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A 2-6 GHz High-Gain and High-Power-Density GaN Power Amplifier
2024 IEEE Asia-Pacific Microwave Conference (APMC)
Year: 2024 | Conference Paper |
This paper presents a 2–6 GHz wideband power amplifier (PA) with a high power density in a 0.25-μm GaN HEMT technology. The design of the wideband PA incorporates an optimal matching network for the output matching and a capacitively and inductively coupled resonator for the interstage matching. This PA achieves a small signal gain ranging from 18.3 to 23.3 dB, and the saturated output power (Psat...Show More
A Miniaturized Microstrip-Based Phase Inverter as a Phase Delay Component at 24 GHz
Sheng-Wei Wu;Ian Huang;Robin Jeanty;Zi-Hao Fu;Kun-You Lin;Shih-Yuan Chen
2024 International Symposium on Antennas and Propagation (ISAP)
Year: 2024 | Conference Paper |
This paper presents a miniaturized microstrip-based phase inverter (PI) operating from 23.05 to 25 GHz. The proposed miniaturized PI integrates interdigital capacitors and meander slots on the ground plane while utilizing only two metallic vias to achieve a compact size. The circuit area of the layout is only 24.4% when compared to the original microstrip-based PI and 32.4% when compared to the or...Show More
Millimeter-Wave Wideband CMOS Power Amplifier Using Inductive-Compensation Distributed Active Transformer
IEEE Transactions on Microwave Theory and Techniques
Year: 2024 | Early Access Article |
This article proposes a millimeter-wave wideband power amplifier (PA) featuring an inductive-compensation distributed active transformer (DAT) fabricated using a 90-nm CMOS process. The DAT is designed with a compact size of 0.004 mm ^{2} , aiming for high power-combining efficiency (PCEFF) and wideband performance. The PA achieves a saturated output power ( P_{\text{SAT}} ) of 20.6 dBm, a max...Show More
A Wideband Bi-Directional Active Mixer for 5G Millimeter-Wave Applications
2024 IEEE/MTT-S International Microwave Symposium - IMS 2024
Year: 2024 | Conference Paper |
This paper presents a millimeter-wave (mmW) bi-directional Gilbert-cell mixer with low conversion loss (CL) and local oscillating (LO) power in a 90-nm CMOS process. The proposed double-balanced mixer provides a wide 3-dB bandwidth from 28 to 43 GHz in transmit (Tx) mode and 24 to 43 GHz in receive (Rx) mode. The compact area is achieved by modifying Marchand balun with compensating capacitors and...Show More
28 GHz GaAs pHEMT High-Efficiency Power Amplifier Using Multi-Section Transmission-Line Power Combining/Matching Technique
2024 IEEE/MTT-S International Microwave Symposium - IMS 2024
Year: 2024 | Conference Paper |
This paper presents a 28-GHz, 1-W power amplifier (PA) with 41% peak PAE fabricated in a 0.15-μm GaAs pHEMT process. The proposed multi-section low-impedance transmission line matching network can adequately combine the output power and provide a low-loss output matching network in a compact area. The measured small-signal gain is 18.7 dB, and the measured saturated output power (PSAT) is 30.1 dBm...Show More
Millimeter-Wave GaAs Ultra-Wideband Medium Power Amplifier and Broadband High-Power Power Amplifier for 5G/6G Applications
Zi-Hao Fu;Ming-Xuan Li;Tzyh-Ghuang Ma;Chan-Shin Wu;Kun-You Lin
This paper presents an ultra-wideband (UWB) medium power amplifier (MPA) and a broadband high-power power amplifier (HPA) operating at the 5G/6G frequency bands. By using 0.15~\mu \text{m} GaAs pseudomorphic high electron mobility transistor (pHEMT) technology process, the proposed UWB MPA delivers an average small-signal gain of 16.5 dB, a saturation output power ( \text{P}_{\mathrm {sat}} ...Show More
This paper presents a broadband 90-nm CMOS low-noise amplifier (LNA) for multi-band 5G millimeter-wave (mmW) applications. The second stage amplifier utilizes the transconductance \left(g_{m}\right)-boosting technique to increase the gain peak at the high-frequency range and obtain a broadband performance. The measured small-signal gain is greater than 18.5 dB in the frequency range of 18 GHz to...Show More
This paper presents a millimeter-wave (mmW) wideband low noise amplifier (LNA) fabricated in 0.15-\mu \mathrm{m} GaAs pHEMT process. The LC \pi-type input matching network and gain-distributed technique are utilized to achieve the wideband low noise and high-gain performance. The proposed L N A achieves a 3-dB bandwidth (BW) of 25-43 GHz, with a small-signal peak gain of 24.8 dB. The lowes...Show More
High-Power and Small-size CMOS T/R Switch Using Stacked Inductor
2023 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
Year: 2023 | Conference Paper |
This paper presents a miniaturized high-power handling CMOS T/R switch. The chip size can be miniaturized by adapting the stacked inductor to compensate for the non-ideal switching characteristics of the transistors in both transmit and receive paths for the asymmetric T/R switch. The minimum insertion loss is 1.8 dB, and 1-dB bandwidth is 68% from 19.5 GHz to 39.5 GHz in Tx mode. For the Rx mode,...Show More
Wideband 5-bit Vector-sum Phase Shifter for 5G Millimeter-wave Applications
2023 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
Year: 2023 | Conference Paper |
This paper presents a wideband 5-bit vector-sum phase shifter implemented in a low-cost 90-nm CMOS process. The proposed vector-sum phase shifter consists of a wideband quadrature generator with low amplitude/phase imbalance and a wideband, low-phase variation variable-gain amplifier integrated with 0/π phase shifter to satisfy most of the operation frequency bands of the 5G millimeter-wave commun...Show More
A millimeter-wave (mmW) ultra-wideband power amplifier (PA) fabricated in 0.15-μm GaAs pHEMT process is proposed. The equivalent magnetically-coupled resonator (MCR) is adopted to obtain wideband power performance. The input and inter-stage matching network is designed for small-signal gain-flatness to achieve a wideband small-signal response. This PA achieves a saturated output power (Psat) of 25...Show More
A 28/38 GHz Dual-Band and Dual-Mode CMOS Power Amplifier Using Constant Optimal Load Impedance Method
2022 Asia-Pacific Microwave Conference (APMC)
Year: 2022 | Conference Paper |
This paper presents a 28/38 GHz dual-band and dual-mode power amplifier (PA) fabricated in a 90-nm CMOS process. With the proposed constant optimal load impedance (Zopt) method, this dual-mode PA can achieve the optimal power performance of both modes using the same matching circuit and improve the linear output power in low-power (LP) mode. In the high-power (HP) mode, the proposed PA demonstrate...Show More
Wideband Reconfigurable Power Divider/Combiner in 40-nm CMOS for 5G mmW Beamforming System
A passive and active wideband reconfigurable power divider (PD)/power combiner (PC) is proposed and realized in 40-nm CMOS for fifth-generation (5G) millimeter-wave (mmW) beamforming systems. Based on the conventional Wilkinson PD/PC, the synthesis two-stage LC ladder is used to replace the quarter-wavelength transmission line to save the die area and achieve a wideband design for the passive PD/P...Show More
A 28/39 GHz Dual-Band Power Amplifier Using Optimal Matching Contour in GaAs pHEMT
2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
Year: 2021 | Conference Paper |
Cited by: Papers (5)
In this paper, a dual-band power amplifier (PA) fabricated in 0.15-μm GaAs pHEMT process is presented. The concept of the optimal matching contour is used in the matching network design to minimize the loss in both operating frequency bands. Thus, this PA achieves good power performance in both frequency bands. The measured results of small-signal gain are 20/12 dB at 28/39 GHz, respectively. The ...Show More
Dual-input LNA for Switchable Daul-circular Polarization Satellite Receiver
2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
Year: 2021 | Conference Paper |
Cited by: Papers (1)
This paper presents a switchable dual-input low-noise amplifier (LNA) with notch filters for the switchable dual-circular polarization satellite receiver. Notch filters with different resonant frequencies provide a wideband stopband suppression and avoid degradation results from the process variation. The measured small-signal gain is 19.2 dB, and the simulated noise Figure (NF) is 1.55 dB at 19 G...Show More
A 28-GHz Bidirectional Active Gilbert-Cell Mixer in 90-nm CMOS
A bidirectional active mixer based on Gilbert-cell topology is proposed and realized in 90-nm CMOS at 28 GHz. The offered mixer can achieve both the up- and down-conversion under 1-dBm local oscillator (LO) power by adjusting the Gilbert quad switch's gate bias. An IF bidirectional amplifier (IFBDA) is adapted to compensate for the conversion loss (CL) of the Gilbert quad switch. The measured peak...Show More
A 28-GHz High Linearity and High Efficiency Class-F Power Amplifier in 90-nm CMOS Process for 5G Communications
2020 15th European Microwave Integrated Circuits Conference (EuMIC)
Year: 2021 | Conference Paper |
Cited by: Papers (1)
A 28-GHz Class-F power amplifier fabricated in 90-nm CMOS process for 5G communications is presented in this paper. This PA is a differential pair topology consisted of two common-source cells. The harmonic-tuned network is constructed to enhance the efficiency. The proposed Class-F PA achieves a 12-dB small-signal gain with 7.4-GHz 3-dB bandwidth (25.1-32.5 GHz), saturated output power (Psat) of ...Show More
38-GHz Phased Array Transmitter and Receiver Based on Scalable Phased Array Modules With Endfire Antenna Arrays for 5G MMW Data Links
Chun-Nien Chen;Yi-Hsien Lin;Li-Cheng Hung;Tzu-Chien Tang;Wei-Pang Chao;Cheng-Yu Chen;Po-Hsiang Chuang;Guan-Yu Lin;Wei-Jun Liao;Yu-Hsiang Nien;Wei-Cheng Huang;Tai-Yu Kuo;Kun-You Lin;Tian-Wei Huang;Yi-Cheng Lin;Hsin-Chia Lu;Tsung-Heng Tsai;Huei Wang
This article presents the 38-GHz phased array 32-element Tx and 16-element Rx with 2-GHz IF and 5-GHz LO for fifth-generation (5G) millimeter-wave (MMW) communications. The Tx and Rx beamformers and upconverters/downconverters are fabricated in 65-nm CMOS. The PAs and LNAs near antenna ends are fabricated in 0.15- \mu \text{m} GaAs pHEMT. The eight-element Tx and four-element Rx phased array pr...Show More
38-GHz Phased Array Transmitter and Receiver Based on Scalable Phased Array Modules With Endfire Antenna Arrays for 5G MMW Data Links
Chun-Nien Chen;Yi-Hsien Lin;Li-Cheng Hung;Tzu-Chien Tang;Wei-Pang Chao;Cheng-Yu Chen;Po-Hsiang Chuang;Guan-Yu Lin;Wei-Jun Liao;Yu-Hsiang Nien;Wei-Cheng Huang;Tai-Yu Kuo;Kun-You Lin;Tian-Wei Huang;Yi-Cheng Lin;Hsin-Chia Lu;Tsung-Heng Tsai;Huei Wang
A Millimeter-Wave Dual-Band Class-F Power Amplifier in 90 nm CMOS
Zhi-Jia Huang;Zi-Hao Fu;Bo- Wei Huang;Yu-Ting Lin;Kun-Yao Kao;Kun-You Lin
2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
Year: 2020 | Conference Paper |
Cited by: Papers (3)
A 28/38 GHz dual-band class-F power amplifier (PA) using 90-nm CMOS process is proposed. The efficiency of the two-stage PA is enhanced by the proposed dual-band class-F output matching network, in which the harmonic impedance of both bands is controlled to fulfill the voltage and current waveform for class-F operation. The proposed PA achieves a measured small-signal gain of 20.5 and 14.6 dB, sat...Show More
A 38-GHz 32-Element Phased-Array Transmitter Based on Scalable 8-Element Phased-Array Modules for 5G MMW Data Links
Chun-Nien Chen;Li-Cheng Hung;Yi-Hsien Lin;Tzu-Chien Tang;Wei-Pang Chao;Guan-Yu Lin;Wei-Jun Liao;Yu-Hsiang Nien;Wei-Cheng Huang;Tai-Yu Kuo;Kun-You Lin;Tian-Wei Huang;Yi-Cheng Lin;Hsin-Chia Lu;Tsung-Heng Tsai;Huei Wang
2020 IEEE/MTT-S International Microwave Symposium (IMS)
Year: 2020 | Conference Paper |
Cited by: Papers (1)
This paper presents a 38-GHz 32-element phased-array Tx (transmitter) for the 5G millimeter wave (MMW) communications. The 8-element phased-array Tx modules with 2 GHz IF/5 GHz LO are implemented, and four pieces of the module are stacked to realize an 8×4 brick array. The 38 GHz measurements of the 32-element Tx show 41.8 dBm EIRP at OP_{1dB} with -41.8 dBc image rejection ratio (IMRR) and -35 ...Show More
A 38-GHz 32-Element Phased-Array Transmitter Based on Scalable 8-Element Phased-Array Modules for 5G MMW Data Links
Chun-Nien Chen;Li-Cheng Hung;Yi-Hsien Lin;Tzu-Chien Tang;Wei-Pang Chao;Guan-Yu Lin;Wei-Jun Liao;Yu-Hsiang Nien;Wei-Cheng Huang;Tai-Yu Kuo;Kun-You Lin;Tian-Wei Huang;Yi-Cheng Lin;Hsin-Chia Lu;Tsung-Heng Tsai;Huei Wang
Year: 2020 | Conference Paper |
Modified Binomial Power Distribution Beamformer for Switched-Beam Circular Array
2020 14th European Conference on Antennas and Propagation (EuCAP)
Year: 2020 | Conference Paper |
In this paper, we proposed a modified binomial power distribution circular beamforming network (BFN) with a single input port at the center and 12 antenna ports uniformly located along the outer rim of the BFN for full 360° azimuth coverage switched-beam circular antenna array. By combining and interleaving three modified binomial power distribution circuits (PDCs) with three two-way power combini...Show More
A Compact E- Mode GaAs pHEMT Phase Shifter MMIC for 5G Phased-Array Systems
2019 IEEE Asia-Pacific Microwave Conference (APMC)
Year: 2019 | Conference Paper |
Cited by: Papers (9)
A compact 38-GHz 4-bit phase shifter using 0.15-μm GaAs pHEMT process is proposed. By Adopting the E-mode process within the switching-type phase shifter (STPS), low-loss performance is achieved in a miniaturized chip size without negative control voltage. The proposed phase shifter has 10.7-dB average insertion loss over the 36-39 GHz, and loss variation is about 1.81 dB. The measured rms phase e...Show More
A High-Gain Continuous Class- F Power Amplifier in 90-nm CMOS for 5G Communication
2019 IEEE Asia-Pacific Microwave Conference (APMC)
Year: 2019 | Conference Paper |
Cited by: Papers (4)
A continuous class-F power amplifier (PA) is proposed using 90-nm CMOS process. The efficiency of the two-stage PA is enhanced by the proposed continuous class-F output matching network, which controls the reactive movement of the fundamental and 2nd harmonic impedances to achieve impedance condition of continuous class F. Besides, the gate bias of driver stage is designed for the reverse AM-PM di...Show More
Fabrication and Characterization of Millimeter Wave 3D InFO Dipole Antenna Array Integrated with CMOS Front-end Circuits
C. H. Tsai;C. W. Hsu;K. Y. Kao;T. C. Tang;C. L. Lu;K. C. Wu;H. P. Pu;K. Y. Lin;H. Wang;T. L. Wu;C. S. Liu;C. T. Wang;Doug C. H. Yu
2019 IEEE International Electron Devices Meeting (IEDM)
Year: 2019 | Conference Paper |
Cited by: Papers (7)
A high performance 3D dipole antenna with metal thickness >100 μm for wide bandwidth and lateral radiation is realized on InFO package. 25 % wide fractional bandwidth, from 60 to 77 GHz, has been obtained. The beamforming capability of the antenna array system with 6 dBi gain is measured in a 40 nm CMOS RFIC co-designed system.Show More
A Dual-Band CMOS Standing-Wave Digitally Controlled Oscillator for Automotive Radars
2019 IEEE MTT-S International Microwave Symposium (IMS)
Year: 2019 | Conference Paper |
Cited by: Papers (4)
The 22/75-GHz dual-band digitally controlled oscillator based on standing-wave topology is proposed. By properly choosing the capacitance and respective transmission line length, the high- and low-band frequency ratio could exceed 3 in millimeter-wave region. To resolve the low-Q property originated from the varactor, digitally controlled artificial dielectric is applied to provide high-Q digital ...Show More
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