Sebastien Nuttinck - IEEE Xplore Author Profile

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Author details

Sebastien Nuttinck

Also published under: S. Nuttinck

Publications

37

Citations

636

Publications by Year

20002007

Co-Authors:

D. C. AhlgrenM. G. AllenB. BanerjeeM. BarskyJ. Bautista

Show All Co-Authors (73)

Sebastien Nuttinck

Also published under: S. Nuttinck

Affiliation

NXP Semiconductors, Heverlee, Belgium

Publication Topics

Metal Gate,
Gate Stack,
Carrier Mobility,
Charge Density,
Downscaling,
Gate Length,
Noise Figure,
Oscillation Frequency,
Quantum Confinement,
Silicide,
Transistor Performance,
Tuning Range

Biography

Sebastien Nuttinck received the Diploma of Advanced Studies, the Engineering Diploma, and the Ph.D. degree from the National Institute of Applied Sciences, Toulouse, France, in 1999, 1999, and 2003, respectively.,He performed his doctorate research work within the Microwave Application Group, Georgia Institute of Technology, Atlanta. During that time, he focused on the development of emerging technologies for high-performance communication systems. His works included the development of microwave characterization systems and the analysis, modeling, and applications of GaN, SOI, InP, SiGe, VCSEL, and 3D-MMIC technologies. He was with Philips Research for two years. He is currently with the Silicon Process Options Group, NXP Semiconductor, Hev...

Publications

37

Citations

636

Publications by Year

20002007

Co-Authors:

D. C. Ahlgren
M. G. Allen
B. Banerjee
M. Barsky
J. Bautista

Show All Co-Authors (73)

Author's Published Works

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Showing 1-25 of 37 results

Conferences (23)

Journals (13)

Magazines (1)

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S. Nuttinck(34)
J. Laskar(31)
E. Gebara(11)
M. Harris(8)
S. Pinel(7)
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA(6)
Yamacraw Design Center, Georgia Institute of Technology, Atlanta, GA, USA(6)
Georgia Electronic Design Center, School of ECE, Georgia Institute of Technology, Atlanta, GA, USA(5)
Yamacraw Design Center, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA(3)
TRW, Redondo Beach, CA, USA(2)
IEEE Transactions on Electron Devices(6)
2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278)(4)
IEEE Transactions on Microwave Theory and Techniques(4)
IEEE Microwave and Wireless Components Letters(3)
2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)(2)
IEEE(37)
Seattle, WA, USA(5)
Boston, MA, USA(2)
Fort Worth, TX, USA(2)
Munich, Germany(2)
Philadelphia, PA, USA(2)
Noise Figure(13)
Phase Noise(13)
Quality Factor(12)
Tuning Range(12)
Transconductance(9)

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Double-Gate finFETs as a CMOS Technology Downscaling Option: An RF Perspective

Sebastien Nuttinck;Bertrand Parvais;Gilberto Curatola;Abdelkarim Mercha

IEEE Transactions on Electron Devices

Year: 2007 | Volume: 54, Issue: 2 | Journal Article |

Cited by: Papers (68)

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Based on careful physical description, the effect of gate-length downscaling on the RF performance of double-gate fin field-effect transistors (finFETs) has been analyzed. Downscaling is beneficial to the device RF performance although the losses due to series parasitics increase. The source/drain series resistance in finFET largely limits the device RF performance, and the losses due to the gate ...Show More

Double-Gate finFETs as a CMOS Technology Downscaling Option: An RF Perspective

Sebastien Nuttinck;Bertrand Parvais;Gilberto Curatola;Abdelkarim Mercha

IEEE Transactions on Electron Devices

Year: 2007 | Volume: 54, Issue: 2 | Journal Article |

The Role of Volume Inversion on the Intrinsic RF Performance of Double-Gate FinFETs

Gilberto Curatola;Sebastien Nuttinck

IEEE Transactions on Electron Devices

Year: 2007 | Volume: 54, Issue: 1 | Journal Article |

Cited by: Papers (9)

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Quantum interactions between the inversion channels of multigate devices and their resulting effects on charge distribution and carrier mobility are analyzed in this paper. Results of this analysis are then used to assess the role of volume inversion on the intrinsic RF performance of double-gate FinFETs. Thin-fin devices are beneficial to low-operating and high-performance powers, and wideband RF...Show More

The Role of Volume Inversion on the Intrinsic RF Performance of Double-Gate FinFETs

Gilberto Curatola;Sebastien Nuttinck

IEEE Transactions on Electron Devices

Year: 2007 | Volume: 54, Issue: 1 | Journal Article |

Investigation of inductors for digital Si-CMOS technologies

R. Mukhopadhyay;S.W. Yoon;Y. Park;C.-H. Lee;S. Nuttinck;J. Laskar

2006 IEEE International Symposium on Circuits and Systems

Year: 2006 | Conference Paper |

Cited by: Papers (4)

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This paper investigates the performance of passive and active inductors for digital Si-CMOS technologies. The extreme low-resistivity of the Si-substrate and the absence of thick top metal layers in digital-CMOS processes prevent the implementation of high-Q passive inductors, and demand alternate solutions. A detailed comparison between the active and passive inductors based on several performanc...Show More

Investigation of inductors for digital Si-CMOS technologies

R. Mukhopadhyay;S.W. Yoon;Y. Park;C.-H. Lee;S. Nuttinck;J. Laskar

2006 IEEE International Symposium on Circuits and Systems

Year: 2006 | Conference Paper |

Ultrathin-body SOI devices as a CMOS technology downscaling option: RF perspective

IEEE Transactions on Electron Devices

Year: 2006 | Volume: 53, Issue: 5 | Journal Article |

Cited by: Papers (13)

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Based on a careful physical description, the RF performance of ultrathin-body (down to 3 nm) silicon-on-insulator transistors is investigated. While the mobility reduction in a thin Si film slightly degrades the peak cutoff frequency and the maximum frequency of high-performance cross-coupled pair-based RF oscillators, the changes in feedback capacitance improve the low operating power and high-pe...Show More

Ultrathin-body SOI devices as a CMOS technology downscaling option: RF perspective

IEEE Transactions on Electron Devices

Year: 2006 | Volume: 53, Issue: 5 | Journal Article |

Gate-stack analysis for 45-nm CMOS devices from an RF perspective

S. Nuttinck;G. Curatola;F. Widdershoven

IEEE Transactions on Electron Devices

Year: 2006 | Volume: 53, Issue: 4 | Journal Article |

Cited by: Papers (7)

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Three gate stacks for the 45-nm node are analyzed from an RF perspective. The authors present an expression of the gate resistance valid for all three stacks, quantify the differences each stack has on several small-signal RF figures-of-merit and on the RF noise parameters, and demonstrate that devices with fully silicided gates will enable ultralow-power/low-noise RF applications, while the perfo...Show More

Gate-stack analysis for 45-nm CMOS devices from an RF perspective

S. Nuttinck;G. Curatola;F. Widdershoven

IEEE Transactions on Electron Devices

Year: 2006 | Volume: 53, Issue: 4 | Journal Article |

Impact of downscaling and poly-gate depletion on the RF noise parameters of advanced nMOS transistors

S. Nuttinck;A.J. Scholten;L.F. Tiemeijer;F. Cubaynes;C. Dachs;C. Detcheverry;E.A. Hijzen

IEEE Transactions on Electron Devices

Year: 2006 | Volume: 53, Issue: 1 | Journal Article |

Cited by: Papers (4)

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For the first time, the effects of poly depletion on the RF noise performance of advanced CMOS transistors are reported and analyzed. Based on measurements and physical device simulations we quantify the increasing danger of poly gate depletion with downscaling on the RF noise parameters of CMOS devices. While poly depletion does not affect the minimum noise figure, it results in a degradation of ...Show More

Impact of downscaling and poly-gate depletion on the RF noise parameters of advanced nMOS transistors

S. Nuttinck;A.J. Scholten;L.F. Tiemeijer;F. Cubaynes;C. Dachs;C. Detcheverry;E.A. Hijzen

IEEE Transactions on Electron Devices

Year: 2006 | Volume: 53, Issue: 1 | Journal Article |

Active-inductor-based low-power broadband harmonic VCO in SiGe technology for wideband and multi-standard applications

R. Mukhopadhyay;Y. Park;S.W. Yoon;C.-H. Lee;S. Nuttinck;J.D. Cressler;J. Laskar

IEEE MTT-S International Microwave Symposium Digest, 2005.

Year: 2005 | Conference Paper |

Cited by: Papers (15)

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This paper presents the first reported description, analysis, and measured performance of a wideband harmonic generation technique that utilizes the non-linearity of a tunable active inductor (TAI) in SiGe technology. The technique demonstrates the highest reported measured fundamental tuning range of 3.5 GHz, for a TAI-VCO, from 1.7-5.2 GHz (100% tuning) while consuming only 3.7 mW from a 1.8 V s...Show More

Active-inductor-based low-power broadband harmonic VCO in SiGe technology for wideband and multi-standard applications

R. Mukhopadhyay;Y. Park;S.W. Yoon;C.-H. Lee;S. Nuttinck;J.D. Cressler;J. Laskar

IEEE MTT-S International Microwave Symposium Digest, 2005.

Year: 2005 | Conference Paper |

Cryogenic operation of third-generation, 200-GHz peak-f/sub T/, silicon-germanium heterojunction bipolar transistors

B. Banerjee;S. Venkataraman;Yuan Lu;Qingqing Liang;Chang-Ho Lee;S. Nuttinck;Dekhyuon Heo;Y.-J.E. Chen;J.D. Cressler;J. Laskar;G. Freeman;D.C. Ahlgren

IEEE Transactions on Electron Devices

Year: 2005 | Volume: 52, Issue: 4 | Journal Article |

Cited by: Papers (43)

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We present a comprehensive investigation of the cryogenic performance of third-generation silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technology. Measurements of the current-voltage (dc), small-signal ac, and broad-band noise characteristics of a 200-GHz SiGe HBT were made at 85 K, 120 K, 150 K, 200 K, and 300 K. These devices show excellent behavior down to 85 K, maintaining ...Show More

Cryogenic operation of third-generation, 200-GHz peak-f/sub T/, silicon-germanium heterojunction bipolar transistors

B. Banerjee;S. Venkataraman;Yuan Lu;Qingqing Liang;Chang-Ho Lee;S. Nuttinck;Dekhyuon Heo;Y.-J.E. Chen;J.D. Cressler;J. Laskar;G. Freeman;D.C. Ahlgren

IEEE Transactions on Electron Devices

Year: 2005 | Volume: 52, Issue: 4 | Journal Article |

Reconfigurable RFICs in Si-based technologies for a compact intelligent RF front-end

R. Mukhopadhyay;Yunseo Park;P. Sen;N. Srirattana;Jongsoo Lee;Chang-Ho Lee;S. Nuttinck;A. Joseph;J.D. Cressler;J. Laskar

IEEE Transactions on Microwave Theory and Techniques

Year: 2005 | Volume: 53, Issue: 1 | Journal Article |

Cited by: Papers (116) | Patents (1)

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This paper presents reconfigurable RF integrated circuits (ICs) for a compact implementation of an intelligent RF front-end for multiband and multistandard applications. Reconfigurability has been addressed at each level starting from the basic elements to the RF blocks and the overall front-end architecture. An active resistor tunable from 400 to 1600 /spl Omega/ up to 10 GHz has been designed an...Show More

Reconfigurable RFICs in Si-based technologies for a compact intelligent RF front-end

R. Mukhopadhyay;Yunseo Park;P. Sen;N. Srirattana;Jongsoo Lee;Chang-Ho Lee;S. Nuttinck;A. Joseph;J.D. Cressler;J. Laskar

IEEE Transactions on Microwave Theory and Techniques

Year: 2005 | Volume: 53, Issue: 1 | Journal Article |

Frequency-agile CMOS RFICs for multi-mode RF front-end

R. Mukhopadhyay;Y. Park;C.-H. Lee;S. Nuttinck;J. Laskar

7th European Conference on Wireless Technology, 2004.

Year: 2004 | Conference Paper |

Cited by: Papers (2)

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This paper presents new reconfigurable RFICs for multi-band applications. It includes a new fully tunable active inductor (TAI) and a frequency-agile VCO implemented using the proposed TAL The ICs have been implemented in 0.18μm CMOS technology. The novelty of the TA1 lies in the use of a tunable feedback resistor that results i n inductances tunable from O.lnH to 15nH with Q>50 for 0.5-3GHz. This...Show More

Frequency-agile CMOS RFICs for multi-mode RF front-end

R. Mukhopadhyay;Y. Park;C.-H. Lee;S. Nuttinck;J. Laskar

7th European Conference on Wireless Technology, 2004.

Year: 2004 | Conference Paper |

Achieving frequency-agile radio

R. Mukhopadhyay;Y. Park;J.S. Lee;S. Nuttinck;J.D. Cressler;J. Laskar

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

Year: 2004 | Conference Paper |

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This paper describes techniques to achieve high bandwidth systems for a frequency-agile radio. A bottom-up approach has been followed where the tunability and bandwidth of the basic building blocks are enhanced, and then these improved elements are introduced into higher-level blocks in order to achieve large bandwidths. The approach has been used to improve the tunability and bandwidth of an acti...Show More

Achieving frequency-agile radio

R. Mukhopadhyay;Y. Park;J.S. Lee;S. Nuttinck;J.D. Cressler;J. Laskar

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

Year: 2004 | Conference Paper |

Wide-band CMOS VCO and frequency divider design for quadrature signal generation

Y. Park;S. Chakraborty;C.-H. Lee;S. Nuttinck;J. Laskar

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)

Year: 2004 | Conference Paper |

Cited by: Papers (14)

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We present the design, implementation, and measurement of a fully integrated wide-band (3.3GHz-4GHz) CMOS VCOs and frequency divider, as well as the analysis and comparison of VCO topologies for their uniform phase noise performance in the wide tuning range. In addition, the dynamic range of the frequency divider is analyzed based on experimental results for the first time. The different VCO topol...Show More

Wide-band CMOS VCO and frequency divider design for quadrature signal generation

Y. Park;S. Chakraborty;C.-H. Lee;S. Nuttinck;J. Laskar

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)

Year: 2004 | Volume: 3 | Conference Paper |

Reconfigurable RFICs for frequency-agile VCOs in Si-based technology for multi-standard applications

R. Mukhopadhyay;Y. Park;P. Sen;N. Srirattana;J.S. Lee;S. Nuttinck;A.J. Joseph;J.D. Cressler;J. Laskar

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)

Year: 2004 | Conference Paper |

Cited by: Papers (11)

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This paper presents novel reconfigurable RFICs for intelligent radio applications. It includes a new fully tunable active inductor (TAI) along with frequency-agile VCOs. The ICs are implemented on both 0.18 /spl mu/m Si-CMOS and 0.18 /spl mu/m SiGe-BiCMOS technologies. The novelty of the TAI lies in the use of a tunable active feedback resistor that results in inductances tunable from 0.1 nH to 15...Show More

Reconfigurable RFICs for frequency-agile VCOs in Si-based technology for multi-standard applications

R. Mukhopadhyay;Y. Park;P. Sen;N. Srirattana;J.S. Lee;S. Nuttinck;A.J. Joseph;J.D. Cressler;J. Laskar

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)

Year: 2004 | Volume: 3 | Conference Paper |

Embedded IC and high-Q passives technology for ultra-compact Ku-band VCO module

S. Pinel;C.-H. Lee;S.-W. Yoon;S. Nuttinck;K. Lim;J. Laskar

IEEE Microwave and Wireless Components Letters

Year: 2004 | Volume: 14, Issue: 2 | Journal Article |

Cited by: Papers (8)

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We present a novel ultra-compact embedded IC integration approach for system-on-package (SOP) based solutions for RF and wireless communication applications. This concept is applied to the integration of a Ku band VCO module. The module fabrication is described and the impact of the packaging on the chip-set performances is discussed. The final thickness of the module is about 150 μm. The embedded...Show More

Embedded IC and high-Q passives technology for ultra-compact Ku-band VCO module

S. Pinel;C.-H. Lee;S.-W. Yoon;S. Nuttinck;K. Lim;J. Laskar

IEEE Microwave and Wireless Components Letters

Year: 2004 | Volume: 14, Issue: 2 | Journal Article |

A 1.8 GHz Fully Integrated Low Voltage LC VCO in Silicon on Sapphire CMOS

Rahul Bhatia;Umesh Jalan;Sudipto Chakraborty;Sang-Woong Yoon;Sebastien Nuttinck;Stephane Pinel;Joy Laskar

2003 33rd European Microwave Conference

Year: 2003 | Conference Paper |

Cited by: Papers (1)

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This paper presents the design, fabrication and measurement of a low voltage VCO operating at 1.8 GHz and fabricated in 0.5μm Silicon On Sapphire CMOS (SOS-CMOS) process. The VCO operates with supply voltage as low as 1V. The tuning range was measured to be 14% and the measured phase noise was -117.5 dBc/ Hz at an offset frequency of 1 MHz from the 1.77 GHz carrier. The VCO and the buffers consume...Show More

A 1.8 GHz Fully Integrated Low Voltage LC VCO in Silicon on Sapphire CMOS

Rahul Bhatia;Umesh Jalan;Sudipto Chakraborty;Sang-Woong Yoon;Sebastien Nuttinck;Stephane Pinel;Joy Laskar

2003 33rd European Microwave Conference

Year: 2003 | Conference Paper |

A 1.8 GHz fully integrated low voltage LC VCO in silicon on sapphire CMOS

R. Bhatia;U. Jalan;S. Chakraborty;S.-W. Yoon;S. Nuttinck;S. Pinel;J. Laskar

33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C)

Year: 2003 | Conference Paper |

Cited by: Papers (1)

This paper presents the design, fabrication and measurement of a low voltage VCO operating at 1.8 GHz and fabricated in 0.5/spl mu/m silicon on sapphire CMOS (SOS-CMOS) process. The VCO operates with supply voltage as low as 1V. The tuning range was measured to be 14% and the measured phase noise was -117.5 dBc/Hz at an offset frequency of 1 MHz from the 1.77 GHz carrier. The VCO and the buffers c...Show More

A 1.8 GHz fully integrated low voltage LC VCO in silicon on sapphire CMOS

R. Bhatia;U. Jalan;S. Chakraborty;S.-W. Yoon;S. Nuttinck;S. Pinel;J. Laskar

33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C)

Year: 2003 | Volume: 2 | Conference Paper |

Thermal analysis of AlGaN-GaN power HFETs

S. Nuttinck;B.K. Wagner;B. Banerjee;S. Venkataraman;E. Gebara;J. Laskar;H.M. Harris

IEEE Transactions on Microwave Theory and Techniques

Year: 2003 | Volume: 51, Issue: 12 | Journal Article |

Cited by: Papers (53)

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In this paper, we present a thermal analysis of AlGaN-GaN power heterojunction field-effect transistors (HFETs). We report the dc, small-signal, large-signal, and noise performances of AlGaN-GaN HFETs at high temperatures. The temperature coefficients measured for GaN HFETs are lower than that of GaAs pseudomorphic high electron-mobility transistors, confirming the potential of GaN for high-temper...Show More

Thermal analysis of AlGaN-GaN power HFETs

S. Nuttinck;B.K. Wagner;B. Banerjee;S. Venkataraman;E. Gebara;J. Laskar;H.M. Harris

IEEE Transactions on Microwave Theory and Techniques

Year: 2003 | Volume: 51, Issue: 12 | Journal Article |

Potential of 0.5 /spl mu/m SOI CMOS process towards low voltage, low power RF applications in multigigahertz regime

R. Bhatia;S. Jalan;S. Chakraborty;S.-W. Yoon;S. Nuttinck;S. Pinel;D. Nobbe;J. Laskar

Radio and Wireless Conference, 2003. RAWCON '03. Proceedings

Year: 2003 | Conference Paper |

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Silicon on insulator (SOI) has emerged as a strong contender for low power RF applications. This paper demonstrates the potential of SOI technology towards the development of next generation RF front ends. The capabilities of a 0.5 /spl mu/m SOI technology are illustrated by the design and fabrication of a low supply voltage, low power VCO operating at 1.8 GHz. The VCO operates with supply voltage...Show More

Potential of 0.5 /spl mu/m SOI CMOS process towards low voltage, low power RF applications in multigigahertz regime

R. Bhatia;S. Jalan;S. Chakraborty;S.-W. Yoon;S. Nuttinck;S. Pinel;D. Nobbe;J. Laskar

Radio and Wireless Conference, 2003. RAWCON '03. Proceedings

Year: 2003 | Conference Paper |

Embedded IC packaging technology for ultra-thin and highly compact RF module

S. Pinel;C.-H. Lee;S.-W. Yoon;S. Nuttinck;K. Lim;J. Laskar

53rd Electronic Components and Technology Conference, 2003. Proceedings.

Year: 2003 | Conference Paper |

Cited by: Papers (2)

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First Page of the Article

Embedded IC packaging technology for ultra-thin and highly compact RF module

S. Pinel;C.-H. Lee;S.-W. Yoon;S. Nuttinck;K. Lim;J. Laskar

53rd Electronic Components and Technology Conference, 2003. Proceedings.

Year: 2003 | Conference Paper |

High temperature performances of AlGaN/GaN power HFETs

S. Nuttinck;B. Banerjee;S. Venkataraman;J. Laskar;M. Harris

IEEE MTT-S International Microwave Symposium Digest, 2003

Year: 2003 | Conference Paper |

Cited by: Papers (4)

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We report the variation with temperature of key parameters extracted from dc, small-signal, large-signal, and noise measurements, of AlGaN/GaN HFETs. The rates obtained are lower than that of GaAs pHEMTs confirming the potential of GaN for high temperature applications.Show More

High temperature performances of AlGaN/GaN power HFETs

S. Nuttinck;B. Banerjee;S. Venkataraman;J. Laskar;M. Harris

IEEE MTT-S International Microwave Symposium Digest, 2003

Year: 2003 | Volume: 1 | Conference Paper |

Very high-Q inductors using RF-MEMS technology for System-On-Package wireless communication integrated module

S. Pinel;F. Cros;S. Nuttinck;S.-W. Yoon;M.G. Allen;J. Laskar

IEEE MTT-S International Microwave Symposium Digest, 2003

Year: 2003 | Conference Paper |

Cited by: Papers (22)

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We present the fabrication and the characterization of very high-Q suspended RF-MEMS inductors for RF applications in C-band, X-band and Ku-band. The fabrication technique relies on conventional MEMS micro-machining on a low cost ceramic RF substrate. This low temperature, low cost manufacturing technique is therefore compatible with the fabrication of a complete S-O-P wireless integrated module. ...Show More

Very high-Q inductors using RF-MEMS technology for System-On-Package wireless communication integrated module

S. Pinel;F. Cros;S. Nuttinck;S.-W. Yoon;M.G. Allen;J. Laskar

IEEE MTT-S International Microwave Symposium Digest, 2003

Year: 2003 | Volume: 3 | Conference Paper |

Wafer level packaging solution for high performance microwave inductors on Si substrates

S. Nuttinck;S. Pinel;J. Laskar

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.

Year: 2003 | Conference Paper |

Cited by: Papers (1)

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We report an innovative wafer level packaging solution for high performance microwave inductors on Si substrates. We present design rules for high-Q microwave inductors. Inductors fabricated on Si substrates using this technology exhibit Q's up to 50 in the C-band.Show More

Wafer level packaging solution for high performance microwave inductors on Si substrates

S. Nuttinck;S. Pinel;J. Laskar

2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.

Year: 2003 | Conference Paper |

High-frequency noise in AlGaN/GaN HFETs

S. Nuttinck;E. Gebara;J. Laskar;M. Harris

IEEE Microwave and Wireless Components Letters

Year: 2003 | Volume: 13, Issue: 4 | Journal Article |

Cited by: Papers (21)

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We present in this letter the benefits of GaN-based electronic devices for low-noise MMICs. A temperature-dependent two-temperature noise model for AlGaN/GaN HFETs is implemented on a wide range of bias conditions. This study enables to access the device high-frequency noise parameters, and allow a comparison of the noise performances with SiC and GaAs technologies.Show More

High-frequency noise in AlGaN/GaN HFETs

S. Nuttinck;E. Gebara;J. Laskar;M. Harris

IEEE Microwave and Wireless Components Letters

Year: 2003 | Volume: 13, Issue: 4 | Journal Article |

Improved RF modeling techniques for enhanced AlGaN/GaN HFETs

S. Nuttinck;E. Gebara;J. Laskar;J. Shealy;M. Harris

IEEE Microwave and Wireless Components Letters

Year: 2003 | Volume: 13, Issue: 4 | Journal Article |

Cited by: Papers (9)

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Modeling procedures of an AlGaN/GaN HFET that incorporate the effects of both a GaN cap layer and an AlN sub-buffer layer are presented. A single off-state measurement method to extract all eight parasitic elements of an enhanced HFET has been successfully applied. In addition, procedures to model the nonlinear drain-to-source current characteristics featuring a kink are described.Show More

Improved RF modeling techniques for enhanced AlGaN/GaN HFETs

S. Nuttinck;E. Gebara;J. Laskar;J. Shealy;M. Harris

IEEE Microwave and Wireless Components Letters

Year: 2003 | Volume: 13, Issue: 4 | Journal Article |

Comparison between Si-LDMOS and GaN-based microwave power transistors

S. Nuttinck;E. Gebara;J. Laskar;N. Rorsman;J. Olsson;H. Zirath;K. Eklund;M. Harris

Proceedings. IEEE Lester Eastman Conference on High Performance Devices

Year: 2002 | Conference Paper |

Cited by: Patents (1)

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We present in this paper a performance comparison between Si-LDMOSTs with an optimized structure for high breakdown voltage, and AlGaN/GaN power HFETs, based on DC-I/V, small-signal and RF power measurement results.Show More

Comparison between Si-LDMOS and GaN-based microwave power transistors

S. Nuttinck;E. Gebara;J. Laskar;N. Rorsman;J. Olsson;H. Zirath;K. Eklund;M. Harris

Proceedings. IEEE Lester Eastman Conference on High Performance Devices

Year: 2002 | Conference Paper |

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