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GaSb-based angled cavity semiconductor lasers | IEEE Conference Publication | IEEE Xplore

GaSb-based angled cavity semiconductor lasers


Abstract:

Angled cavities can suppress filamentation in mid-IR broad area diode lasers we fabricated, but some high order modes still exist. By removing certain regions that don't ...Show More

Abstract:

Angled cavities can suppress filamentation in mid-IR broad area diode lasers we fabricated, but some high order modes still exist. By removing certain regions that don't contribute gain to the fundamental mode, we demonstrate improved beam quality, and a ~2 fold brightness enhancement.
Date of Conference: 16-19 October 2022
Date Added to IEEE Xplore: 17 November 2022
ISBN Information:
Print on Demand(PoD) ISSN: 0899-9406
Conference Location: Matsue, Japan

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