1. Introduction
Semiconductor lasers have been widely used in various areas, such as optical communication, optical sensing and so on [1, 2]. Surface emitting (SE) semiconductor laser has attracted great attention due to the compatibility with on-wafer testing and easy formation of two-dimension arrays, which can achieve maximize cost reduction and mass production [3]. One type of SE laser is vertical cavity surface-emitting laser (VCSEL), which have high modulation rate but faces difficulties at long wavelengths applications in optical communication and complexed epitaxial structure [4, 5]. Besides VCSEL, grating coupled surface-emitting semiconductor distributed feedback (SEDFB) laser [6, 7] not only can achieve single mode surface emission, but also obtain widespread applications in long wavelength. More importantly, high output power, high modulation rates are of great importance for practical application.