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J. P. Roberts

Also published under: J. Roberts

Publications

Citations

Publications by Year

19952007

Co-Authors:

C. AdamsK. AlveyB. AndersonH. D. AndersonW. E. Anderson

Show All Co-Authors (131)

J. P. Roberts

Also published under: J. Roberts

Affiliation

MPA-CINT

Los Alamos National Laboratory

Los Alamos, NM, USA

Publication Topics

Electron Temperature,
Short Laser Pulses,
Acoustic Phonons,
Condensed Matter,
Delay In The Onset,
Experimental Techniques,
Heat Capacity,
Hexagonal,
Laser Pulse,
Linear Expansion Coefficient,
Negative Thermal Expansion,
Penetration Depth

Biography

J. Roberts, photograph and biography not available at the time of publication.(Based on document published on 19 February 2003).

Publications

Citations

Publications by Year

19952007

Co-Authors:

C. Adams
K. Alvey
B. Anderson
H. D. Anderson
W. E. Anderson

Show All Co-Authors (131)

Author's Published Works

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Showing 1-3 of 3 results

Journals (3)

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T.M. Liu(3)
W.G. Oldham(3)
Department of Electrical Engineering and Computer Sciences, Electronics Research Laboratory, University of California, Berkeley, CA, USA(2)
Department of Electrical Engineering and Computer Sciences, Electronic Research Laboratory, Berkeley, CA, USA(1)
IEEE Electron Device Letters(3)
IEEE(3)
Sheet Resistance(2)
Silicon Crystal(2)
Stopping Power(2)
Amorphous Surface(1)
Channel Power(1)

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Shallow boron junctions implanted in silicon through a surface oxide

T.M. Liu;W.G. Oldham

IEEE Electron Device Letters

Year: 1984 | Volume: 5, Issue: 8 | Journal Article |

Cited by: Papers (22)

The partial-ion-channeling tail in the atomic distribution profile of low-energy boron implants intoShow More

Shallow boron junctions implanted in silicon through a surface oxide

T.M. Liu;W.G. Oldham

IEEE Electron Device Letters

Year: 1984 | Volume: 5, Issue: 8 | Journal Article |

Channeling effect of low energy boron implant in

T.M. Liu;W.G. Oldham

IEEE Electron Device Letters

Year: 1983 | Volume: 4, Issue: 3 | Journal Article |

Cited by: Papers (100) | Patents (2)

Unintentional ion channeling in low energy ion implantation of boron intoShow More

Channeling effect of low energy boron implant in

T.M. Liu;W.G. Oldham

IEEE Electron Device Letters

Year: 1983 | Volume: 4, Issue: 3 | Journal Article |

Sheet resistance-junction depth relationships in implanted arsenic diffusion

T.M. Liu;W.G. Oldham

IEEE Electron Device Letters

Year: 1981 | Volume: 2, Issue: 10 | Journal Article |

Cited by: Papers (9)

A design graph for arsenic diffusion has been constructed based on a Chebyshev polynomial approximation of the arsenic implantation/diffusion profile. Systematic experiments of arsenic implantation/ diffusion were done to support the design graph. The ultimate limitations of arsenic shallow junction design are defined.Show More

Sheet resistance-junction depth relationships in implanted arsenic diffusion

T.M. Liu;W.G. Oldham

IEEE Electron Device Letters

Year: 1981 | Volume: 2, Issue: 10 | Journal Article |

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