Zhe Chen - IEEE Xplore Author Profile
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Zhe Chen

Publications
10
Citations
116
Publications by Year
20162020
Co-Authors:
Show All Co-Authors (22)
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Zhe Chen

Affiliation

E.E. department
IC Group
Eindhoven Unviersity of Technology, Eindhoven, the Netherlands

Publication Topics

Biography

Zhe Chen (z.chen@tue.nl) is a Ph.D. student in the Integrated Circuits Group, Eindhoven University of Technology, The Netherlands. His research focuses on wideband millimeter-wave low-noise amplifiers in silicon-based semiconductor technologies.(Based on document published on 24 February 2019).
Publications
10
Citations
116
Publications by Year
20162020
Co-Authors:
Show All Co-Authors (22)
Author's Published Works

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Co-Design of a Ka-Band High-Gain Low-Noise Amplifier and Antenna-in-Package

Zhe Chen;Hao Gao;Dusan Milosevic;Peter Baltus

2020 IEEE Asia-Pacific Microwave Conference (APMC)
Year: 2020 | Conference Paper |
This paper presents a co-design of Ka-band high-gain low-noise amplifier (LNA) integrated circuit (IC) and antenna-in-package for the 5G applications. In this high-gain Ka-band LNA, a dual-LC tank matching technique is applied at the input to achieve wide-band simultaneous noise and power matching. This LNA IC is implemented in a 0.25 $\mu$m SiGe BiCMOS technology, and the antenna is implemented o...Show More

Co-Design of a Ka-Band High-Gain Low-Noise Amplifier and Antenna-in-Package

Zhe Chen;Hao Gao;Dusan Milosevic;Peter Baltus

Year: 2020 | Conference Paper |

30-GHz Co-designed Low-Noise Amplifier and Antenna-on-Chip for Wireless Applications

Zhe Chen;Qiang Liu;Bart Smolders;Peter Baltus;Hao Gao

2019 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
Year: 2019 | Conference Paper |
Cited by: Papers (8)
This paper presents a 30-GHz co-design of a 28-dB high-gain low-noise amplifier (LNA) and a 54% high-efficiency monopole antenna-on-chip for 5G wireless applications. The LNA design is based on a two-stage differential cascode structure with inductive degeneration. The antenna design is a modified monopole structure to maximize the radiation efficiency. Both parts are integrated directly on the sa...Show More

30-GHz Co-designed Low-Noise Amplifier and Antenna-on-Chip for Wireless Applications

Zhe Chen;Qiang Liu;Bart Smolders;Peter Baltus;Hao Gao

Year: 2019 | Conference Paper |

A 1.2-2.8 GHz Tunable Low-noise Amplifier with 0.8-1.6 dB Noise Figure

Hao Gao;Zhe Song;Zhe Chen;Domine M. W. Leenaerts;Peter G. M. Baltus

2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
Year: 2019 | Conference Paper |
Cited by: Papers (3)
This paper presents a tunable wideband low-noise amplifier (LNA) covering 1.2 to 2.8 GHz and is realized in a 0.25 µm SiGe:C BiCMOS technology. The LNA covers 80% fractional bandwidth in 16 states using a dual-LC tanks input broadband noise matching technique and a switch capacitor output frequency selection network. The measured minimal noise figure (NF) is 0.8 dB at 1.4 and 1.8 GHz, and the aver...Show More

A 1.2-2.8 GHz Tunable Low-noise Amplifier with 0.8-1.6 dB Noise Figure

Hao Gao;Zhe Song;Zhe Chen;Domine M. W. Leenaerts;Peter G. M. Baltus

Year: 2019 | Conference Paper |

Co-Design of a Ka-Band High-Gain Low-Noise Amplifier and Chip-on-Board Packaging

Zhe Chen;Dusan Milosevic;Peter Baltus;Hao Gao

2019 IEEE MTT-S International Wireless Symposium (IWS)
Year: 2019 | Conference Paper |
Cited by: Papers (4)
This paper presents a co-design of Ka-band high-gain low-noise amplifier (LNA) integrated circuit (IC) and chip-on-board packaging for the 5G applications. In this high-gain Ka-band LNA, a dual-LC tank matching technique is applied at the input to achieve wide-band simultaneous noise and power matching. This LNA IC is implemented in a 0.25 µm SiGe BiC-MOS technology, and it is packaged in a chip-o...Show More

Co-Design of a Ka-Band High-Gain Low-Noise Amplifier and Chip-on-Board Packaging

Zhe Chen;Dusan Milosevic;Peter Baltus;Hao Gao

Year: 2019 | Conference Paper |

Fully Integrated Tunable Wideband True Time Delay for Wireless Sensor Networks

Carlos A. M. Costa;Chu Wang;Kuangyuan Ying;Zhe Chen;Miguel Dhaens;Hao Gao;Peter Baltus

2019 IEEE International Symposium on Circuits and Systems (ISCAS)
Year: 2019 | Conference Paper |
Cited by: Papers (2)
High Performance Wireless Sensor Networks (HP-WSN) for critical, low latency applications such as traffic control, industrial process control, smart structures and smart vehicles has been a fast-growing field. Nevertheless, efforts towards new systems and circuit architectures to enable real-time, predictable and reliable HP-WSN have been limited, specially for reliable, low latency wireless links...Show More

Fully Integrated Tunable Wideband True Time Delay for Wireless Sensor Networks

Carlos A. M. Costa;Chu Wang;Kuangyuan Ying;Zhe Chen;Miguel Dhaens;Hao Gao;Peter Baltus

Year: 2019 | Conference Paper |

Building 5G Millimeter-Wave Wireless Infrastructure: Wide-Scan Focal-Plane Arrays With Broadband Optical Beamforming

A Bart Smolders;Aleksei Dubok;Netsanet M Tessema;Zhe Chen;Ali Al Rawi;Ulf Johannsen;Thomas Bressner;Dusan Milosevic;Hao Gao;Eduward Tangdiongga;Giampiero Gerini;Peter G M Baltus;Marcel Geurts;A M J Ton Koonen

IEEE Antennas and Propagation Magazine
Year: 2019 | Volume: 61, Issue: 2 | Magazine Article |
Cited by: Papers (25)
A wide-scan and broadband focal-plane array (FPA) concept is introduced in this article, which provides high antenna gain and effective isotropic radiated power (EIRP) with electronic beamsteering within a relatively large field of view (FoV), up to +/-20°. The antenna uses a bifocal double-reflector concept that optimizes the illumination of the focal-plane region. In this way, we have reduced th...Show More

Building 5G Millimeter-Wave Wireless Infrastructure: Wide-Scan Focal-Plane Arrays With Broadband Optical Beamforming

A Bart Smolders;Aleksei Dubok;Netsanet M Tessema;Zhe Chen;Ali Al Rawi;Ulf Johannsen;Thomas Bressner;Dusan Milosevic;Hao Gao;Eduward Tangdiongga;Giampiero Gerini;Peter G M Baltus;Marcel Geurts;A M J Ton Koonen

Year: 2019 | Volume: 61, Issue: 2 | Magazine Article |

A Design Approach for SiGe Low-Noise Amplifiers Using Wideband Input Matching

Zhe Chen;Hao Gao;Peter G. M. Baltus

2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)
Year: 2018 | Conference Paper |
Cited by: Papers (2)
This paper investigates the feasibility of wideband low-noise amplifiers in bipolar silicon-germanium IC technology. Three different design techniques are compared and the most promising one is analyzed in detail and examined on a design example. We propose a design approach based on an LC-ladder structure as the input matching network. Used in combination with the cascode structure amplifier with...Show More

A Design Approach for SiGe Low-Noise Amplifiers Using Wideband Input Matching

Zhe Chen;Hao Gao;Peter G. M. Baltus

Year: 2018 | Conference Paper |

A 29–37 GHz BiCMOS Low-Noise Amplifier with 28.5 dB Peak Gain and 3.1-4.1 dB NF

Zhe Chen;Hao Gao;Domine Leenaerts;Dusan Milosevic;Peter Baltus

2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
Year: 2018 | Conference Paper |
Cited by: Papers (52)
This paper presents a 28.5 dB high-gain Ka-band low-noise amplifier (LNA) in a 0.25 µm SiGe:C BiCMOS technology. To achieve wide band (fractional bandwidth > 25%) simultaneous noise and power matching with compact size, a 3-winding transformer based dualtank matching technique is proposed and implemented for the input matching. The LNA provides 28.5 dB peak gain at 32 GHz with a 3-dB gain bandwidt...Show More

A 29–37 GHz BiCMOS Low-Noise Amplifier with 28.5 dB Peak Gain and 3.1-4.1 dB NF

Zhe Chen;Hao Gao;Domine Leenaerts;Dusan Milosevic;Peter Baltus

Year: 2018 | Conference Paper |

A 16–43 GHz low-noise amplifer with 2.5–4.0 dB noise figure

Zhe Chen;Hao Gao;Domine M.W. Leenaerts;Dusan Milosevic;Peter G.M. Baltus

2016 IEEE Asian Solid-State Circuits Conference (A-SSCC)
Year: 2016 | Conference Paper |
Cited by: Papers (17)
This paper presents an ultra-broadband low-noise amplifier (LNA) operating from 16 to 43 GHz in a 0.25 pm SiGe:C BiCMOS technology. Across this band, the LNA achieves simultaneous low-noise performance (2.5–4.0 dB) and power matching (S11 < −10 dB) using dual-LC tank matching. The measured minimal noise figure is 2.5 dB at 26 GHz with an average value of 3.25 (±0.75) dB from 16 to 44 GHz. The best...Show More

A 16–43 GHz low-noise amplifer with 2.5–4.0 dB noise figure

Zhe Chen;Hao Gao;Domine M.W. Leenaerts;Dusan Milosevic;Peter G.M. Baltus

Year: 2016 | Conference Paper |

Poster: Design consideration of 60 GHz low power low-noise amplifier in 65 nm CMOS

Zhe Chen;Hao Gao;Rainier van Dommele;Dusan Milosevic;Peter G.M. Baltus

2016 Symposium on Communications and Vehicular Technologies (SCVT)
Year: 2016 | Conference Paper |
Cited by: Papers (3)
This paper presents a design of fully differential low-noise amplifier (LNA) used for 60 GHz low power wireless communication in 65 nm CMOS technology. The proposed LNA consists of an input stage employing capacitive cross-coupling technique and an gain stage using current-reuse techniques. The simulated amplifier achieves both input and output matching better than −15dB, a forward gain of 15 dB, ...Show More

Poster: Design consideration of 60 GHz low power low-noise amplifier in 65 nm CMOS

Zhe Chen;Hao Gao;Rainier van Dommele;Dusan Milosevic;Peter G.M. Baltus

Year: 2016 | Conference Paper |

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