I. Introduction
The fifth-generation (5G) communication systems at millimeter-wave (mm-wave) frequencies are being actively developed which meet the demand of high-speed and low-latency data links [1]–[3]. Within the frequency range 2 (FR2) defined in the 5G new radio (NR) standard, there are different frequency bands have been allocated worldwide to 5G mm-wave wireless communication systems, including n257 band (26.5-29.5 GHz), n258 band (24.25-27.50 GHz), and n261 band (27.5-28.35 GHz) [4]. To improve the equivalent isotropic radiated power (EIRP) and signal-to-noise ratio (SNR) of transceivers at mm-wave bands, 5G communication links will rely on directive communications using phased-array techniques to overcome high free-space path loss (FSPL) [5]–[8]. Based on above-mentioned, the cost and size of phased-arrays need to be significantly lowered for massive use, which indicates the designed phased-array beamformer chips should not only can operate over a wider band so as to allow multi-standard operation, but also require the low noise amplifier (LNA), power amplifier (PA), switches, phase shifters (PSs), variable gain amplifiers (VGAs), up/downconverters integrated together on a single chip.