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High performance resonant tunneling diode on a new material structure
Wang Jianlin;Liu Zhongli;Wang Liangchen;Zeng Yiping;Yang Fuhua;Bai Yunxia
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.
Year: 2004 | Conference Paper |
A new material structure with Al/sub 0.22/Ga/sub 0.78/As/In/sub 0.15/Ga/sub 0.85/As/GaAs emitter spacer layer and GaAs/In/sub 0.15/Ga/sub 0.85/As/GaAs well for resonant tunneling diodes is designed and the corresponding device is fabricated. RTDs DC characteristics are measured at room temperature. Peak-to-valley current ratio (PVCR) is 7.44 for RTD analysis on these results suggests that the mate...Show More
JFET/SOS devices: processing and gamma radiation effects
1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)
Year: 1998 | Conference Paper |
A process for fabricating n-channel JFET/SOS (junction field-effect transistors on silicon-on-sapphire) has been researched. The gate p/sup +/-n junction was obtained by diffusion, and the conductive channel formed by a double ion implantation. Both enhancement and depletion mode transistors were fabricated in different processing conditions. From the results of the Co/sub 60/ /spl gamma/-ray irra...Show More
Improvement of CMOS/SOS devices characteristics by a modified solid phase epitaxy
1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)
Year: 1998 | Conference Paper |
CMOS/SOS devices have lower carrier mobility and higher channel leakage current than bulk silicon CMOS devices. These mainly result from the defects in the heteroepitaxial silicon film, especially from the defects near the Si-sapphire interface. This paper describes an experimental study of the improvement in CMOS/SOS devices characteristics resulting from improved epitaxial silicon quality which ...Show More
Dependence of ultra-thin gate oxide reliability on surface cleaning approach
1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)
Year: 1998 | Conference Paper |
Cited by: Papers (1)
In this paper, we investigate the effect of silicon surface cleaning prior to oxidation on the reliability of ultra-thin oxides. It is demonstrated that chemical preoxide grown in H/sub 2/SO/sub 4//H/sub 2/O/sub 2/(SPM) solution prior to oxidation provides better oxide integrity than both HF-based solution dipping and preoxide grown in RCA SC1 or SC2 solutions. It is also found that the oxides wit...Show More
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