Abstract:
We have achieved the first 25-Gb/s operation for a metamorphic laser with a high characteristic temperature (T0=187 K) at 1.3 μm on a GaAs substrate using a thin metamorp...Show MoreMetadata
Abstract:
We have achieved the first 25-Gb/s operation for a metamorphic laser with a high characteristic temperature (T0=187 K) at 1.3 μm on a GaAs substrate using a thin metamorphic buffer to suppress wafer curvature.
Published in: 2014 International Semiconductor Laser Conference
Date of Conference: 07-10 September 2014
Date Added to IEEE Xplore: 18 December 2014
Electronic ISBN:978-1-4799-5722-4
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