Author details
![Image of author N. Wichmann](/mediastore/IEEE/content/freeimages/16/5580182/5551191/5551191-photo-2-source-small.gif)
N. Wichmann
Also published under: Nicolas Wichmann
Affiliation
Univ. Lille CNRS
Centrale Lille
Univ. Polytechnique Hauts-de France UMR 8520 IEMN - Institut d’Electronique de Microélectronique et de Nanotechnologie, Lille, France
Biography
Nicolas Wichmann was born in Valenciennes, France, on January 5, 1979. He received the Ph.D. degree from the Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), Université de Lille, Villeneuve d'Ascq, France, in 2005, for his work on the design, fabrication, and characterization of double-gate high electron mobility transistors (HEMTs) using InAlAs-InGaAs materials.,He is currently an Associate Professor with the IEMN and is involved in the realization and characterization of III-V compounds transistors, such as antimonide-based HEMTs and III-V metal–oxide–semiconductor field-effect transistors.(Based on document published on 19 August 2010). Author's Published Works