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Shakarim Soltanayev - IEEE Xplore Author Profile

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Author details

Shakarim Soltanayev

Publications

5

Citations

142

Publications by Year

20192022

Co-Authors:

Abdelrahman AbdelhamedKazutoshi AkitaSunder Ali KhowajaAditya AroraThong Bach

Show All Co-Authors (134)

Shakarim Soltanayev

Affiliation

Department of Electrical Engineering

Ulsan National Institute of Science and Technology (UNIST)

Ulsan, Korea

Publication Topics

Noisy Images,
Deep Neural Network,
Ground Truth Image,
Adam Optimizer,
Clear Image,
Denoising Methods,
Gaussian Noise,
Image Domain,
Image Reconstruction,
Loss Function,
MNIST Dataset,
Measurement Data

Biography

Shakarim Soltanayev received the B.E. degree in electrical and electronic engineering from the Nazarbayev University, Kazakhstan, in 2017 and the M.S. degree electrical engineering from UNIST, South Korea, in 2019. He is currently a Research Engineer at Huawei Technologies in Moscow, Russia. His current research interests are in computer vision, image processing, and deep learning. In the context of computer vision, his interests are in super-resolution, image restoration and image generation.(Based on document published on 7 July 2020).

Publications

5

Citations

142

Publications by Year

20192022

Co-Authors:

Abdelrahman Abdelhamed
Kazutoshi Akita
Sunder Ali Khowaja
Aditya Arora
Thong Bach

Show All Co-Authors (134)

Author's Published Works

Search History

Showing 1-25 of 56 results

Journals (36)

Conferences (18)

Early Access Articles (1)

Magazines (1)

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Ickhyun Song(52)
John D. Cressler(37)
Moon-Kyu Cho(24)
Zachary E. Fleetwood(17)
Nelson E. Lourenco(15)
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA(26)
Defense Threat Reduction Agency, Fort Belvoir, VA, USA(9)
Naval Research Laboratory, Washington, DC, USA(7)
School of Electrical and Computer Engineering, Georgia Tech, Atlanta, GA, USA(5)
School of Electrical and Computer Engineering, Oklahoma State University, Stillwater, OK, USA(5)
IEEE Transactions on Nuclear Science(18)
IEEE Microwave and Wireless Components Letters(6)
IEEE Electron Device Letters(3)
2014 IEEE International Symposium on Circuits and Systems (ISCAS)(2)
IEEE Access(2)
IEEE(56)
Melbourne, VIC, Australia(2)
Orlando, FL, USA(2)
Beijing, China(1)
Bremen, Germany(1)
Honolulu, HI, USA(1)
Noise Figure(17)
Low-noise Amplifier(16)
Bipolar Transistor(13)
Two-photon Absorption(13)
Single Event Transient(11)

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Effects of Mechanical Stress on Electrical Characteristics of IGZO-Based Integrated 1T1M on Flexible Substrate

Seung Joo Myoung;Hyunkyu Lee;Dong Hyeop Shin;Youngjin Seo;Wonjung Kim;Jung Rae Cho;Changwook Kim;Jong-Ho Bae;Sung-Jin Choi;Dong Myong Kim;Ickhyun Song;Dae Hwan Kim

IEEE Transactions on Electron Devices

Year: 2025 | Early Access Article |

In this study, indium-gallium-zinc oxide (InGaZnO, IGZO) thin-film transistors (TFTs) and memristors are integrated as one transistor-one memristor (1T1M) structure on flexible substrate, and its electrical characteristics are analyzed. The fabrication process includes the formation of IGZO TFTs on flexible substrates and the deposition of memristors on top of TFTs. For the integrated structure, m...Show More

Effects of Mechanical Stress on Electrical Characteristics of IGZO-Based Integrated 1T1M on Flexible Substrate

Seung Joo Myoung;Hyunkyu Lee;Dong Hyeop Shin;Youngjin Seo;Wonjung Kim;Jung Rae Cho;Changwook Kim;Jong-Ho Bae;Sung-Jin Choi;Dong Myong Kim;Ickhyun Song;Dae Hwan Kim

IEEE Transactions on Electron Devices

Year: 2025 | Early Access Article |

A Single-Ended-to-Differential Low-Noise Amplifier With Transformer-Based Feedback Network for 3–5 GHz UWB Applications

Ickhyun Song;Sang Gyun Kim;Seung Hwan Jung;Moon-Kyu Cho

Year: 2024 | Volume: 12 | Journal Article |

Cited by: Papers (1)

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A wideband single-ended-to-differential (S-to-D) low-noise amplifier (LNA) for ultra-wideband (UWB) wireless sensors and internet-of-things applications is presented. In order to simultaneously provide wideband input matching characteristics, low-noise performance, and flat in-band gain response, a common-source input stage with on-chip transformer-based reactive feedback network is proposed. With...Show More

A Single-Ended-to-Differential Low-Noise Amplifier With Transformer-Based Feedback Network for 3–5 GHz UWB Applications

Ickhyun Song;Sang Gyun Kim;Seung Hwan Jung;Moon-Kyu Cho

Year: 2024 | Volume: 12 | Journal Article |

Toward a Hybrid RF/Optical Lunar Communication System (LunarComm)

Waseem Raza;Ethan Abele;John O'Hara;Behnaz Sadr;Peter LoPresti;Ali Imran;Wooyeol Choi;Ickhyun Song;Serhat Altunc;Obadiah Kegege;Sabit Ekin

Year: 2022 | Volume: 36, Issue: 6 | Magazine Article |

Cited by: Papers (6)

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The prospect of mankind returning to the Moon has garnered a great amount of attention in recent years. Dozens of lunar missions are planned for the coming decade which will require the development of a sustainable communication infrastructure with high data rates and minimal latency. Space communication systems thus far have relied on Radio Frequency (RF) links alone, but recent developments in l...Show More

Toward a Hybrid RF/Optical Lunar Communication System (LunarComm)

Waseem Raza;Ethan Abele;John O'Hara;Behnaz Sadr;Peter LoPresti;Ali Imran;Wooyeol Choi;Ickhyun Song;Serhat Altunc;Obadiah Kegege;Sabit Ekin

Year: 2022 | Volume: 36, Issue: 6 | Magazine Article |

Voltage-Controlled Oscillator Utilizing Inverse-Mode SiGe-HBT Biasing Circuit for the Mitigation of Single-Event Effects

Pujan K. C. Mishu;Moon-Kyu Cho;Ani Khachatrian;Stephen P. Buchner;Dale McMorrow;Pauline Paki;John D. Cressler;Ickhyun Song

IEEE Transactions on Nuclear Science

Year: 2022 | Volume: 69, Issue: 6 | Journal Article |

Cited by: Papers (6)

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The advantages and the tradeoffs associated with the use of inverse-mode (IM) silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) biasing circuitry in radio-frequency (RF) voltage-controlled oscillators (VCOs) have been investigated and the performance of proposed VCOs (IM VCOs) is compared with VCOs with conventional forward-mode (FM) SiGe-HBTs (FM VCOs). Where the high-frequency p...Show More

Voltage-Controlled Oscillator Utilizing Inverse-Mode SiGe-HBT Biasing Circuit for the Mitigation of Single-Event Effects

Pujan K. C. Mishu;Moon-Kyu Cho;Ani Khachatrian;Stephen P. Buchner;Dale McMorrow;Pauline Paki;John D. Cressler;Ickhyun Song

IEEE Transactions on Nuclear Science

Year: 2022 | Volume: 69, Issue: 6 | Journal Article |

A S/C/X/Ku-band, 4-Tap, Digitally Controllable Analog FIR Filter with Reconfigurable Bandwidth and RF Filtering Profile

Moon-Kyu Cho;Ickhyun Song;Nelson E. Lourenco;Adilson S. Cardoso;Christopher T. Coen;William B. Hunter;Douglas R. Denison;John D. Cressler

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

Year: 2021 | Conference Paper |

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A proposed wideband integrated 4-tap analog finite impulse response (AFIR) filter has been implemented in silicon germanium (SiGe) technology for use in direct-throughput of RF signals in the microwave and millimeter-wave spectrum. To simultaneously provide bandwidth and RF filtering profile tunability, a wideband coefficient/polarity control circuit and time delay elements are utilized. The propo...Show More

A S/C/X/Ku-band, 4-Tap, Digitally Controllable Analog FIR Filter with Reconfigurable Bandwidth and RF Filtering Profile

Moon-Kyu Cho;Ickhyun Song;Nelson E. Lourenco;Adilson S. Cardoso;Christopher T. Coen;William B. Hunter;Douglas R. Denison;John D. Cressler

2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

Year: 2021 | Conference Paper |

Highly-Efficient CMOS Rectifier for Wide Range of Input RF Power in Energy-Harvesting Systems

Pujan K. C. Mishu;Ickhyun Song

2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS)

Year: 2021 | Conference Paper |

Cited by: Papers (4)

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We propose a CMOS rectifier with improved power conversion efficiency (PCE) at both low and high RF power, and enhanced dynamic range (DR). The proposed design utilizes 1) the additional boosting circuit to increase the overdrive voltage of transistors, which help achieve higher forward current and higher PCE at low RF power and 2) self-biasing technique implemented by additional diodes and capaci...Show More

Highly-Efficient CMOS Rectifier for Wide Range of Input RF Power in Energy-Harvesting Systems

Pujan K. C. Mishu;Ickhyun Song

2021 IEEE International Midwest Symposium on Circuits and Systems (MWSCAS)

Year: 2021 | Conference Paper |

Emulating UAV Motion by Utilizing Robotic Arm for mmWave Wireless Channel Characterization

Amit Kachroo;Collin A. Thornton;Md. Arifur Rahman Sarker;Wooyeol Choi;He Bai;Ickhyun Song;John F. O’Hara;Sabit Ekin

IEEE Transactions on Antennas and Propagation

Year: 2021 | Volume: 69, Issue: 10 | Journal Article |

Cited by: Papers (11)

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In this article, millimeter-wave (mmWave) wireless channel characteristics (Doppler spread and path loss modeling) for unmanned aerial vehicle (UAV)-assisted communication is analyzed and studied by emulating the real UAV motion using a robotic arm. The motion considers the actual turbulence caused by the wind gusts to the UAV in the atmosphere, which is statistically modeled by the widely used Dr...Show More

Emulating UAV Motion by Utilizing Robotic Arm for mmWave Wireless Channel Characterization

Amit Kachroo;Collin A. Thornton;Md. Arifur Rahman Sarker;Wooyeol Choi;He Bai;Ickhyun Song;John F. O’Hara;Sabit Ekin

IEEE Transactions on Antennas and Propagation

Year: 2021 | Volume: 69, Issue: 10 | Journal Article |

Investigation of fT-Doubler Technique to Improve RF Performance of Inverse-Mode SiGe HBTs

Md Arifur R. Sarker;Anup P. Omprakash;Moon-Kyu Cho;John D. Cressler;Ickhyun Song

IEEE Microwave and Wireless Components Letters

Year: 2020 | Volume: 30, Issue: 9 | Journal Article |

Cited by: Papers (6)

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This letter presents the application of the fT-doubler technique, for the first time, to improve the unitygain frequency (fT) of inverse-mode (TM) silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). An fT-doubler structure, which used three identical SiGe HBTs with the same emitter area of 0.07 (width) × 0.9 (length) μm2, is implemented in a commercial 0.13-μm SiGe-BiCMOS technolog...Show More

Investigation of fT-Doubler Technique to Improve RF Performance of Inverse-Mode SiGe HBTs

Md Arifur R. Sarker;Anup P. Omprakash;Moon-Kyu Cho;John D. Cressler;Ickhyun Song

IEEE Microwave and Wireless Components Letters

Year: 2020 | Volume: 30, Issue: 9 | Journal Article |

Self-Heating and Electrothermal Properties of Advanced Sub-5-nm Node Nanoplate FET

Ilho Myeong;Ickhyun Song;Min Jae Kang;Hyungcheol Shin

IEEE Electron Device Letters

Year: 2020 | Volume: 41, Issue: 7 | Journal Article |

Cited by: Papers (33)

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In this paper, Self-Heating Effect (SHE) of Gate-All-Around (GAA) nanoplate field effect transistor (FET) with variations of active area specifications including number of vertically stacked channels, metal gate thickness, and channel width, is investigated using TCAD simulations. Our research suggests that varying these architecture parameters not only affect overall performance of sub-5-nm node ...Show More

Self-Heating and Electrothermal Properties of Advanced Sub-5-nm Node Nanoplate FET

Ilho Myeong;Ickhyun Song;Min Jae Kang;Hyungcheol Shin

IEEE Electron Device Letters

Year: 2020 | Volume: 41, Issue: 7 | Journal Article |

A Wide Locking-Range, Low Phase-Noise and High Output Power D-Band SiGe PLL

Saeed Zeinolabedinzadeh;Ickhung Song;Mehmet Kaynak;John D. Cressler

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

Year: 2020 | Conference Paper |

Cited by: Papers (4)

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A fully integrated, wide locking-range fundamental frequency SiGe phase-locked-loop (PLL) at D-band is proposed which utilizes coupled voltage-controlled-oscillators (VCOs) to generate and distribute balanced RF signals in a symmetric and compact form factor. The proposed technique facilitates the balanced LO distribution, increases the output power, improves the phase noise, and increases the loc...Show More

A Wide Locking-Range, Low Phase-Noise and High Output Power D-Band SiGe PLL

Saeed Zeinolabedinzadeh;Ickhung Song;Mehmet Kaynak;John D. Cressler

2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

Year: 2020 | Conference Paper |

A Simple and Accurate Modeling Method of Channel Thermal Noise Using BSIM4 Noise Models

Ilho Myeong;Juhyun Kim;Hyungwoo Ko;Ickhyun Song;Yongseok Kim;Hyungcheol Shin

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Year: 2020 | Volume: 39, Issue: 12 | Journal Article |

Cited by: Papers (6)

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This article presents a method for extracting a channel thermal noise (Sid) using analytical equations and measured noise parameters. Among the four noise parameters considered (Rn, Gopt, Bopt, and NFmin), the equations of Rn and NFmin were used to extract Sid, since the Sid extracted from Gopt and Bopt was affected more by measurement variations. NTNOI, the noise enhancement factor of the charge-...Show More

A Simple and Accurate Modeling Method of Channel Thermal Noise Using BSIM4 Noise Models

Ilho Myeong;Juhyun Kim;Hyungwoo Ko;Ickhyun Song;Yongseok Kim;Hyungcheol Shin

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Year: 2020 | Volume: 39, Issue: 12 | Journal Article |

A Two-Way Wideband Active SiGe BiCMOS Power Divider/Combiner for Reconfigurable Phased Arrays With Controllable Beam Width

Moon-Kyu Cho;Ickhyun Song;John D. Cressler

Year: 2020 | Volume: 8 | Journal Article |

Cited by: Papers (3)

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This paper proposes a reconfigurable two-way wideband active power divider/combiner based on bi-directional amplifier and absorptive series-shunt switch techniques. A multi-octave operational bandwidth and flat gain response with bi-directional operation are simultaneously achieved using bidirectional distributed amplifiers (BDAs). The reconfigurable functionality and fast mode selection are obtai...Show More

A Two-Way Wideband Active SiGe BiCMOS Power Divider/Combiner for Reconfigurable Phased Arrays With Controllable Beam Width

Moon-Kyu Cho;Ickhyun Song;John D. Cressler

Year: 2020 | Volume: 8 | Journal Article |

A 2-20 GHz SiGe Amplitude Control Circuit with Differential Signal Selectivity for Wideband Reconfigurable Electronics

Moon-Kyu Cho;Ickhyun Song;Nelson E. Lourenco;Adilson S. Cardoso;Christopher T. Coen;Douglas R. Denison;John D. Cressler

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

Year: 2019 | Conference Paper |

Cited by: Papers (1)

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This paper presents a wideband integrated single-tap circuit for a general-purpose, high-performance transversal filter application, and which has been implemented in silicon germanium (SiGe) technology for use in direct-throughput processing of RF signals in the microwave and millimeter-wave spectrum. To provide wideband instantaneous reconfigurability and multi-function RF capability, the propos...Show More

A 2-20 GHz SiGe Amplitude Control Circuit with Differential Signal Selectivity for Wideband Reconfigurable Electronics

Moon-Kyu Cho;Ickhyun Song;Nelson E. Lourenco;Adilson S. Cardoso;Christopher T. Coen;Douglas R. Denison;John D. Cressler

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

Year: 2019 | Conference Paper |

A W-Band SiGe Transceiver with Built-in Self-Test

S. Zeinolabedinzadeh;A. C. Ulusoy;R. L. Schmid;F. Inanlou;I. Song;T. Chi;J. S. Park;H. Wang;J. D. Cressler

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

Year: 2019 | Conference Paper |

Cited by: Papers (6)

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A fully integrated W-band silicon-germanium (SiGe) transceiver is presented which provides a loop-back built-in self-test (BIST) functionality that allows continuous monitoring of the health of the system while in use. In addition, it facilitates on-die measurement of the transmit and receive channels to aid in characterization of the transceivers inside a large phased array system. Measurement re...Show More

A W-Band SiGe Transceiver with Built-in Self-Test

S. Zeinolabedinzadeh;A. C. Ulusoy;R. L. Schmid;F. Inanlou;I. Song;T. Chi;J. S. Park;H. Wang;J. D. Cressler

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

Year: 2019 | Conference Paper |

Best Practices for Using Electrostatic Discharge Protection Techniques for Single-Event Transient Mitigation

Moon-Kyu Cho;Ickhyun Song;Fleetwood E. Zachary;Ani Khachatrian;Jeffrey H. Warner;Stephen P. Buchner;Dale McMorrow;Pauline Paki;John D. Cressler

IEEE Transactions on Nuclear Science

Year: 2019 | Volume: 66, Issue: 1 | Journal Article |

Cited by: Papers (4)

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We provide “best practices” for single-event transient (SET) mitigation using electrostatic discharge (ESD) protection techniques. We investigate the correlation between SET suppression and RF performance when ESD protection circuits for SET mitigation are combined with various RF switches. The three different single-pole single-throw (SPST) switch configurations (conventional design, floating bod...Show More

Best Practices for Using Electrostatic Discharge Protection Techniques for Single-Event Transient Mitigation

Moon-Kyu Cho;Ickhyun Song;Fleetwood E. Zachary;Ani Khachatrian;Jeffrey H. Warner;Stephen P. Buchner;Dale McMorrow;Pauline Paki;John D. Cressler

IEEE Transactions on Nuclear Science

Year: 2019 | Volume: 66, Issue: 1 | Journal Article |

A 1–20 GHz Distributed, Stacked SiGe Power Amplifier

Sunil Rao;Tianyu Chang;Ickhyun Song;Moon-Kyu Chc;John D. Cressler

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

Year: 2018 | Conference Paper |

Cited by: Papers (1)

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This paper presents a wideband distributed power amplifier that operates from 1–20 GHz. The peak output power is 19.5 dBm, with a peak PAE of 28% at 1 GHz. The power amplifier utilizes a distributed amplifier topology with artificial transmission lines, as well as transistor stacking, to achieve high output power and wide bandwidth. For the amplifier core power cells, a stack-up of four SiGe HBTs ...Show More

A 1–20 GHz Distributed, Stacked SiGe Power Amplifier

Sunil Rao;Tianyu Chang;Ickhyun Song;Moon-Kyu Chc;John D. Cressler

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

Year: 2018 | Conference Paper |

Cryogenic Characterization of RF Low-Noise Amplifiers Utilizing Inverse-Mode SiGe HBTs for Extreme Environment Applications

Ickhyun Song;Adilson S. Cardoso;Hanbin Ying;Moon-Kyu Cho;John D. Cressler

IEEE Transactions on Device and Materials Reliability

Year: 2018 | Volume: 18, Issue: 4 | Journal Article |

Cited by: Papers (3)

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The cryogenic performance of radiation-hardened radio-frequency (RF) low-noise amplifiers (LNAs) is presented. The LNA, which was originally proposed for the mitigation of single-event transients (SETs) in a radiation environment, uses inverse-mode silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) in its core cascode stages. In this prototype, the upper common-base SiGe HBT is con...Show More

Cryogenic Characterization of RF Low-Noise Amplifiers Utilizing Inverse-Mode SiGe HBTs for Extreme Environment Applications

Ickhyun Song;Adilson S. Cardoso;Hanbin Ying;Moon-Kyu Cho;John D. Cressler

IEEE Transactions on Device and Materials Reliability

Year: 2018 | Volume: 18, Issue: 4 | Journal Article |

A True Time Delay-based SiGe Bi-directional T/R Chipset for Large-Scale Wideband Timed Array Antennas

Moon-Kyu Cho;Ickhyun Song;John D. Cressler

2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

Year: 2018 | Conference Paper |

Cited by: Papers (34)

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This paper presents a true time delay (TTD)-based transmit/receive (T /R) chipset with 508 ps time delay and 31.5 dB amplitude control for large-scale wideband timed array. The proposed T /R chipset consists of a true time delay circuit, a switched T -type attenuator, and digital control circuits. To compensate the frequency dependent insertion loss characteristics of single-pole double-throw swit...Show More

A True Time Delay-based SiGe Bi-directional T/R Chipset for Large-Scale Wideband Timed Array Antennas

Moon-Kyu Cho;Ickhyun Song;John D. Cressler

2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

Year: 2018 | Conference Paper |

A 28-GHz Switchless, SiGe Bidirectional Amplifier Using Neutralized Common-Emitter Differential Pair

Yunyi Gong;Moon-Kyu Cho;Ickhyun Song;John D. Cressler

IEEE Microwave and Wireless Components Letters

Year: 2018 | Volume: 28, Issue: 8 | Journal Article |

Cited by: Papers (7)

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This letter presents a 28-GHz switchless, SiGe bidirectional amplifier (BDA) using a neutralized differential common-emitter amplifier core. On-chip transformer-based input-output baluns are included in the design for single-ended measurement and characterization. The BDA was implemented using GlobalFoundries 8HP 0.13-μm SiGe BiCMOS technology. The forward and backward gains are 10 and 8.6 dB, wit...Show More

A 28-GHz Switchless, SiGe Bidirectional Amplifier Using Neutralized Common-Emitter Differential Pair

Yunyi Gong;Moon-Kyu Cho;Ickhyun Song;John D. Cressler

IEEE Microwave and Wireless Components Letters

Year: 2018 | Volume: 28, Issue: 8 | Journal Article |

A SiGe-BiCMOS Wideband Active Bidirectional Digital Step Attenuator With Bandwidth Tuning and Equalization

Moon-Kyu Cho;Ickhyun Song;Zachary E. Fleetwood;John D. Cressler

IEEE Transactions on Microwave Theory and Techniques

Year: 2018 | Volume: 66, Issue: 8 | Journal Article |

Cited by: Papers (15)

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A 6-bit active digital step attenuator (DSA), which simultaneously achieves wide bandwidth, flat gain characteristics, and bidirectional operation, is proposed for wideband phased-array antennas. In addition, it supports bandwidth tuning and equalization function to reduce complexity and physical size of systems. The proposed circuit utilizes an active double-pole double-throw switch, which provid...Show More

A SiGe-BiCMOS Wideband Active Bidirectional Digital Step Attenuator With Bandwidth Tuning and Equalization

Moon-Kyu Cho;Ickhyun Song;Zachary E. Fleetwood;John D. Cressler

IEEE Transactions on Microwave Theory and Techniques

Year: 2018 | Volume: 66, Issue: 8 | Journal Article |

Design and Analysis of a Low Loss, Wideband Digital Step Attenuator With Minimized Amplitude and Phase Variations

Ickhyun Song;Moon-Kyu Cho;John D. Cressler

IEEE Journal of Solid-State Circuits

Year: 2018 | Volume: 53, Issue: 8 | Journal Article |

Cited by: Papers (71)

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A compact, low loss, wideband digital step attenuator (DSA) is presented. The proposed DSA utilizes amplitude/phase-compensated T-type attenuator cells, in which the locations of poles and zeros are manipulated for minimizing variations in attenuation and phase. In addition, the reduced T-type attenuator cells that eliminate series switch transistors are used to achieve low insertion loss (IL). Th...Show More

Design and Analysis of a Low Loss, Wideband Digital Step Attenuator With Minimized Amplitude and Phase Variations

Ickhyun Song;Moon-Kyu Cho;John D. Cressler

IEEE Journal of Solid-State Circuits

Year: 2018 | Volume: 53, Issue: 8 | Journal Article |

SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients

Zachary E. Fleetwood;Adrian Ildefonso;George N. Tzintzarov;Brian Wier;Uppili Raghunathan;Moon-Kyu Cho;Ickhyun Song;Mason T. Wachter;Delgermaa Nergui;Ani Khachatrian;Jeffrey H. Warner;Patrick McMarr;Harold Hughes;Enxia Zhang;Dale McMorrow;Pauline Paki;Alvin Joseph;Vibhor Jain;John D. Cressler

IEEE Transactions on Nuclear Science

Year: 2018 | Volume: 65, Issue: 1 | Journal Article |

Cited by: Papers (9)

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The doping profile of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) is modified to enhance inverse-mode (IM) device operation. Device improvements are presented in this paper, along with the impact the alterations have on the radiation effects response. This investigation represents the first published occurrence of a radiation-hardening-by-process approach in a SiGe HBT technol...Show More

SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients

Zachary E. Fleetwood;Adrian Ildefonso;George N. Tzintzarov;Brian Wier;Uppili Raghunathan;Moon-Kyu Cho;Ickhyun Song;Mason T. Wachter;Delgermaa Nergui;Ani Khachatrian;Jeffrey H. Warner;Patrick McMarr;Harold Hughes;Enxia Zhang;Dale McMorrow;Pauline Paki;Alvin Joseph;Vibhor Jain;John D. Cressler

IEEE Transactions on Nuclear Science

Year: 2018 | Volume: 65, Issue: 1 | Journal Article |

p-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform

Ickhyun Song;Moon-Kyu Cho;Zachary E. Fleetwood;Yunyi Gong;Spyridon Pavlidis;Stephen P. Buchner;Dale McMorrow;Pauline Paki;Mehmet Kaynak;John. D. Cressler

IEEE Transactions on Nuclear Science

Year: 2018 | Volume: 65, Issue: 1 | Journal Article |

Cited by: Papers (6)

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The benefits of using p-n-p silicon-germanium (SiGe) heterojuction bipolar transistors (HBTs) in radio frequency (RF) circuits for the mitigation of single-event transients (SETs) have been investigated. As a representative circuit example, p-n-p SiGe-HBT RF single-pole single-throw (SPST) switches have been designed in a complementary SiGe BiCMOS platform. The fabricated p-n-p-based RF switches p...Show More

p-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform

Ickhyun Song;Moon-Kyu Cho;Zachary E. Fleetwood;Yunyi Gong;Spyridon Pavlidis;Stephen P. Buchner;Dale McMorrow;Pauline Paki;Mehmet Kaynak;John. D. Cressler

IEEE Transactions on Nuclear Science

Year: 2018 | Volume: 65, Issue: 1 | Journal Article |

An Electrostatic Discharge Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology

Moon-Kyu Cho;Ickhyun Song;Spyridon Pavlidis;Zachary E. Fleetwood;Stephen P. Buchner;Dale McMorrow;Pauline Paki;John D. Cressler

IEEE Transactions on Nuclear Science

Year: 2018 | Volume: 65, Issue: 1 | Journal Article |

Cited by: Papers (5)

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The impact of electrostatic discharge (ESD) protection circuits on the single-event transients (SETs) of RF building blocks in a 130-nm SiGe BiCMOS (8HP) platform is investigated. For proof-of-concept that SET mitigation can be accomplished through the use of an ESD protection circuit, a single-pole single-throw (SPST) switch was implemented using triple-well nFETs. For substrate noise coupling su...Show More

An Electrostatic Discharge Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology

Moon-Kyu Cho;Ickhyun Song;Spyridon Pavlidis;Zachary E. Fleetwood;Stephen P. Buchner;Dale McMorrow;Pauline Paki;John D. Cressler

IEEE Transactions on Nuclear Science

Year: 2018 | Volume: 65, Issue: 1 | Journal Article |

Modeling Single-Event Transient Propagation in a SiGe BiCMOS Direct-Conversion Receiver

Adrian Ildefonso;Ickhyun Song;George N. Tzintzarov;Zachary E. Fleetwood;Nelson E. Lourenco;Mason T. Wachter;John D. Cressler

IEEE Transactions on Nuclear Science

Year: 2017 | Volume: 64, Issue: 8 | Journal Article |

Cited by: Papers (11)

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The propagation of single-event transient (SET) signals in a silicon-germanium direct-conversion receiver carrying modulated data is explored. A theoretical analysis of transient propagation, verified by simulation, is presented. A new methodology to characterize and quantify the impact of SETs in communication systems carrying modulated data is proposed. The proposed methodology uses a pulsed rad...Show More

Modeling Single-Event Transient Propagation in a SiGe BiCMOS Direct-Conversion Receiver

Adrian Ildefonso;Ickhyun Song;George N. Tzintzarov;Zachary E. Fleetwood;Nelson E. Lourenco;Mason T. Wachter;John D. Cressler

IEEE Transactions on Nuclear Science

Year: 2017 | Volume: 64, Issue: 8 | Journal Article |

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