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Rod Burt - IEEE Xplore Author Profile

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Author details

Rod Burt

Also published under: R. Burt

Publications

6

Citations

156

Publications by Year

20052012

Co-Authors:

Ning DongG. Peter FangPeng LiM. MilevParijat Mukherjee

Show All Co-Authors (6)

Rod Burt

Also published under: R. Burt

Affiliation

Texas Instruments

Inc.

Tucson, AZ, USA

Publication Topics

Complex Poles,
Dominant Pole,
Transfer Function,
Analog Circuits,
Analog Integrated Circuits,
Bounding Box,
Efficient Algorithm,
Fundamental Frequency,
Large Circuits,
Order Of Expansion,
Original Algorithm,
Phase Margin

Biography

Rod Burt received the B.S.E.E. degree from the University of Arizona, Tucson.,Since 1982, he has been with Texas Instruments (formerly Burr-Brown), Tucson, AZ. He is currently an Analog IC Design Engineer and TI Fellow. His career has been focused on the development of precision analog integrated circuits. He holds 33 U.S. patents.(Based on document published on 16 August 2012).

Publications

6

Citations

156

Publications by Year

20052012

Co-Authors:

Ning Dong
G. Peter Fang
Peng Li
M. Milev
Parijat Mukherjee

Show All Co-Authors (6)

Author's Published Works

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Showing 1-8 of 8 results

Conferences (7)

Journals (1)

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T. Miyagi(5)
T. Sudo(3)
Takeshi Miyagi(3)
S. Kimijima(3)
Tatsuya Ohguro(2)
Corporate Manufacturing Engineering Center, Toshiba Corporation, Yokohama, Japan(2)
Center for Semiconductor Research & Development, Semiconductor Company(1)
Corporate Manufacturing Engineering Center, Toshiba Corporation(1)
Research and Development Center, Toshiba Corporation, Kawasaki, Japan(1)
Materials and Devices Research Laboratories, Toshiba Corporation, Yokohama, Japan(1)
1996 Proceedings 46th Electronic Components and Technology Conference(1)
2008 58th Electronic Components and Technology Conference(1)
2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers(1)
2009 Asia Pacific Microwave Conference(1)
40th Conference Proceedings on Electronic Components and Technology(1)
IEEE(8)
Media(1)
Denver, CO, USA(1)
Lake Buena Vista, FL, USA(1)
Las Vegas, NV, USA(1)
Nara, Japan(1)
Orlando, FL, USA(1)
Heterogeneous Integration(4)
Thin Films(4)
Actuator(3)
Linewidth(3)
Thin-film Technology(3)

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Results

Millimeter-wave MEMS capacitive switch in vacuum-sealed in-line wafer level package

Takashi Yamamoto;Takahiro Sogo;Susumu Obata;Takeshi Miyagi;Shigeru Hiura

2009 Asia Pacific Microwave Conference

Year: 2009 | Conference Paper |

Cited by: Papers (1)

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In this paper, we present a millimeter-wave microelectromechanical systems (MEMS) switch with a microsecond switching time. The optimization of the mechanical structure, application of high actuation voltages and encapsulation with a vacuum-sealed package result in a higher speed with which a beam of the MEMS switch is pulled in and pulled out. In order to reduce the packaging cost, we encapsulate...Show More

Millimeter-wave MEMS capacitive switch in vacuum-sealed in-line wafer level package

Takashi Yamamoto;Takahiro Sogo;Susumu Obata;Takeshi Miyagi;Shigeru Hiura

2009 Asia Pacific Microwave Conference

Year: 2009 | Conference Paper |

Highly reliable and manufacturable in-line wafer-level hermetic packages for RF MEMS variable capacitor

Akihiro Kojima;Yoshiaki Shimooka;Yoshiaki Sugizaki;Mitsuyoshi Endo;Hiroaki Yamazaki;Etsuji Ogawa;Tamio Ikehashi;Tatsuya Ohguro;Susumu Obata;Takeshi Miyagi;Ikuo Mori;Yoshiaki Toyoshima;Hideki Shibata

TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference

Year: 2009 | Conference Paper |

Cited by: Papers (6)

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In this paper, we report a thin-film encapsulation technology for wafer-level microelectromechanical systems (MEMS) variable capacitor package. The electrical characteristics of MEMS are adversely affected by moisture. In order to prevent moisture from permeating into a package, the top surface was protected with a plasma-enhanced chemical vapor deposition (PE-CVD) SiN layer. The developed package...Show More

Highly reliable and manufacturable in-line wafer-level hermetic packages for RF MEMS variable capacitor

Akihiro Kojima;Yoshiaki Shimooka;Yoshiaki Sugizaki;Mitsuyoshi Endo;Hiroaki Yamazaki;Etsuji Ogawa;Tamio Ikehashi;Tatsuya Ohguro;Susumu Obata;Takeshi Miyagi;Ikuo Mori;Yoshiaki Toyoshima;Hideki Shibata

TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference

Year: 2009 | Conference Paper |

An RF MEMS Variable Capacitor with Intelligent Bipolar Actuation

Tamio Ikehashi;Takayuki Miyazaki;Hiroaki Yamazaki;Atsushi Suzuki;Etsuji Ogawa;Shinji Miyano;Tomohiro Saito;Tatsuya Ohguro;Takeshi Miyagi;Yoshiaki Sugizaki;Nobuaki Otsuka;Hideki Shibata;Yoshiaki Toyoshima

2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers

Year: 2008 | Conference Paper |

Cited by: Papers (18) | Patents (2)

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We propose an IBA scheme based on a pull-out detection, which is suitable for implementing in a circuit. The scheme is implemented in a driver IC that is part of a module with an RF MEMS variable capacitor. No failures are observed over 108 cycles at 85degC, which is an accelerated charging condition.Show More

An RF MEMS Variable Capacitor with Intelligent Bipolar Actuation

Tamio Ikehashi;Takayuki Miyazaki;Hiroaki Yamazaki;Atsushi Suzuki;Etsuji Ogawa;Shinji Miyano;Tomohiro Saito;Tatsuya Ohguro;Takeshi Miyagi;Yoshiaki Sugizaki;Nobuaki Otsuka;Hideki Shibata;Yoshiaki Toyoshima

2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers

Year: 2008 | Conference Paper |

Robust hermetic wafer level thin-film encapsulation technology for stacked MEMS / IC package

Y. Shimooka;M. Inoue;M. Endo;S. Obata;A. Kojima;T. Miyagi;Y. Sugizaki;I. Mori;H. Shibata

2008 58th Electronic Components and Technology Conference

Year: 2008 | Conference Paper |

Cited by: Papers (15) | Patents (3)

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This paper reports a thin-film encapsulation technology for wafer level micro-electro-mechanical systems (MEMS) package, using poly-benzo-oxazole (PBO) sacrificial material and plasma enhanced chemical vapor deposited silicon oxide (PECVD SiO) cap layer. This technique, which is applicable for MEMS technologies, saves die size and enables conventional package processes such as dicing, picking, mou...Show More

Robust hermetic wafer level thin-film encapsulation technology for stacked MEMS / IC package

Y. Shimooka;M. Inoue;M. Endo;S. Obata;A. Kojima;T. Miyagi;Y. Sugizaki;I. Mori;H. Shibata

2008 58th Electronic Components and Technology Conference

Year: 2008 | Conference Paper |

MCM-D/L using copper/photosensitive-BCB multilayer for upper microwave band systems

T. Miyagi;Y. Iseki;K. Higuchi;Y. Shizuki;T. Hanawa;E. Takagi;M. Saito;K. Yoshihara;M. Konno

1996 Proceedings 46th Electronic Components and Technology Conference

Year: 1996 | Conference Paper |

Cited by: Papers (6) | Patents (2)

This paper describes an MCM-D/L technology for upper microwave band systems. The substrate of this MCM is constructed of copper/photosensitive-benzocyclobutene (P-BCB) multilayer formatted onto a print wiring board (PWB). Features of the developed MCM are (1) a novel microstrip structure for improvement of high-frequency characteristics and (2) a low-cost simple copper/P-BCB process using polishin...Show More

MCM-D/L using copper/photosensitive-BCB multilayer for upper microwave band systems

T. Miyagi;Y. Iseki;K. Higuchi;Y. Shizuki;T. Hanawa;E. Takagi;M. Saito;K. Yoshihara;M. Konno

1996 Proceedings 46th Electronic Components and Technology Conference

Year: 1996 | Conference Paper |

GaAs multichip module for a parallel processing system

T. Miyagi;K. Itoh;S. Kimijima;T. Sudo

IEEE Transactions on Components, Hybrids, and Manufacturing Technology

Year: 1990 | Volume: 13, Issue: 4 | Journal Article |

Cited by: Papers (1)

The module described is a high-speed data transfer network for a parallel processing system. The high-speed data transfer network connecting multiple processor units was realized in a module using 8-bit slice GaAs bus logic (BL) LSIs which operate at 100 MHz. The GaAs multichip module consists of 12 GaAs BL LSIs in a 3*4 matrix. Each GaAs chip is sealed in a chip carrier with bumps. The chip carri...

First Page of the Article

GaAs multichip module for a parallel processing system

T. Miyagi;K. Itoh;S. Kimijima;T. Sudo

IEEE Transactions on Components, Hybrids, and Manufacturing Technology

Year: 1990 | Volume: 13, Issue: 4 | Journal Article |

GaAs multichip module for a parallel processing system

T. Miyagi;K. Itoh;S. Kimijima;T. Sudo

40th Conference Proceedings on Electronic Components and Technology

Year: 1990 | Conference Paper |

Cited by: Papers (1) | Patents (2)

A high-speed data transfer network for a parallel processing system has been developed on the basis of multichip packaging technology. The high-speed data transfer network connecting multiple processor units (PUs) has been achieved in a module using 8 bit-slice GaAs bus logic (BL) LSIs operating at 100 MHz. The GaAs multichip module consists of 12 GaAs BL LSIs in a 3*4 matrix. Each GaAs chip is se...Show More

GaAs multichip module for a parallel processing system

T. Miyagi;K. Itoh;S. Kimijima;T. Sudo

40th Conference Proceedings on Electronic Components and Technology

Year: 1990 | Conference Paper |

Electrical properties of a multilayer thin film substrate for multichip packages

O. Shimada;K. Ito;T. Miyagi;S. Kimijima;T. Sudo

Proceedings. Japan IEMT Symposium, Sixth IEEE/CHMT International Electronic Manufacturing Technology Symposium

Year: 1989 | Conference Paper |

Cited by: Papers (17)

The authors report the electrical properties of multilayer thin-film interconnects examined under circumstances in which the signal lines were sandwiched between mesh-pattern metal layers (called meshed stripline). Multilayer thin-film substrates with various transmission line structures were manufactured with several mesh patterns (power/ground planes) and signal lines, and the characteristic imp...Show More

Electrical properties of a multilayer thin film substrate for multichip packages

O. Shimada;K. Ito;T. Miyagi;S. Kimijima;T. Sudo

Proceedings. Japan IEMT Symposium, Sixth IEEE/CHMT International Electronic Manufacturing Technology Symposium

Year: 1989 | Conference Paper |

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