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Li Guohua - IEEE Xplore Author Profile

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A new material structure with Al/sub 0.22/Ga/sub 0.78/As/In/sub 0.15/Ga/sub 0.85/As/GaAs emitter spacer layer and GaAs/In/sub 0.15/Ga/sub 0.85/As/GaAs well for resonant tunneling diodes is designed and the corresponding device is fabricated. RTDs DC characteristics are measured at room temperature. Peak-to-valley current ratio (PVCR) is 7.44 for RTD analysis on these results suggests that the mate...Show More
A process for fabricating n-channel JFET/SOS (junction field-effect transistors on silicon-on-sapphire) has been researched. The gate p/sup +/-n junction was obtained by diffusion, and the conductive channel formed by a double ion implantation. Both enhancement and depletion mode transistors were fabricated in different processing conditions. From the results of the Co/sub 60/ /spl gamma/-ray irra...Show More
CMOS/SOS devices have lower carrier mobility and higher channel leakage current than bulk silicon CMOS devices. These mainly result from the defects in the heteroepitaxial silicon film, especially from the defects near the Si-sapphire interface. This paper describes an experimental study of the improvement in CMOS/SOS devices characteristics resulting from improved epitaxial silicon quality which ...Show More
In this paper, we investigate the effect of silicon surface cleaning prior to oxidation on the reliability of ultra-thin oxides. It is demonstrated that chemical preoxide grown in H/sub 2/SO/sub 4//H/sub 2/O/sub 2/(SPM) solution prior to oxidation provides better oxide integrity than both HF-based solution dipping and preoxide grown in RCA SC1 or SC2 solutions. It is also found that the oxides wit...Show More