Comparison between Si-LDMOS and GaN-based microwave power transistors

We present in this paper a performance comparison between Si-LDMOSTs with an optimized structure for high breakdown voltage, and AlGaN/GaN power HFETs, based on DC-I/V, small-signal and RF power measurement results.

I. Introduction

The large and rapidly growing market for wireless telecommunication has a great need for low cost, high performance microwave solutions. Both GaN-based and Si-LDMOS transistors are of great interest because they offer high power capabilities at RF frequencies.