Showing 1-25 of 10,342 resultsfor "Index Terms":differential capacitance
"Index Terms":differential capacitance
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In electrical capacitance tomography, capacitance changes are used to determine the permittivity distribution in the imaging area. However, the changes are small compared with the standing capacitances, e.g., usually in the order of 10%-30%. For a single channel capacitance sensor, a differential configuration having a redundant pair of electrodes can be used to cancel the standing capacitance. Ho...Show More
Derivation of Resonant Period for Soft Switching by Linearizing Output Capacitance of Switching Device
2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia)
Year: 2022 | Conference Paper |
Cited by: Papers (2)
Many soft switching techniques utilize the resonance between an inductor and parasitic output capacitor of switching device. However, output capacitance has nonlinear characteristics depending on drain-source voltage which obscure the resonant period. The proposed method estimates the resonant period by linearizing output capacitance. The method can be applied to the bridge-type converter which ut...Show More
Negative Differential Resistance in Negative Capacitance FETs
Jiuren Zhou;Genquan Han;Jing Li;Yan Liu;Yue Peng;Jincheng Zhang;Qing-Qing Sun;David Wei Zhang;Yue Hao
IEEE Electron Device Letters
Cited by: Papers (103)
We report the investigation of negative differential resistance (NDR) in negative capacitance (NC) germanium (Ge) pFETs. The NDR in NC transistors is attributed to the coupling of drain voltage to the internal gate voltage Vint via the gate-to-drain capacitance. It is demonstrated that NDR strongly depends on the matching between the NC induced by ferroelectric capacitance CFE and the positive cap...Show More
Off-State Negative Differential Capacitance AlGaN/GaN Heterostructures in cryogenic temperature
Siyu Liu;Jiejie Zhu;Jingshu Guo;Minhan Mi;Xiaohua Ma;Yue Hao;Jielong Liu;Yilin Chen
2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Year: 2021 | Conference Paper |
There are few reports on the degradation phenomenon and mechanism of AlGaN/GaN heterojunction field-effect transistors (HFETs) operating at cryogenic temperature. In this paper, the off-state capacitance of AlGaN / GaN HFETs at cryogenic temperature and the room temperature was investigated. The negative differential capacitance at 77 Κ and 300 Κ is 11.26 F and 0.69 F, respectively. The capacitanc...Show More
Regulated capacitance multiplier in CMOS technology
2009 MIXDES-16th International Conference Mixed Design of Integrated Circuits & Systems
Year: 2009 | Conference Paper |
Cited by: Patents (1)
An active realization of the large value capacitance on chip in CMOS technology is described in the paper. Thanks to the application of the regulated gain current amplifier, the resulting capacitance multiplying factor can be varied in the range of tens of picofarads to several nanofarads. The circuit designed in 0.35 mum technology is supplied with +/-1.25 V voltages, and the power consumed by th...Show More
Negative Capacitance Analysis of a Statistically Significant Sample of Discrete Diodes
2024 International Conference on Applied Electronics (AE)
Year: 2024 | Conference Paper |
In this work, capacitance analysis of a statistically significant sample of 30 diodes were conducted for a wide voltage range. For voltages below the built-in bulk potential, a well-known mathematical model exists. This work mainly focusses on potentials above the built-in bulk potential which is not widely understood. This was done using a direct measurement method, through the use of a Capacitan...Show More
Electrical capacitance tomography (ECT) technique has been developed due to its inherent simplicity and low cost. The tomographic images are obtained based on the permittivity differences between the investigated materials and background material (air, in most cases). The dynamic range of capacitance measurements in ECT could be 40 dB or higher. Simultaneously, the changes in the measured capacita...Show More
Digital Converter for Differential Capacitive Sensors
N. Madhu Mohan;Amol Ravikant Shet;S. Kedarnath;V. Jagadeesh Kumar
A digital converter that directly translates variations in the capacitances of a differential-type capacitive sensor to a proportional digital value is described in this paper. A conventional dual-slope, analog-to-digital converter is suitably modified to obtain direct capacitance-to-digital conversion (CDC). Analysis of the proposed technique indicates that the effects of nonidealities and variat...Show More
An interfacing circuit for differential capacitive sensor and its performance analysis
Karunamoy Chatterjee;Sankar Narayan Mahato;Sourav Bhattacharyya;Dhananjoy De
2015 International Conference on Energy, Power and Environment: Towards Sustainable Growth (ICEPE)
Year: 2015 | Conference Paper |
This paper presents an interface circuit to measure various parameters in voltage mode by very small capacitance change in capacitive sensors. Differential capacitance comprises a capacitance-to-voltage conversion with low power, high speed and greater accuracy. Differential capacitance operation principle yields a high-precision measurement for capacitive sensors with increased signal-to-noise im...Show More
Calculation of multiconductor microstrip line capacitances using the semidiscrete finite element method
In this analysis partial finite-element discretization of the Poisson equation is implemented. The governing partial differential equation is thus reduced to a coupled set of ordinary differential equations, which is solved analytically. Formulation of the solution with this technique is more general and versatile than with the method of lines. The method of lines is derived as a special case of t...Show More
microprocessor based measurement of π-model transmission line parameters under fault conditions
2007 IET-UK International Conference on Information and Communication Technology in Electrical Sciences (ICTES 2007)
Year: 2007 | Conference Paper |
This paper presents design, development and testing of an Intel-8086 microprocessor based system for the measurement of transmission line parameters (R and X) under fault conditions. The value of R and X from relay location to fault point are required to be known in order to determine whether the fault point lies in the relay's protective zone or not. In differential equation solution based on ser...Show More
Gate Capacitance Measurement Using a Self-Differential Charge-Based Capacitance Measurement Method
IEEE Electron Device Letters
Cited by: Papers (6)
In this letter, we propose a self-differential charge-based capacitance measurement(SDCBCM) method. It is specifically applied to measure MOSFET gate capacitance with high accuracy. SDCBCM has two main advantages. First, it employs a newly proposed self-differential method to derive the capacitance-voltage (C-V) curve of gate capacitance, thus avoiding the amplification of systematic error during ...Show More
A Novel Direct Digitizer for Leaky Differential Capacitive Sensors Using Phase Sensitive Integration
Muhamed Jamshir M;Sreenath Vijayakumar;Satyajit Das;Karthick Thiyagarajan;Sarath Kodagoda
A novel capacitance to digital converter (CDC), which estimates the capa-citance of a leaky differential capacitive sensor (DCS) based on phase sensitive integration (PSI) is presented in this letter. Various methods to measure the capacitance of a leaky capacitive sensor exist, but all these methods apply to single-element capacitive sensor. Most of the techniques, which measure capacitance of a ...Show More
Design of inductor winding capacitance cancellation for EMI suppression
2006 37th IEEE Power Electronics Specialists Conference
Year: 2006 | Conference Paper |
Cited by: Papers (28)
In this paper, the parasitics in both DM and CM inductors are first discussed. The methods for both DM and CM inductor winding capacitance cancellation are then proposed. Prototypes are designed and tested, using network analyzer. Finally, the prototypes are applied to practical power converters and EMI is measured. Both small signal measurement and practical EMI measurement prove that the propose...Show More
Negative Capacitance Multiplier Configuration Using Single CFOA Employing Grounded Capacitor
2022 International Conference on Electrical, Computer, Communications and Mechatronics Engineering (ICECCME)
Year: 2022 | Conference Paper |
Cited by: Papers (1)
A single Current Feedback Operational Amplifier (CFOA), three resistors and a grounded capacitor based new grounded negative capacitance multiplier (GNCM) is presented. The multiplication factor of the presented GNCM circuit can be controlled uniquely using a resistor. Performance of the presented circuit has been validated using macromodel of CFOA AD844. Various analyses such as frequency analysi...Show More
Application of electrical capacitance tomography and differential pressure measurement in an air-water bubble column for online analysis of void fraction
2011 Fourth International Conference on Modeling, Simulation and Applied Optimization
Year: 2011 | Conference Paper |
Cited by: Papers (6)
Among electrical tomography techniques, electrical capacitance tomography (ECT) has been the subject of extensive recent research due to its non intrusive and non-invasive nature. It is used for obtaining information about the distribution of the contents of closed pipes or vessels by measuring variations in the dielectric properties of the material inside the vessel. An experimental study was con...Show More
Optimum Design of Sensitive Tunnel Diode Discriminators
A new and useful theory was developed to characterize switching properties of the tunnel diode. Expressions for time delay and time variance for small signals in the presence of amplitude noise were developed for the tunnel diode in the discriminator mode. The expression for time variance is used to determine the parameters of the tunnel diode, and the tunnel diode bias condition to obtain the opt...Show More
A 2-Port Stable Negative Capacitance Circuit Design With Unilateral Gain Boosting Technique
Ngoc-Duy-Hien Lai;Nhut-Tan Doan;Hyoungsoo Kim;Sang-Woong Yoon
Herein, we present a floating 2-port nonreciprocal negative capacitance (NCAP) circuit that employs a unilateral gain boosting technique by including an asymmetric cross-coupled differential cascode transistor pair. The proposed circuit provides an asymmetric gain characteristic. The forward gain (S21) is increased at the cost of the backward gain (S12). The technique not only provides a boosted f...Show More
Study on Further Modification of Non-Contact Capacitance Type-Level Transducer for a Conducting Liquid
Sudipta Chakraborty;Saikat Kumar Bera;Nirupama Mandal;Satish Chandra Bera
A non-contact capacitance type liquid-level transducer for a conducting liquid consists of a short circuited non-inductive coil wound on a uniform cylinder made of insulating material, such as glass, PVC, nylon, and teflon. The cylinder is connected with a storage tank through a metallic connector and the capacitance between upper short circuited end of the coil and metallic connector varies linea...Show More
Determine of the Time Constant of Capacitance Applied to Electrical Capacitance Tomography
2022 International Conference on Informatics Electrical and Electronics (ICIEE)
Year: 2022 | Conference Paper |
Cited by: Papers (1)
Electrical Capacitance Tomography (ECT) is a tomography based on capacitance measurement uses a capacitive sensor by injecting a square signal or a sinusoidal signal into the electrode. In measuring capacitance there are several methods including the charge injection method, the active differential method, and the RC time constant method. This paper discusses the analysis of the ability of the RC ...Show More
A 40 mW 3 Gb/s Self-Compensated Differential Transimpedance Amplifier With Enlarged Input Capacitance Tolerance in 0.18 $\mu$m CMOS Technology
By combining an appropriate differential-sensing scheme with the bootstrapping technique, this paper presents a self-compensated design topology which is shown to be effective at reducing the loading effects due to the photodiode and the ESD protection circuit at the differential inputs. The built-in offset creation technique is introduced to overcome voltage headroom limitation. Furthermore, the ...Show More
On the Effect of Body Capacitance to Ground in Tetrapolar Bioimpedance Measurements
Tetrapolar bioimpedance measurements on subjects have long been suspected of being affected by stray capacitance between the subjects' body and ground. This paper provides a circuit model to analyze that effect in the frequency range from 100 Hz to 1 MHz in order to identify the relevant parameters when impedance is measured by applying a voltage and measuring both the resulting current and the po...Show More
Parasitic conscious 54 GHz divide-by-4 injection-locked frequency divider
Kosuke Katayama;Shuhei Amakawa;Kyoya Takano;Minoru Fujishima
2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
Year: 2015 | Conference Paper |
Cited by: Papers (3)
An injection-locked frequency divider (ILFD) is utilized to divide the frequency of a voltage-controlled oscillator (VCO). We propose an ILFD that can be directly connected to a VCO by minimizing the input capacitance of the input nodes. The capacitance is reduced by limiting the number of MOSFETs connected to the injection nodes. We fabricated a 54 GHz divide-by-4 ILFD using 65 nm CMOS technology...Show More
Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance—Part II: Model Validation
Girish Pahwa;Tapas Dutta;Amit Agarwal;Sourabh Khandelwal;Sayeef Salahuddin;Chenming Hu;Yogesh Singh Chauhan
In this paper, we show a validation of our compact model for negative capacitance FET (NCFET) presented in Part I. The model is thoroughly validated with the TCAD simulations with respect to ferroelectric thickness scaling and temperature effects. Interestingly, we find that an NCFET with PZT ferroelectric of a large thickness provides a negative output differential resistance in addition to an ex...Show More
Nanocrystal-Embedded-Insulator Ferroelectric Negative Capacitance FETs With Sub-kT/q Swing
Yue Peng;Wenwu Xiao;Genquan Han;Jibao Wu;Huan Liu;Yan Liu;Nuo Xu;Tsu-Jae King Liu;Yue Hao
IEEE Electron Device Letters
Cited by: Papers (14)
A novel nanocrystal-embedded-insulator (NEI) ferroelectric negative capacitance field-effect transistor (NCFET) is proposed and demonstrated. The NEI layer comprises orthorhombic ZrO2 nanocrystals embedded in amorphous Al2O3, as confirmed by high-resolution scanning transmission electronmicroscopy and diffraction analysis. The ferroelectric nature of NEI is proved by polarization-voltage measureme...Show More
Standards Dictionary Terms
- capacitor bank
- capacitor control
- capacitor element (or element)
- capacitor line fuse (capacitor group fuse)
- discharge device
- fused capacitor
- fuseless capacitor bank
- individual capacitor fuse
- internally fused capacitor (unit)
- kilovar (1000 vars)
- thyristor-controlled reactor (TCR)
- thyristor-switched capacitor (TSC)
- unfused capacitor (unit)
- unfused capacitor bank
- CT
- CVT
- DGA
- FRA
- IVPD
- MOSA
- UHV
- VT
- ac
- automatic
- autoreclosing
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