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Jaesung Jo - IEEE Xplore Author Profile
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Jaesung Jo

Publications
8
Citations
261
Publications by Year
20142024
Co-Authors:
Show All Co-Authors (21)
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Jaesung Jo

Affiliation

Electrical Engineering and Computer Science Department
University of Michigan
Ann Arbor, MI, USA

Publication Topics

Biography

Jaesung Jo received the B.S. and M.S. degrees in electrical and computer engineering from the University of Seoul, Seoul, South Korea, in 2015 and 2017, respectively.,His current research interests include advanced complementary metal–oxide–semiconductor device designs and energy efficient electronics.(Based on document published on 30 October 2017).
Publications
8
Citations
261
Publications by Year
20142024
Co-Authors:
Show All Co-Authors (21)
Author's Published Works

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Effect of Metal Capping Layer in Achieving Record High p-Type SnO Thin Film Transistor Mobility

Kishwar Mashooq;Jaesung Jo;Rebecca L. Peterson

IEEE Transactions on Electron Devices
Year: 2024 | Volume: 71, Issue: 1 | Journal Article |
Cited by: Papers (2)
Recently p-type tin monoxide (SnO) thin film transistors (TFTs) have drawn significant interest for use in all-oxide CMOS circuits for back-end-of-line (BEOL) integration with Si and flexible electronics. However, most SnO TFTs demonstrated so far have a limited field effect mobility and poor ON– OFF current ratio. Here, we used a floating metal cap layer to create a bilayer TFT structure and boos...Show More

Effect of Metal Capping Layer in Achieving Record High p-Type SnO Thin Film Transistor Mobility

Kishwar Mashooq;Jaesung Jo;Rebecca L. Peterson

Year: 2024 | Volume: 71, Issue: 1 | Journal Article |

Extraction of SnO Subbandgap Defect Density by Numerical Modeling of p-Type TFTs

Kishwar Mashooq;Jaesung Jo;Rebecca L. Peterson

IEEE Transactions on Electron Devices
Year: 2022 | Volume: 69, Issue: 5 | Journal Article |
Cited by: Papers (5)
Recently, p-type tin monoxide (SnO) thin-film transistors (TFTs) have gained interest for all-oxide complementary metal–oxide semiconductor (CMOS) circuits for flexible electronics and back-end-of-line integration with Si. However, most SnO TFTs demonstrated so far exhibit a low on– off-current ratio and limited field effect mobility. To understand and improve SnO TFT performance, it is necessary ...Show More

Extraction of SnO Subbandgap Defect Density by Numerical Modeling of p-Type TFTs

Kishwar Mashooq;Jaesung Jo;Rebecca L. Peterson

Year: 2022 | Volume: 69, Issue: 5 | Journal Article |

Causes of the Difference Between Hall Mobility and Field-Effect Mobility for p-Type RF Sputtered Cu₂O Thin-Film Transistors

Jaesung Jo;Julia D. Lenef;Kishwar Mashooq;Orlando Trejo;Neil P. Dasgupta;Rebecca L. Peterson

IEEE Transactions on Electron Devices
Year: 2020 | Volume: 67, Issue: 12 | Journal Article |
Cited by: Papers (23)
The high Hall hole mobility (μHall) of cuprous oxide (Cu2O) has caused great interest in using this semiconductor for p-type devices in a future complementary metal-oxide-semiconductor (CMOS) thin-film transistor (TFT) technology. However, in most studies, the field-effect mobility (μFE) achieved was reported to be much lower than μHall. To understand the large gap between μHall and μFE, in this w...Show More

Causes of the Difference Between Hall Mobility and Field-Effect Mobility for p-Type RF Sputtered Cu₂O Thin-Film Transistors

Jaesung Jo;Julia D. Lenef;Kishwar Mashooq;Orlando Trejo;Neil P. Dasgupta;Rebecca L. Peterson

Year: 2020 | Volume: 67, Issue: 12 | Journal Article |

Transconductance Amplification by the Negative Capacitance in Ferroelectric-Gated P3HT Thin-Film Transistor

Jaesung Jo;Min Gee Kim;Hyunjae Lee;Hyunwoo Choi;Changhwan Shin

IEEE Transactions on Electron Devices
Year: 2017 | Volume: 64, Issue: 12 | Journal Article |
Cited by: Papers (10)
With lots of interest in negative capacitance field-effect transistors for ultralow-power complementary metal-oxide-semiconductor technology, negative capacitance thin-film transistors (NCTFTs) have also received much attention. Although previous studies on NCTFTs were done, the NC effect in organic-based TFTs was not studied yet. In this paper, P(VDF-TrFE) ferroelectric-gated P3HT semiconductor c...Show More

Transconductance Amplification by the Negative Capacitance in Ferroelectric-Gated P3HT Thin-Film Transistor

Jaesung Jo;Min Gee Kim;Hyunjae Lee;Hyunwoo Choi;Changhwan Shin

Year: 2017 | Volume: 64, Issue: 12 | Journal Article |

Layout engineering to suppress hysteresis of negative capacitance FinFET

Eunah Ko;Jaesung Jo;Changhwan Shin;Bich-Yen Nguyen

2017 IEEE International Conference on IC Design and Technology (ICICDT)
Year: 2017 | Conference Paper |
Negative capacitance (NC), which arises from two energy minima of ferroelectric material, is proposed as one of the solutions for the next generation CMOS technology. However, the side-effect (i.e., hysteresis in current-vs.-voltage characteristic) of NC FinFET should be minimized, especially for being adopted as CMOS logic devices. If the capacitance matching between the ferroelectric capacitor a...Show More

Layout engineering to suppress hysteresis of negative capacitance FinFET

Eunah Ko;Jaesung Jo;Changhwan Shin;Bich-Yen Nguyen

Year: 2017 | Conference Paper |

Capacitance matching effects in negative capacitnace field effect transistor

Jaesung Jo;Asif Islam Khan;Karam Cho;Sangheon Oh;Sayeef Salahuddin;Changhwan Shin

2016 IEEE Silicon Nanoelectronics Workshop (SNW)
Year: 2016 | Conference Paper |
Cited by: Papers (6)
Negative capacitance effects are experimentally observed in p-type bulk MOSFET with PZT ferroelectric capacitor. The average subthreshold slope of 45 mV/decade at 300 K is experimentally demonstrated with 105 on-/off-current ratio and minimal hysteresis window of 0.2 V, albeit at relatively high drain voltage. Furthermore, a change in the nature of hysteresis was observed with drain voltage, which...Show More

Capacitance matching effects in negative capacitnace field effect transistor

Jaesung Jo;Asif Islam Khan;Karam Cho;Sangheon Oh;Sayeef Salahuddin;Changhwan Shin

Year: 2016 | Conference Paper |

Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching

Jaesung Jo;Changhwan Shin

IEEE Electron Device Letters
Year: 2016 | Volume: 37, Issue: 3 | Journal Article |
Cited by: Papers (181)
We demonstrate a nearly hysteresis-free sub60-mV/decade subthreshold swing (SS) operation in a p-type bulk metal-oxide-semiconductor field-effect transistor externally connected to a ferroelectric capacitor. The SS <;60 mV/decade is observed over three orders of magnitude (i.e., 10 pA/μm~10 nA/μm of drain current) and at large drain current levels. However, the extent of hysteresis is found to be ...Show More

Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching

Jaesung Jo;Changhwan Shin

Year: 2016 | Volume: 37, Issue: 3 | Journal Article |

Specific Contact Resistivity Reduction Through Ar Plasma-Treated TiO2−x Interfacial Layer to Metal/Ge Contact

Gwang-Sik Kim;Jeong-Kyu Kim;Seung-Hwan Kim;Jaesung Jo;Changhwan Shin;Jin-Hong Park;Krishna C. Saraswat;Hyun-Yong Yu

IEEE Electron Device Letters
Year: 2014 | Volume: 35, Issue: 11 | Journal Article |
Cited by: Papers (34)
We demonstrate contact resistivity reduction by inserting an Ar plasma-treated TiO2-x heavily doped interfacial layer to metal/semiconductor contact to overcome a Fermi-level pinning problem on germanium (Ge). A specific contact resistivity of 3.16 × 10-3Ω · cm2 on moderately doped n-type Ge substrate (6 × 1016cm-3) was achieved, exhibiting ×584 reduction from Ti/Ge structure, and ×11 reduction fr...Show More

Specific Contact Resistivity Reduction Through Ar Plasma-Treated TiO2−x Interfacial Layer to Metal/Ge Contact

Gwang-Sik Kim;Jeong-Kyu Kim;Seung-Hwan Kim;Jaesung Jo;Changhwan Shin;Jin-Hong Park;Krishna C. Saraswat;Hyun-Yong Yu

Year: 2014 | Volume: 35, Issue: 11 | Journal Article |

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