Abstract:
This paper describes an MCM-D/L technology for upper microwave band systems. The substrate of this MCM is constructed of copper/photosensitive-benzocyclobutene (P-BCB) mu...Show MoreMetadata
Abstract:
This paper describes an MCM-D/L technology for upper microwave band systems. The substrate of this MCM is constructed of copper/photosensitive-benzocyclobutene (P-BCB) multilayer formatted onto a print wiring board (PWB). Features of the developed MCM are (1) a novel microstrip structure for improvement of high-frequency characteristics and (2) a low-cost simple copper/P-BCB process using polishing technology. As BCB has good thermal and electric characteristics compared with polyimide or epoxy, BCB is expected to be applied to high frequency systems. We have developed a low-cost copper/P-BCB multilayer process with a new microstrip structure, and measured the high-frequency characteristics (10 GHz/spl sim/40 GHz). In the process technology, we took note of the adhesion of the metal film/BCB interface. As a result of a study of the adhesive metal and chemical/thermal treatment before and after fabrication of the film, we found that the necessary adhesion force was obtained by N/sub 2/ plasma treatment of the BCB surface before metal evaporation and annealing (250/spl deg/C:BCB cure temperature) after evaporation. Also, Cr was found to be the best material for adhesion. The high-frequency characteristics (10 GHz/spl sim/40 GHz) were estimated by a ring resonator and microstrip transmission line of copper/P-BCB multilayer fabricated on a PWB. Also, the S-parameters showed good characteristics. The developed MCM-D/L substrate has been proved to be suitable for high-frequency systems.
Date of Conference: 28-31 May 1996
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-3286-5
Print ISSN: 0569-5503
Citations are not available for this document.
Cites in Patents (2)Patent Links Provided by 1790 Analytics
1.
Cheung, Robin W.; Ting, Chiu H., "METALLIZED INTERCONNECTION STRUCTURE"
Inventors:
Cheung, Robin W.; Ting, Chiu H.
Abstract:
A dual damascene method of fabricating an interconnection level of conductive lines and connecting vias etches a via opening in a first insulating layer. A photoresist layer that the defines the conductive wiring is deposited and patterned on the first insulating layer after the via opening has been created. The via opening and the conductive wire opening in the resist layer are then filled with the conductive material, such as copper. The resist layer may then be removed and a second insulating layer provided over the first insulating layer.
Assignee:
ADVANCED MICRO DEVICES INC
Filing Date:
08 November 2000
Grant Date:
10 December 2002
Patent Classes:
Current U.S. Class:
257700000, 257750000, 257E21586, 257E21589
Current International Class:
H01L0231200000
2.
Cheung, Robin W.; Ting, Chiu H., "METALLIZED INTERCONNECTION STRUCTURE AND METHOD OF MAKING THE SAME"
Inventors:
Cheung, Robin W.; Ting, Chiu H.
Abstract:
A dual damascene method of fabricating an interconnection level of conductive lines and connecting vias etches a via opening in a first insulating layer. A photoresist layer that the defines the conductive wiring is deposited and patterned on the first insulating layer after the via opening has been created. The via opening and the conductive wire opening in the resist layer are then filled with the conductive material, such as copper. The resist layer may then be removed and a second insulating layer provided over the first insulating layer.
Assignee:
ADVANCED MICRO DEVICES INC
Filing Date:
04 June 1998
Grant Date:
28 November 2000
Patent Classes:
Current U.S. Class:
438687000, 257E21586, 257E21589, 438623000, 438624000, 438637000, 438653000
Current International Class:
H01L0214400000
