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Andrei S. Salnikov

Also published under: A. S. Salnikov, Andrei Salnikov, Andrey S. Salnikov

Publications
29
Citations
43
Publications by Year
20102024
Co-Authors:
Show All Co-Authors (33)
Image of author Andrei S. Salnikov

Andrei S. Salnikov

Also published under: A. S. Salnikov, Andrei Salnikov, Andrey S. Salnikov

Affiliation

50ohm Lab
Tomsk State University of Control Systems and Radioelectronics
Tomsk, Russia

Publication Topics

Biography

Andrei S. Salnikov, Ph.D. (2013), Senior Research Officer of TUSUR University. Research interests: modeling and PDK development for MMICs, statistical analysis of microwave circuits, passive on-chip element design.(Based on document published on 5 January 2017).
Publications
29
Citations
43
Publications by Year
20102024
Co-Authors:
Show All Co-Authors (33)
Author's Published Works

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An Approach to Double-Balanced Mixer Synthesis Using Surrogate Modeling and Genetic Algorithm

Vladislav I. Stepanov;Aleksandr A. Metel;Andrei S. Salnikov;Dmitry V. Bilevich;Alexey A. Kalentyev

2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM)
Year: 2024 | Conference Paper |
In this paper, we propose an approach to double-balanced mixer synthesis. Distinctive features of the approach are using genetic algorithm to search the solution and surrogate modeling to speed-up the circuit simulation. The synthesis is carried out according to a set of requirements for conversion gain, port-to-port isolation, and LO and RF return loss. The synthesized mixer is configured as a do...Show More

An Approach to Double-Balanced Mixer Synthesis Using Surrogate Modeling and Genetic Algorithm

Vladislav I. Stepanov;Aleksandr A. Metel;Andrei S. Salnikov;Dmitry V. Bilevich;Alexey A. Kalentyev

Year: 2024 | Conference Paper |

Using Genetic Algorithm and Simulated Annealing with Memory to Solve Layout Synthesis Problem for GaAs MMIC

Dmitry V. Bilevich;Andrei S. Salnikov;Igor M. Dobush;Aleksandr A. Metel;Aleksandr E. Goryainov;Aleksey A. Kalentyev

2023 IEEE 24th International Conference of Young Professionals in Electron Devices and Materials (EDM)
Year: 2023 | Conference Paper |
A GaAs microwave monolithic integrated circuit (MMIC) layout synthesis technique is presented. Evolutionary algorithms and simulated annealing-like algorithms are used in the suggested technique. A graph is used to represent circuit elements. Using genetic algorithm allow us to get global placement. Using first guess (pattern) allow us to reduce population size by 5 times, which lead to reduce syn...Show More

Using Genetic Algorithm and Simulated Annealing with Memory to Solve Layout Synthesis Problem for GaAs MMIC

Dmitry V. Bilevich;Andrei S. Salnikov;Igor M. Dobush;Aleksandr A. Metel;Aleksandr E. Goryainov;Aleksey A. Kalentyev

Year: 2023 | Conference Paper |

Inductor Synthesis Technique Based on Surrogate Modeling

Vladislav I. Stepanov;Aleksandr A. Metel;Andrei S. Salnikov;Dmitry V. Bilevich

2023 IEEE Ural-Siberian Conference on Biomedical Engineering, Radioelectronics and Information Technology (USBEREIT)
Year: 2023 | Conference Paper |
Cited by: Papers (2)
Development results of the inductor synthesis technique are presented. User may set requirements to inductance and self-resonance frequency. Output space mapping and kriging interpolation are used to get surrogate model in presented technique. Combination of these methods allow us to predict main inductor characteristics in specified range of the geometry parameters. A suggested technique workflow...Show More

Inductor Synthesis Technique Based on Surrogate Modeling

Vladislav I. Stepanov;Aleksandr A. Metel;Andrei S. Salnikov;Dmitry V. Bilevich

Year: 2023 | Conference Paper |

The Experimental Circuits of D-Mode GaAs pHEMT Serial-to-Parallel Converter Blocks

Dmitry V. Bilevich;Andrei S. Salnikov;Igor M. Dobush

2022 International Siberian Conference on Control and Communications (SIBCON)
Year: 2022 | Conference Paper |
An active electronically scanned array is now in widespread commercial use, e.g., in 5G massive MIMO, or automotive radar. Each antenna in an array has its transmit-receive module (TRM). A control system is in charge of the amplitude and phase of each TRM. To simplify the control system, TRM may have an onboard logic circuit. Such a solution may reduce the overall system dimensions even for the Ga...Show More

The Experimental Circuits of D-Mode GaAs pHEMT Serial-to-Parallel Converter Blocks

Dmitry V. Bilevich;Andrei S. Salnikov;Igor M. Dobush

Year: 2022 | Conference Paper |

A Golden Device Selection Algorithm for Microwave Monolithic Integrated Circuit Elements Modeling

Andrei Salnikov;Dmitry Bilevich;Artem Popov;Igor Dobush;Alexey Kalentyev;Aleksandr Goryainov

2022 Moscow Workshop on Electronic and Networking Technologies (MWENT)
Year: 2022 | Conference Paper |
A golden device selection is a necessary step of model extraction for microwave monolithic integrated circuit (MMIC) elements. A golden device, or golden die, is an element sample on a wafer that represents the centerline process technology. The existing golden device selection algorithms consider several independent DC or AC parameters expressed as real values. But for MMIC elements the microwave...Show More

A Golden Device Selection Algorithm for Microwave Monolithic Integrated Circuit Elements Modeling

Andrei Salnikov;Dmitry Bilevich;Artem Popov;Igor Dobush;Alexey Kalentyev;Aleksandr Goryainov

Year: 2022 | Conference Paper |

A Comparison of The Different Gaas Phemt Logic Families Characteristics

D. V. Bilevich;A. S. Salnikov;A. A. Popov;A. A. Kalentyev;A. E. Goryainov

2021 Dynamics of Systems, Mechanisms and Machines (Dynamics)
Year: 2021 | Conference Paper |
Cited by: Papers (1)
A comparison of the GaAs pHEMT logic families characteristics is presented. Six logic families were compared. A comparison showed that the use of high value resistors allows reducing the occupied area by 1.6 times and the power consumption by 5 times of the NOT gate for DCFL circuits. It was found that the use of such resistors in the BFL circuits allows to reducing the occupied area by 2 times an...Show More

A Comparison of The Different Gaas Phemt Logic Families Characteristics

D. V. Bilevich;A. S. Salnikov;A. A. Popov;A. A. Kalentyev;A. E. Goryainov

Year: 2021 | Conference Paper |

Effect of Different De-Embedding Techniques on Small-Signal Parameters of X-Band Low-Noise Amplifier

Artem A. Popov;Igor M. Dobush;Aleksandr A. Metel;Dmitry V. Bilevich;Aleksandr E. Goryainov;Alexey A. Kalentyev;Andrei S. Salnikov;Ivan S. Vasil'evskii

2021 International Siberian Conference on Control and Communications (SIBCON)
Year: 2021 | Conference Paper |
In most cases researchers consider existing de-embedding techniques in terms of characterization accuracy of the monolithic microwave integrated circuit component where an emphasis is put on the upper limit of the frequency range. In real practice, when faced with a choice of the de-embedding technique, one must take into account a number of additional factors, such as target application field of ...Show More

Effect of Different De-Embedding Techniques on Small-Signal Parameters of X-Band Low-Noise Amplifier

Artem A. Popov;Igor M. Dobush;Aleksandr A. Metel;Dmitry V. Bilevich;Aleksandr E. Goryainov;Alexey A. Kalentyev;Andrei S. Salnikov;Ivan S. Vasil'evskii

Year: 2021 | Conference Paper |

A Study of Connectors and Feed Lines De-Embedding Techniques for PCB Microwave Components S-Parameters Measurements Up To 50 Ghz

A. S. Salnikov;I. M. Dobush;D. V. Bilevich;A. A. Popov;A. A. Kalentyev;A. E. Goryainov

2020 Dynamics of Systems, Mechanisms and Machines (Dynamics)
Year: 2020 | Conference Paper |
Cited by: Papers (2)
Connectors and lines de-embedding techniques for PCB microwave components S-parameters measurements up to 50 are considered. Comparison between widely used Multiline Thru-Reflect-Line (MTRL) method and promising 2xThru method are presented. This paper has demonstrated that both methods give same results, however, 2xThru method requires just one measured structure as opposite MTRL, where six measur...Show More

A Study of Connectors and Feed Lines De-Embedding Techniques for PCB Microwave Components S-Parameters Measurements Up To 50 Ghz

A. S. Salnikov;I. M. Dobush;D. V. Bilevich;A. A. Popov;A. A. Kalentyev;A. E. Goryainov

Year: 2020 | Conference Paper |

A Study on the Effect of Ion Implantation Process Variations on the Small-Signal MESFET Model Parameters

Artem A. Popov;Dmitry V. Bilevich;Andrei S. Salnikov;Aleksandr E. Goryainov;Igor M. Dobush;Alexey A. Kalentyev

2019 International Multi-Conference on Engineering, Computer and Information Sciences (SIBIRCON)
Year: 2019 | Conference Paper |
With increasing complexity of manufacturing technology and semiconductor devices it becomes extremely important to make a connection between process parameters and characteristics of integrated components. Over the past 10 years, a lot of research has been done on a novel approach to the semiconductor manufacturing process control called virtual metrology. Virtual metrology allows to estimate the ...Show More

A Study on the Effect of Ion Implantation Process Variations on the Small-Signal MESFET Model Parameters

Artem A. Popov;Dmitry V. Bilevich;Andrei S. Salnikov;Aleksandr E. Goryainov;Igor M. Dobush;Alexey A. Kalentyev

Year: 2019 | Conference Paper |

A Comparative Study on the Parasitic Parameter Extraction Techniques for the Small-Signal Microwave Phemt Modeling

A. A. Popov;D. V. Bilevich;A. S. Salnikov;I. M. Dobush;A. A. Metel;A. A Kalentyev;A. E. Goryainov

2019 Dynamics of Systems, Mechanisms and Machines (Dynamics)
Year: 2019 | Conference Paper |
In this paper we overview the common parasitic extraction techniques that have been widely applied for the small-signal GaAs pHEMT modeling. Using the reviewed techniques and their combinations several small signal models have been built and compared in terms of accuracy. For the small-signal modeling we used the measured S-parameters of the 0.25 um GaAs pHEMT with a 6x50 um total gate width. The ...Show More

A Comparative Study on the Parasitic Parameter Extraction Techniques for the Small-Signal Microwave Phemt Modeling

A. A. Popov;D. V. Bilevich;A. S. Salnikov;I. M. Dobush;A. A. Metel;A. A Kalentyev;A. E. Goryainov

Year: 2019 | Conference Paper |

Verification of an Automatic GaAs HEMT Nonlinear Modeling Technique

Artem A. Popov;Dmitry V. Bilevich;Andrei S. Salnikov;Igor M. Dobush;Alexey A. Kalentyev;Aleksandr E. Goryainov

2019 International Siberian Conference on Control and Communications (SIBCON)
Year: 2019 | Conference Paper |
Compact large-signal modeling of nonlinear MMIC devices is a one of the most essential topics for the microwave community. Many different nonlinear modeling techniques have been suggested in the last years and a significant progress has been made in measurement tools. However, as the number of measured points increases, traditional verification approaches based on simple comparison between measure...Show More

Verification of an Automatic GaAs HEMT Nonlinear Modeling Technique

Artem A. Popov;Dmitry V. Bilevich;Andrei S. Salnikov;Igor M. Dobush;Alexey A. Kalentyev;Aleksandr E. Goryainov

Year: 2019 | Conference Paper |

Automatic Nonlinear Modeling Technique for Gaas HEMT

D. V. Bilevich;A. A. Popov;A. S. Salnikov;I. M. Dobush;A. S. Goryainov;A. A Kalentyev;D. V. Garays

2018 Dynamics of Systems, Mechanisms and Machines (Dynamics)
Year: 2018 | Conference Paper |
Cited by: Papers (1)
A new technique for nonlinear transistor modeling is suggested. The technique includes an analytical extraction and a multistage optimization, providing fully automated modeling. An extraction algorithm for the parameters of an internal voltage-controlled current source Ids is shown. A fully automated workflow of small-signal model extraction is presented. An approach for obtaining parameters of n...Show More

Automatic Nonlinear Modeling Technique for Gaas HEMT

D. V. Bilevich;A. A. Popov;A. S. Salnikov;I. M. Dobush;A. S. Goryainov;A. A Kalentyev;D. V. Garays

Year: 2018 | Conference Paper |

Plasma-Chemical Etching Process Behavioral Models Based on Tree Ensembles and Neural Network

Artyom A. Popov;Dmitry V. Bilevich;Andrei S. Salnikov;Alexey A. Kalentyev;Dmitry V. Garays

2018 XIV International Scientific-Technical Conference on Actual Problems of Electronics Instrument Engineering (APEIE)
Year: 2018 | Conference Paper |
Cited by: Papers (2)
In the modern semiconductor manufacturing technology it is essential to control the result of a wafer processing to ensure stability and high production yield. One of the promising techniques, which can provide the information about the result of a process, is predictive modeling based on machine learning models. In this paper, the possibilities of using Tree Ensembles and Artificial Neural Networ...Show More

Plasma-Chemical Etching Process Behavioral Models Based on Tree Ensembles and Neural Network

Artyom A. Popov;Dmitry V. Bilevich;Andrei S. Salnikov;Alexey A. Kalentyev;Dmitry V. Garays

Year: 2018 | Conference Paper |

Broadband double-balanced SiGe BiCMOS mixer with integrated asymmetric baluns

A. A. Kokolov;A. S. Salnikov;F. I. Sheyerman;L. I. Babak;M. L. Schevlyakov

2017 Dynamics of Systems, Mechanisms and Machines (Dynamics)
Year: 2017 | Conference Paper |
Cited by: Papers (4)
A MMIC passive double-balanced mixer (DBM) with on-chip integrated baluns based on 0.25 μm SiGe BiCMOS technology is presented. A mixer core of DBM has been designed using resistive-FET topology. The construction of integrated baluns is broadside-coupled and asymmetric. The measured performances of MMIC DBM over 1.5-4.5 GHz frequency band in a coaxial test bench are as follows: conversion gain Gc ...Show More

Broadband double-balanced SiGe BiCMOS mixer with integrated asymmetric baluns

A. A. Kokolov;A. S. Salnikov;F. I. Sheyerman;L. I. Babak;M. L. Schevlyakov

Year: 2017 | Conference Paper |

Broadband IP-blocks for L- and S-band receiver SoC based on 0.25 um SiGe technology

F.I. Sheyerman;I.M. Dobush;A.A. Kokolov;A.S. Salnikov;M.V. Cherkashin;L.I. Babak;M.L. Shevlyakov;Yu. A. Svetlichniy;E.V. Grigoriev;S. Yu. Uimanov

2017 Dynamics of Systems, Mechanisms and Machines (Dynamics)
Year: 2017 | Conference Paper |
Cited by: Papers (2)
A concept of universal broadband (1.5-4.5 GHz) receiver SoC is proposed. It makes the design and production of variety of digitally controlled receivers for different sub-bands of L- and S-bands more simple, fast and cheap. The design and measurements of broadband RF IP-blocks for the SoC based on 0.25 μm SiGe BiCMOS process are presented: digital step attenuator with serial/parallel control drive...Show More

Broadband IP-blocks for L- and S-band receiver SoC based on 0.25 um SiGe technology

F.I. Sheyerman;I.M. Dobush;A.A. Kokolov;A.S. Salnikov;M.V. Cherkashin;L.I. Babak;M.L. Shevlyakov;Yu. A. Svetlichniy;E.V. Grigoriev;S. Yu. Uimanov

Year: 2017 | Conference Paper |

Automated synthesis and measurement of broadband CMOS buffer amplifier 1–5 GHz

I. M. Dobush;A. A. Kalentyev;D. A. Zhabin;A. E. Goryainov;A. S. Salnikov;F. I. Sheyerman;D. V. Garays

2017 International Siberian Conference on Control and Communications (SIBCON)
Year: 2017 | Conference Paper |
Cited by: Papers (2)
The design and measurement results of broadband 1-5 GHz buffer amplifier (BA) MMIC based on CMOS transistors (0.25 um SiGe BiCMOS process) are presented. BA's topology was obtained by genetic-algorithm based software tool for structural-parametric synthesis Geneamp. The advantages of the developed amplifier for chosen fabrication process are: broadband frequency (overlap L-, S- and partially C-ban...Show More

Automated synthesis and measurement of broadband CMOS buffer amplifier 1–5 GHz

I. M. Dobush;A. A. Kalentyev;D. A. Zhabin;A. E. Goryainov;A. S. Salnikov;F. I. Sheyerman;D. V. Garays

Year: 2017 | Conference Paper |

Approach to scalable modeling for planar inductor using EM simulation and a few samples measurement

Andrei S. Salnikov;Aleksandr E. Goryainov;Igor M. Dobush;Alexey A. Kalentyev;Dmitriy V. Garays

2017 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization for RF, Microwave, and Terahertz Applications (NEMO)
Year: 2017 | Conference Paper |
Cited by: Papers (8)
A new approach to building of a spiral inductor scalable model is proposed. In this approach metal layer conductance was determined using S-parameters measurement results. The scalable equivalent circuit of spiral inductor was obtained automatically by means of developed techniques for equivalent circuit extraction and optimal polynomial degree algorithm for approximation. Proposed scalable model ...Show More

Approach to scalable modeling for planar inductor using EM simulation and a few samples measurement

Andrei S. Salnikov;Aleksandr E. Goryainov;Igor M. Dobush;Alexey A. Kalentyev;Dmitriy V. Garays

Year: 2017 | Conference Paper |

Integrated balun design for SiGe system-on-a-chip

A. S. Salnikov;A. A. Kokolov;F. I. Scheyerman;R. Yu. Musenov;I. M. Dobush;L. I. Babak

2016 Dynamics of Systems, Mechanisms and Machines (Dynamics)
Year: 2016 | Conference Paper |
The results of integrated baluns design are presented. The designed baluns are subjected to use in monolithic integrated circuits and system-on-a-chip fabricated by SiGe BiCMOS technology. The results of electromagnetic simulation shown that designed balun has a rather low insertion loss and good matching.Show More

Integrated balun design for SiGe system-on-a-chip

A. S. Salnikov;A. A. Kokolov;F. I. Scheyerman;R. Yu. Musenov;I. M. Dobush;L. I. Babak

Year: 2016 | Conference Paper |

Process variation estimation for passive ladder circuit by means of interval analysis

Andrei S. Salnikov

2016 13th International Scientific-Technical Conference on Actual Problems of Electronics Instrument Engineering (APEIE)
Year: 2016 | Conference Paper |
In this article a new technique of process variation estimation in electrical circuit is presented. Technique is based on interval analysis application for a ladder circuit. Using this particular class of electrical circuit high speed of calculation could be achieved which is important in optimization and automated synthesis. In the article general ability of the technique application for a resist...Show More

Process variation estimation for passive ladder circuit by means of interval analysis

Andrei S. Salnikov

Year: 2016 | Volume: 04 | Conference Paper |

Process variation estimation for passive ladder circuit by means of interval analysis

A.S. Salnikov

2016 13th International Scientific-Technical Conference on Actual Problems of Electronics Instrument Engineering (APEIE)
Year: 2016 | Conference Paper |
In this article a new technique of process variation estimation in electrical circuit is presented. Technique is based on interval analysis application for a ladder circuit. Using this particular class of electrical circuit high speed of calculation could be achieved which is important in optimization and automated synthesis. In the article general ability of the technique application for a resist...Show More

Process variation estimation for passive ladder circuit by means of interval analysis

A.S. Salnikov

Year: 2016 | Volume: 03 | Conference Paper |

Design and measurement of 0.1 – 4.5 GHz SiGe BiCMOS MMIC digital step attenuator

Igor M. Dobush;Feodor I. Sheyerman;Leonid I. Babak;Andrei S. Salnikov;Alexey A. Kalentyev;Dmitriy V. Garays;Aleksandr E. Goryainov;Roman K. Sobyanin

2016 13th International Scientific-Technical Conference on Actual Problems of Electronics Instrument Engineering (APEIE)
Year: 2016 | Conference Paper |
Cited by: Papers (9)
The design and measurement of 0.1 – 4.5 GHz 5-bit MMIC digital step attenuator (DSA) are presented. The MMIC DSA is fabricated with 0.25 um SiGe BiCMOS process and includes integrated driver providing serial/parallel control. The main features of MMIC DSA are as follows: wideband performances (it covers L-, S- and partially C-band); a good input and output return losses (less than 12 dB and 14 dB,...Show More

Design and measurement of 0.1 – 4.5 GHz SiGe BiCMOS MMIC digital step attenuator

Igor M. Dobush;Feodor I. Sheyerman;Leonid I. Babak;Andrei S. Salnikov;Alexey A. Kalentyev;Dmitriy V. Garays;Aleksandr E. Goryainov;Roman K. Sobyanin

Year: 2016 | Volume: 01 | Conference Paper |

A 1–4.5 GHz MMIC mixer based on SiGe BiCMOS technology

Andrey A. Kokolov;Andrey S. Salnikov;Feodor I. Scheyerman;Maxim L. Schevlyakov;Leonid I. Babak

2016 13th International Scientific-Technical Conference on Actual Problems of Electronics Instrument Engineering (APEIE)
Year: 2016 | Conference Paper |
A MMIC double-balanced passive mixer with on-chip integrated baluns based on 0.25 μm SiGe BiCMOS technology is presented. The mixer core configuration uses ring-connected CMOS transistors. The main MMIC mixer design steps are considered. The construction of integrated on-chip broadside balun is investigated. The MMIC mixer in the test bench with wire bonding has the following characteristics: conv...Show More

A 1–4.5 GHz MMIC mixer based on SiGe BiCMOS technology

Andrey A. Kokolov;Andrey S. Salnikov;Feodor I. Scheyerman;Maxim L. Schevlyakov;Leonid I. Babak

Year: 2016 | Volume: 01 | Conference Paper |

Anisotropy and frequency dependence determination of relative dielectric constant for sapphire and silicon carbide substrates

N. A. Torkhov;A. S. Salnikov;O. N. Minin;A. F. Kupreychik;L. I. Babak;V. G. Bozhkov

2014 24th International Crimean Conference Microwave & Telecommunication Technology
Year: 2014 | Conference Paper |
Cited by: Papers (1)
Study results of frequency properties of sapphire and 4H-SiC{0001} silicon carbide substrate show availability of anisotropy and dispersion of effective dielectric constant ε(f). In both cases a value of ε(f) decreases with frequency f increasing. For a sapphire substrate the dispersion (ε(f=3.3 GHz)=9.32 and ε(f=37.6GHz)=8.62) is 7.5 percent, anisotropy is lesser than 0.5 percent. For 4H-SiC subs...Show More

Anisotropy and frequency dependence determination of relative dielectric constant for sapphire and silicon carbide substrates

N. A. Torkhov;A. S. Salnikov;O. N. Minin;A. F. Kupreychik;L. I. Babak;V. G. Bozhkov

Year: 2014 | Conference Paper |

Dimension effect in a linear model of a Ka-band GaN HEMT

N. A. Torkhov;A. S. Salnikov;V. G. Bozhkov;L. I. Babak;I. M. Dobush;V. A. Novikov

2014 24th International Crimean Conference Microwave & Telecommunication Technology
Year: 2014 | Conference Paper |
Cited by: Papers (1)
It is shown that electrophysical property fractality (for example, ρ=ρ(l,d)) of a heteroepitaxial AlGaN/GaN structure with two-dimensional electron gas has a strong influence on field effect transistor linear model. In the present work influence of fractality on inner elements values of transistor equivalent circuit is described. It is necessary to take this influence into the account during desig...Show More

Dimension effect in a linear model of a Ka-band GaN HEMT

N. A. Torkhov;A. S. Salnikov;V. G. Bozhkov;L. I. Babak;I. M. Dobush;V. A. Novikov

Year: 2014 | Conference Paper |

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