Abstract:
We have achieved the first 25-Gb/s operation for a metamorphic laser with a high characteristic temperature (T0=187 K) at 1.3 μm on a GaAs substrate using a thin metamorp...Show MoreMetadata
Abstract:
We have achieved the first 25-Gb/s operation for a metamorphic laser with a high characteristic temperature (T0=187 K) at 1.3 μm on a GaAs substrate using a thin metamorphic buffer to suppress wafer curvature.
Published in: 2014 International Semiconductor Laser Conference
Date of Conference: 07-10 September 2014
Date Added to IEEE Xplore: 18 December 2014
Electronic ISBN:978-1-4799-5722-4
ISSN Information:
NTT Corporation, NTT Photonics Laboratories, Atsugi, Kanagawa, Japan
NTT Corporation, NTT Photonics Laboratories, Atsugi, Kanagawa, Japan
NTT Corporation, NTT Photonics Laboratories, Atsugi, Kanagawa, Japan
NTT Corporation, NTT Photonics Laboratories, Atsugi, Kanagawa, Japan
Contents NTT Corporation, NTT Photonics Laboratories, Atsugi, Kanagawa, Japan
NTT Corporation, NTT Photonics Laboratories, Atsugi, Kanagawa, Japan
NTT Corporation, NTT Photonics Laboratories, Atsugi, Kanagawa, Japan
NTT Corporation, NTT Photonics Laboratories, Atsugi, Kanagawa, Japan
