I. Introduction
Insulated Gate Bipolar Transistor (IGBT), as an important power electronic switching device, is widely used in various power converter systems in electric vehicle drive, power generation and transmission, and many other industries. Researches show that the failures of power electronic devices account for most of the failures of power converter systems and IGBT faults account for 42% [1]. With the increasing concern on IGBT reliability, condition monitoring (CM) has become an effective technique to prevent IGBT failures. By monitoring the health state of IGBT module, the CM system can give a timely warning before the failure [2]-[3], so that catastrophic accidents are prevented and the cost of operation as well as maintenance are reduced.