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Resonant Tunneling Diodes: Mid-Infrared Sensing at Room Temperature
Florian Rothmayr;Edgar David Guarin Castro;Fabian Hartmann;Georg Knebl;Anne Schade;Sven Höfling;Johannes Koeth;Andreas Pfenning;Lukas Worschech;Victor Lopez-Richard
2023 Conference on Lasers and Electro-Optics (CLEO)
Year: 2023 | Conference Paper |
Resonant tunneling diode photodetectors with GaInAsSb absorbers appear to be promising architectures with a simple design for mid-infrared sensing operations at room temperature. We demonstrate how the drift, accumulation and escape efficiencies of photogenerated carriers influence the electrostatic modulation of the sensor’s electrical response.Show More
Accurate Quantum Transport Modeling of High-Speed In0.53Ga0.47As/AlAs Double-Barrier Resonant Tunneling Diodes
Davide Cimbri;Begüm Yavas-Aydin;Fabian Hartmann;Fauzia Jabeen;Lukas Worschech;Sven Höfling;Edward Wasige
In this article, we demonstrate a reliable physics-based simulation approach to accurately model high-speed In0.53Ga0.47As/AlAs double-barrier resonant tunneling diodes (RTDs). It relies on the nonequilibrium Green’s function (NEGF) formalism implemented in SILVACO Atlas TCAD quantum simulation package to closely mimic the actual device physics, together with the judicious choice of the material p...Show More
Optical bistability in electrically driven polariton condensates
Matthias Amthor;Christian Metzger;Sebastian Brodbeck;Lukas Worschech;Martin Kamp;Christian Schneider;Sven Höfling;Timothy C. H. Liew;Ivan A. Shelykh;Alexey V. Kavokin
2015 Conference on Lasers and Electro-Optics (CLEO)
Year: 2015 | Conference Paper |
Sub-kT Switching in Asymmetric Y-Transistors With Internal Feedback Coupling
Stephan Reitzenstein;David Hartmann;Martin Kamp;Lukas Worschech
We report on nonlinear transport phenomena in an asymmetric Y-transistor. The left branch acting as gate for the channel formed between the stem and the right branch of the Y-transistor is isolated from the branching section via a narrow constriction. The transfer characteristics of the Y-transistor is studied at low temperature in two configurations for which the stem is used either as drain cont...Show More
Electrically driven exciton-polariton lasers
S. Höfling;C. Schneider;A. Rahimi-Iman;N.Y. Kim;M. Amthor;J. Fischer;M. Lermer;I.G. Savenko;I.G Shelykh;V.D. Kulakovskii;L. Worschech;M. Kamp;S. Reitzenstein;M. Durnev;A.V. Kavokin;A. Forchel;Y. Yamamoto
2014 Conference on Lasers and Electro-Optics (CLEO) - Laser Science to Photonic Applications
Year: 2014 | Conference Paper |
Electrically driven exciton-polariton lasers
S. Höfling;C. Schneider;A. Rahimi-Iman;N. Y. Kim;J. Fischer;I. G. Savenko;M. Amthor;M. Lermer;A. Wolf;L. Worschech;V. D. Kulakovskii;I. A. Shelykh;M. Kamp;S. Reitzenstein;Y. Yamamoto;A. Forchel
2013 IEEE 2nd International Workshop "Nonlinear Photonics" (NLP*2013)
Year: 2013 | Conference Paper |
Exciton-polaritons are hybrid light-matter quasiparticles. They are composite and interacting bosons which can condense dynamically in a single-particle ground state via stimulated scattering. The formation of exciton-polaritons under electrical pumping has been demonstrated in quasi two dimensional systems [1-3]. In this work, we discuss the non-linear polariton emission caused by stimulated scat...Show More
Site-controlled In(Ga)As quantum dots with narrow emission linewidth for integration into nanophotonic devices
Alexander Huggenberger;Christian Schneider;Tobias Heindel;Martin Kamp;Stephan Reitzenstein;Sven Höfling;Lukas Worschech;Alfred Forchel
Site-controlled In(Ga)As quantum dots (QD) were grown by molecular beam epitaxy on pre-patterned GaAs (001) substrates and integrated into optical resonators. The emission linewidth of single site-controlled QDs was probed using a standard micro-photoluminescence setup and exhibits values down to 38 μeV. We find a typical fine structure splitting of ∼32 μeV. Both values are comparable to self-asse...Show More
Influence of GaSb and AlGaInAsSb as Barrier Material on $\sim$2.8-$\mu$m GaSb-Based Diode Laser Properties
T. Lehnhardt;A. Herrmann;M. Kamp;S. Höfling;L. Worschech;A. Forchel
GaSb-based diode lasers emitting at a wavelength of 2.8 μm have been grown. The devices feature GaSb or Al0.21 Ga0.58 In0.21 As0.20 Sb0.80 barrier layers for the quantum wells, respectively. The transparency current density, modal gain, internal absorption, and characteristic temperature have been investigated on both devices. Since the barrier layers serve at the same time as waveguide for the la...Show More
Exciton-polariton laser diodes
C. Schneider;N.Y. Kim;A. Rahimi-Iman;W.H. Nitsche;M. Lermer;M. Kamp;S. Reitzenstein;L. Worschech;S. Höfling;Y. Yamamoto;A. Forchel
22nd IEEE International Semiconductor Laser Conference
Year: 2010 | Conference Paper |
Exciton-polariton laser diodes are realized by integrating four InGaAs quantum wells in high quality factor doped distributed Bragg reflector microcavities. Efficient current injection into the active region allow to preserve the strong coupling regime between excitons and photons across the threshold of polariton lasing.Show More
Tunable Long Wavelength ( $\sim$2.8 $\mu$m) GaInAsSb–GaSb Quantum-Well Binary Superimposed Grating Lasers
Thomas Lehnhardt;Sven Hofling;Martin Kamp;Lukas Worschech;Alfred Forchel
IEEE Photonics Technology Letters
Cited by: Papers (1)
GaInAsSb-GaSb quantum-well diode lasers emitting around 2.80 μm with a single device tuning range of 60 nm are presented. This was achieved by the implementation of binary superimposed metal gratings. The lasers work at room temperature in continuous-wave mode and show tunable single-mode emission with a sidemode suppression ratio of more than 30 dB. The optical output power of more than 1 mW make...Show More
Numerical and Experimental Study of the $Q$ Factor of High-$Q$ Micropillar Cavities
Niels Gregersen;Stephan Reitzenstein;Caroline Kistner;Micha Strauss;Christian Schneider;Sven Höfling;Lukas Worschech;Alfred Forchel;Torben Roland Nielsen;Jesper Mørk;Jean-Michel Gerard
Micropillar cavities are potential candidates for high-efficiency single-photon sources and are testbeds for cavity quantum electrodynamics experiments. In both applications a high quality (Q) factor is desired. It was recently shown that the Q of high-Q semiconductor micropillar cavities exhibit pronounced quasi-periodic variations in the regime from 1 to 4 μm, and a detailed understanding of the...Show More
Magneto-optical cavity quantum electrodynamics effects in quantum dot micropillar systems
S. Reitzenstein;S. Münch;P. Franeck;A. Rahimi-Iman;T. Heindel;A. Löffler;S. Höfling;L. Worschech;A. Forchel;I. V. Ponomarev;T. L. Reinecke
CLEO/QELS: 2010 Laser Science to Photonic Applications
Year: 2010 | Conference Paper |
Interband cascade lasers for wavelength specific applications in the 3–4 µm spectral range
A. Bauer;M. Dallner;M. Kamp;S. Höfling;L. Worschech;A. Forchel;L. Nähle;P. Fuchs;M. Fischer;J. Koeth;M. Motyka;G. Sęk;K. Ryczko;J. Misiewicz
CLEO/QELS: 2010 Laser Science to Photonic Applications
Year: 2010 | Conference Paper |
Interband cascade lasers (ICLs) are considered to be a very promising candidate for covering the mid-infrared wavelength range between 3 μm and 4 μm with just one type of semiconductor laser. Our contribution strengthens this thesis in terms of electro-optical results obtained from broad area and ridge waveguide ICL devices. A set of six ICLs with varied widths of the optically active InAs QWs sho...Show More
Characterization of Three-Terminal Junctions Operated as In-Plane Gated Field-Effect Transistors
The field-effect transistor operation of monolithic three-terminal junctions (TTJs) is demonstrated at room temperature. The TTJs are based on a modulation-doped GaAs/AlGaAs heterostructure with a 2-D electron gas situated 33 nm below the surface. By applying mask technology and wet chemical etching, several TTJs were fabricated, and the interplay between the TTJ geometry and the transistor charac...Show More
Monolithically Integrated Logic nor Gate Based on GaAs/AlGaAs Three-Terminal Junctions
IEEE Electron Device Letters
Cited by: Papers (23)
Room-temperature operation of a logic NOR gate is demonstrated. The NOR gate is based on three three-terminal junctions (TTJs) monolithically integrated in a modulation-doped GaAs/AlGaAs heterostructure without any external load resistance. For the logic NOR gate, one of the TTJs serves as load transistor, whereas the other two are used as inputs. Each TTJ has a 90-nm-wide channel and shows clear ...Show More
Light Matter Interaction Effects in III-V and II-VI Quantum Dot Micreresonators
S. Reitzenstein;L. Worschech;S. Hofling;K. Brunner;A. Forchel;V. Kulakovskii;T.L. Reinecke;D. Press;S. Gotzinger;Y Yamamoto
2007 International Nano-Optoelectronics Workshop
Year: 2007 | Conference Paper |
Engineering the interaction of light with matter allows one to tune important properties of solids like e.g. the spontaneous emission rate or the spontaneous emission coupling factor into a laser mode. We have investigated light matter interaction effects in semiconductors using (QD) micropillar cavities and micro disks containing dots with strongly varying oscillator strength and different Q-fact...Show More
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