Chun Yang - IEEE Xplore Author Profile

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This article presents a compact four-way six-stage power amplifier (PA) operating in the 90–180 GHz range with 15–18 dBm saturated output power ( $P_{\text{sat}}$ ) in 28-nm bulk CMOS. A compact neutralized amplifier core utilizing a modified MOS capacitor is proposed, achieving a fourfold size reduction. The output network features a three-conductor self-shielding load-open (SSLO) balun-based dua...Show More
This paper presents a D-band on-off keying (OOK) transmitter fabricated in 28-nm CMOS process. A current-controlled OOK modulator with always-off cancellation technique is proposed to enhance the data rate and the on-off ratio. The transmitter exhibits an output power exceeding 10 dBm and an on-off ratio of 40 dB. Its 3-dB output power bandwidth is from 110 to 170 GHz, covering the full D band to ...Show More
The THz frequency band offers an exceptionally wide bandwidth, making it ideal for ultra-high-data-rate communication using simple modulation schemes like amplitude-shift-keying (ASK) [1–5]. By avoiding complex modulation schemes, we can simplify the THz system architecture, reducing the complexity of analog mixed-signal processing components, including high-speed multi-bit ADCs and DACs, which te...Show More
In recent years, there has been a growing interest on the terahertz (THz) frequency to enhance communication rate, particularly in 100–200 GHz band. Within this research domain, silicon-based circuits have garnered significant attention due to their low cost and high integration. Additionally, Simple modulation scheme, such as amplitude shift keying (ASK), have also gain considerable traction owin...Show More
This paper presents a voltage controlled oscillator operating in the W-band with low phase noise and high output power. The proposed VCO adopts a differential common collector structure where the output is not directly connected to the resonant circuit, so the effect of capacitance at the output node on the resonant circuit can be disregarded. A combination of tail current noise optimization and r...Show More
A broadband E-band driver amplifier fabricated in 0.1 μm GaAs pHEMT technology is proposed in this paper. The amplifier is composed of three common-source stages. To realize the wide bandwidth, high order matching networks are utilized, and the center frequency of each stage is separated. Measure-ments show a peak small-signal gain of 18.3 dB at 66 GHz with a relative 3-dB bandwidth of 42.5% (61–9...Show More