Akhil Sudarsanan - IEEE Xplore Author Profile

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The effect of interface trap variability (ITV) on horizontally stacked nanosheet FET (NSHFET) has been explored using TCAD based 3-D quantum corrected Drift-Diffusion simulation framework for sub-3 nm technology node. It is revealed that 3-stacked NSHFET shows 9.09% lesser VT variation compared to 3-stacked nanowire FET (NWFET) due to combined ITV sources such as charge neutrality level (CNL), sin...Show More
In this article, the impact of random fluctuation sources, such as metal gate granularity (MGG), line edge roughness (LER), and random dopant fluctuations (RDFs), are numerically studied for U-shaped n-channel fully depleted silicon on insulator (FDSOI) MOSFET (U-SOIFET) over conventional n-channel FDSOI MOSFET (C-SOIFET) for 7-nm technology node. This article reports that improved short-channel e...Show More
In this paper, work function variability (WFV) of stacked nanosheet FET (NSHFET) has been numerically investigated using 3-D quantum corrected Drift-Diffusion simulation framework for sub-7nm high performance logic applications. The WFV induced NSHFET performance is investigated using RGG (ratio of average grain size to gate area) plot for fair comparison against nanowire FET (NWFET) as the effect...Show More
We report the numerical simulation study on the characteristic variability of 10-nm SOI Multi Fin n-FET due to the impact of random fluctuation sources such as gate work function variability induced by metal gate granularity (MGG) and Fin line edge roughness (LER) using quantum corrected 3-D drift diffusion (DD) simulation framework. The statistical simulation predictions reveal that for ultra dow...Show More
Device self-heating effects (SHEs) in nonplanar Si MOS transistors such as fin field-effect transistors (FinFETs) and nanowire FETs have become a serious issue in designing well-tempered CMOS devices for future logic nodes. The device thermal contact resistances are strongly influenced by both the ambient temperature and within device lattice temperature. The ambient heat energy coupling through t...Show More