I. Introduction
Technology scaling has brought significant challenges to circuit designers due to the intrinsic physical limitations of silicon devices [1]. One of the major barriers that CMOS devices face at nanometer scale is increasing process parameter variations. Process imperfections, such as metal work-function, random dopant fluctuations and line-edge roughness cause devices to exhibit large variability in their electrical parameters, particularly in the threshold voltage , as well as in other device parameters (e.g., channel length, gate width, oxide thickness) [2] and circuit wiring. Thus, the operating frequency becomes unsustainable under the effect of process variations, leading to unpredictable timing violations [3]. For the examined circuits in this work, Fig. 1 presents the worst-case error due to timing violations (details on the experimental setup can be found in Section VI). Both the error magnitude and the peak differentiation among circuits (one order of magnitude) showcase their unpredictability and catastrophic nature. Hence, parametric yield of a circuit (i.e., probability to meet the desired performance specification) is expected to suffer considerably under process variations and thus, reliable operation cannot be guaranteed.
Worst-case error evaluation obtained from a 1000-point monte-carlo variability analysis for several arithmetic circuits, image processing benchmarks, and machine learning classifiers (see Section VI). The normalized mean error distance (NMED) error metric is used (see Section V-B.1).