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Dong Ding - IEEE Xplore Author Profile

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A methodology is proposed for extracting a broadband small-signal model of InP DHBT from 0.2 to 220 GHz, aiming specifically at terahertz (THz) applications. The intrinsic part adopts a π topology, directly extracted from the de-embedded data below 67 GHz. The high frequency data is obtained after on-wafer TRL calibration. Considering the partial interconnection coupling in the device test data af...Show More
We present a 260 GHz – 340 GHz power amplifier in 0.25 um InP DHBTs. This amplifier is formed by 6-stage commom-emitter DHBTs and 3-layer metal process of passive circuits fabrication. The power amplifier exhibits a >12dB gain from 260GHz-340GHz, and a 8.8-dBm output power at 338 GHz. This power amplifier occupies a 1.82 × 0.78 mm2 including padsShow More
In this article, an on-chip aperture antenna in indium phosphide (InP) technology is proposed for terahertz transceivers. Terahertz on-chip antennas are often directly connected to the amplifier, and the bulky substrate of active circuits affects the impedance and radiation characteristics of the antenna. In order to obtain robust antenna performances against the uncertain chip size of the active ...Show More
A broadband E-band driver amplifier fabricated in 0.1 μm GaAs pHEMT technology is proposed in this paper. The amplifier is composed of three common-source stages. To realize the wide bandwidth, high order matching networks are utilized, and the center frequency of each stage is separated. Measure-ments show a peak small-signal gain of 18.3 dB at 66 GHz with a relative 3-dB bandwidth of 42.5% (61–9...Show More
This paper mainly introduces a method to build a nonlinear model of MHEMT, mainly to solve the problem of short channel effect of MHEMT. In order to accurately characterize the active devices below 110GHz, a LRRM calibration kit was designed to be implemented on the same substrate as the devices. According to the improved Angelov model method, the equivalent circuit of MHEMT device is extracted. E...Show More
This paper briefly introduces the fabrication of GaN FinFET devices and its DC and microwave characteristics. GaN FinFET exhibits better linearity, higher current density and power density. A large signal equivalent circuit modeling for GaN FinFETs is presented in this paper. The improved Rs and current equation are shown in the paper. The simulation results of DC and S parameter models are compar...Show More
GaAs terahertz schottky barrier diode SBD has been a major technology in terahertz wave multiplexing, mixing and direct detection for decades, due to its high mobility and low capacity. In this paper, T-anode GaAs terahertz SBD was presented with its $C_{\mathrm{j}0}$ scaled into sub-fF range. Scalling C-V measurement showed $C_{\mathrm{j}0}$ without parasitic capacity reached 0.476fF for the $0.5...Show More
This article presents a 250-GHz SiGe amplifier composed of three differential cascode stages in a 0.13-μm SiGe BiCMOS technology (fT/fMAX = 300/500 GHz). The Marchand balun is utilized to implement single-ended to differential signal transformation for its superior performance over the transformer-based balun at sub-THz frequencies, which has been investigated and verified through electromagnetic ...Show More
In this paper, we present the first millimeter-wave GaN HEMT monolithic integrated circuit (MMIC) amplifier with an operating frequency at 220 GHz. This MMIC has a small-signal gain well above 11 dB at 222 GHz. Moreover, the use of gallium nitride technology allows for achieving state-of-the-art saturated output power, up to 14dBm at 222 GHz. To our knowledge, the measured gain and output power le...Show More
In this paper, an on chip band-pass filter (BPF) is designed and fabricated in a 0.5 μm InP DHBT technology for terahertz applications. The designed resonator consists of two curved broadside-coupled meander-lines(CBCMLR) in opposite directions. A defected-ground structure (DGS) is used for a higher attenuation at the high-frequency band. Besides, an electromagnetic simulation method is proposed t...Show More
In this paper, we present a novel gain-enhanced sub-harmonic mixer based on 0.5-μm emitter width InGaAs/InP double heterojunction bipolar transistors (InP DHBTs). The proposed mixer consists of a transconductance stage and a gain-enhanced stage. A common-emitter transistor is used in the first stage to realize the sub-harmonic mixing while another common-emitter transistor is used in the second st...Show More
In this letter, we present a research on the application possibility of the integrated planar spatial (IPS) combiner in terahertz monolithic integrated circuits (TMICs). The IPS combiner has several attractive characters, such as low loss and good port-to-port isolation. Measured insertion loss of the back-to-back four-way IPS combiner prototype is less than 1.65 dB from 220 to 260 GHz. Then, the ...Show More
We present a novel coplanar waveguide (CPW) - waveguide transition structure for the package of terahertz (THz) monolithic microwave integrated circuits (MMICs). For the first time, flip-assembled CPW manufactured with quartz substrate is used to replace gold wire bonding to improve the performance of MMIC package in THz module. This no-wire transition structure significantly improves the transiti...Show More
In this paper a measurement method for InP-Based HBT devices to 220GHz is presented. S-parameters are deembedded using TRL calibration structures (70-220GHz) fabricated on-wafer. The results shown in this paper are characterized at 75-110GHz and 140-220GHz. Good agreement between the low and high frequency measurement is achieved demonstrating the capability of TRL calibration in S-parameters extr...Show More
A broadband model for Ground-Signal-Ground (GSG) pad in InP HBT technology is presented. The inductive parasitics of the structure is considered. A method to analytically extract the model parameters is proposed. For model extraction convenience, the pad is designed as structure of one-side. The model renders excellent agreement with the measured and simulated data over 1 to 325 GHz, for a pad str...Show More
In this paper, a new 3-D electromagnetic (EM) simulation approach for heterojunction bipolar transistor (HBT) parameter extraction in terahertz band is presented. We introduce an inter-electrode impedance equivalent-circuit model with the concept of dispersive parameters and a more rigorous 3-D EM simulation parameter extraction method to avoid serious discrepancies between the simulated EM field ...Show More
In this paper, a frequency domain, nonlinear, behavioral model for RF power transistors, based on an artificial neural network (ANN), is proposed and validated. The model is identified using the back-propagation algorithm from the incident and scattered wave data of the RF transistor. The model has been extracted and validated on Cree GaN HEMT device. Both simulation and measurement examples are p...Show More
This paper presents an accurate quasi-physical compact large-signal model for GaN high electron mobility transistors (HEMTs). The drain current Ids expression is acquired by combining the zone division method and the surface potential theory. The proposed Ids model only contains 19 empirical parameters, with self-heating, ambient temperature and trapping effects considered. The self-heating effect...Show More
In this letter, a cascade-based de-embedding method with thru-halfthru-short structures is presented for millimeter-wave on-wafer device characterization. Distributed effects of interconnect, discontinuity between pad and interconnect, and transistor-access-via-holes are all well considered using only three dummy structures, and forward coupling is also investigated. By providing both extracted ju...Show More
High power performance AlGaN/GaN HEMT devices with 0.1 μm Y-shaped gates encapsulated with low-κ BCB are reported. The maximum drain current and transconductance of the device are 1.15 A/mm and 350 mS/mm, respectively. The two-terminal breakdown voltage exceeds 30 V, which ensures a high operating voltage. Using the novel 0.1 μm low parasitic Y-shaped gate associated with AlGaN back barrier, a fT ...Show More
In this paper a measurement method for InP-Based HBT devices to 220GHz is presented. S-parameters are de-embedded using TRL calibration structures (70-220GHz) fabricated on-wafer. The results shown in this paper are characterized at 75-110GHz and 140-220GHz. Good agreement between the low and high frequency measurement is achieved demonstrating the capability of TRL calibration in S-parameters ext...Show More
A static divide-by-2 frequency divider based on InP/InGaAs DHBT technology is presented. On chip thin film resistor and capacitor were integrated. Two levels of interconnect were developed. Composite collector design and 0.5μm emitter width enable the static frequency divider operated at a frequency over 100GHz.Show More
In this paper, an improved InP/InGaAs DHBT large-signal model based on the AgilentHBT model is reported. The collector current model is modified for the consideration of hetero-junction effect, and especially, a dispersion current item is put forward and incorporated into the equivalent circuit. The proposed model is implemented by the use of symbolically-defined devices (SDD) in ADS software. The...Show More
This paper presents the development of 110GHz monolithic low-noise amplifier (LNA) using 100 nm In0.52Al0.48As/In0.53Ga0.47As GaAs metamorphic high electron mobility transistors (MHEMTs) technology. The MHEMT technology features an extrinsic fT of 220GHz and an extrinsic transconduction gm,max of 940mS/mm. The LNA is consisted by 4 stages 2×20um gate width transistors. The amplifier demonstrates a...Show More
In this paper, a monolithic W-band Power amplifier (PA) is presented by using 1μm InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) technology. The PA is consisted by 2 stages 2×1μm and 3 stages 4×1μm emitter width transistors. The total circuit shows small signal gain is above 15dB from 90GHz to 96GHz, and the simulated saturation output power reaches 18.5dBm@94GHz. The chip area is ...Show More