 /spl mu/m and 3.2 mA for a 20 /spl mu/m cavity length, respectively. The microlasers were fabricated on a GaInAs/AlGaAs laser structure with a single layer of self organized ...Show More
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