Loading [MathJax]/extensions/MathMenu.js
Yoshiaki Sugizaki - IEEE Xplore Author Profile

Showing 1-19 of 19 results

Filter Results

Show

Results

Graphene FETs immobilized with some anions show extremely large modulation of the Fermi level upon light irradiation. The mechanism of the modulation is suggested to be the charge transfer between graphene and the anion, which makes photogating effect resulting from capacitive coupling of electrons or holes injection in the anion. We also found that the photo-response could be utilized as a chemic...Show More
In this paper, we report the demonstration of odorant capture and detection with a high-sensitivity olfactory system having a membrane-type odorant capture module. We carried out the odorant capture experiment with limonene and skatole gases as representative odorants, and the captured concentration was 7.6 nM and 0.2 µM, respectively. Furthermore, we have demonstrated 10 nM sensitivity by the gra...Show More
Ionic liquids, known as non-volatile solvents, have potential for realizing microanalysis with a minute quantity of sample. Here, in this paper, we report the measurement of the Id-Vg characteristics during the enzymatic catalytic reactions and streptavidin-biotin binding in ionic liquids by using the graphene FET sensors we fabricated, and successfully-monitored the biological reactions in much s...Show More
We propose a new Cu/SiO hybrid bonding process using ultrathin Mn film at the bonding interface. In this process, bonding stability is improved because the bonding interface consists of only Mn. In addition, Mn on SiO forms a MnSiO, which is known as a diffusion barrier for Cu during thermal processing, resulting in improved reliability of interconnects in areas of misalignment. To demonstrate the...Show More
We propose a novel Si photonics module that overcomes the issues of conventional Si photonics modules such as package structure and electrical connection. The module incorporates an optical fiber socket fabricated by blind via socket (BVS) technology, which implements backside optical I/O in a photonic IC (PIC) by forming blind via holes on the backside. High-speed high-density electrical connecti...Show More
To compare Si and poly-SiGe as MEMS structural materials having 20 pm-thick, we fabricated a capacitive accelerometer on an 8-inch Si substrate using CMOS standard process and measured capacitance sensitivities of an identical sensor design. As a result, we found that the sensitivity of the SiGe sensor is 2.1 times larger than that of the Si sensor. We also confirmed that the SiGe sensor can attai...Show More
This paper presents a novel encapsulation resin that can relieve the impact of electrostatic discharge (ESD) on electronic devices. The encapsulation resin employs ZnO-based ceramic varistor particles instead of SiO2 fillers. It shows a typical voltage-dependent resistance (VDR) property, i.e., steep resistance drop with the rise of applied voltage. To adopt the resin (hereinafter referred to as t...Show More
We present a practical method to evaluate gas permeability for thin polymer films using an encapsulated micro-electro-mechanical-system (MEMS) oscillator. Previously, we have developed a hermetic thin-film dome structure for RF-MEMS tunable capacitor, using conventional back-end-of-the-line (BEOL) processes. The dome is made of multiple layers including a polymer film, whose gas permeability is an...Show More
Refering to the increasing demand for extended transmission distances of high-definition video in consumer electronics we present a composite optoelectronic high-definition multimedia interface (HDMI) cable that replaces the four electrical transition-minimized differential signal video channels by a 4×3.4 Gb/s optical fiber link, the currently maximum specified bit rate. This improves the signal ...Show More
Reduction of cost has become the most important challenge for solid state lighting. We proposed a novel Wafer-Level LED Packaging (WL2P) technology, which enables both extremely low cost and small size for future solid state lighting. Where a conventional package needs individual assembly steps, resulting in high fabrication cost, we carried out from growth of the GaN layer, over formation of Inte...Show More
An optoelectronic interconnection module for mobile devices is required to have not only optical interconnection for high-speed and noise-free signal transmission but also many electrical wirings for multiple power supplies and low-speed signal transmission. It leads to great challenges of cost increase, flexibility degradation and electromagnetic noise emission. We propose a novel optoelectronic ...Show More
This paper reports on 1-chip RF-MEMS tunable capacitor that equips CMOS driver circuit in the underlying layer. A Wafer Level Chip Scale Package (WLCSP) optimized for RF-MEMS is employed to minimize the module size. The MEMS actuation voltage is generated by an Actuation Voltage Generator (AVG). The boost mechanism employed in the AVG enables instant high voltage generation and reduction of the di...Show More
We introduce an extremely thin 50/125 perfluorinated graded-index plastic optical fiber (POF) and its application in a 4×10 Gb/s optical link including our optical sub-assembly (OSA). We outline the main characteristics of the POF before the introduction of the fibers to our already established OSA is explained. Particularly low attenuation with error-free transmission down to a bending radius of ...Show More
Actuators used in RF-MEMS tunable capacitors have an issue of creep-induced deformation. The creep is caused by a ductile-metal beam which is indispensable to attain the low loss. To avoid this issue, we previously reported an actuator structure that uses a brittle material, silicon nitride (SiN), at the stress-concentrated spring portions [1]. The present paper aims to clarify a long-term creep i...Show More
This paper presents an RF MEMS tunable capacitor that achieves an excellent power-handling property with relatively low actuation voltage. The tunable capacitor consists of two fixed MIM (Metal-Insulator-Metal) capacitors and two MEMS capacitor elements, all connected in series. This quadruple series capacitor (QSC) structure enables reduction of the actuation voltage without sacrificing the power...Show More
In this paper, we report a thin-film encapsulation technology for wafer-level microelectromechanical systems (MEMS) variable capacitor package. The electrical characteristics of MEMS are adversely affected by moisture. In order to prevent moisture from permeating into a package, the top surface was protected with a plasma-enhanced chemical vapor deposition (PE-CVD) SiN layer. The developed package...Show More
This paper reports a thin-film encapsulation technology for wafer level micro-electro-mechanical systems (MEMS) package, using poly-benzo-oxazole (PBO) sacrificial material and plasma enhanced chemical vapor deposited silicon oxide (PECVD SiO) cap layer. This technique, which is applicable for MEMS technologies, saves die size and enables conventional package processes such as dicing, picking, mou...Show More