Optimal Simulation Research of MEMS Electric Field Measurement Sensor Based on Piezoelectric-Piezoresistive Coupling

To improve the accuracy and bandwidth of electric field measurement, and solve the problems of large size and high cost of current electric field measurement equipment. Based on the Piezoelectric-Piezoresistive coupling mechanism, this paper constructs a physical model of the MEMS (microelectro-mechanical systems) miniature electric field measurement sensor device. Through finite element simulation calculations, the strain changes of piezoelectric materials and semiconductor membranes of different sizes are studied and compared, and it is found that: The micro-sensors with 400µm side length and 350µm thickness of piezoelectric materials, 20µm thickness and 500µm side length of semiconductor membrane can be used to measure the electric field, which provides a certain reference for the measurement of electric field and the development of electric field measurement sensor.

I. Introduction

At present, traditional voltage transformers in power systems have disadvantages such as large size, small dynamic range, complex insulation structure, and poor transient performance [1]–[2], which is not conducive to the development of multi-dimensional, broadband and miniaturization of electric field measurement the commonly used electric field measurement sensors mainly include optical sensors. Optical sensors are mainly divided into two categories, One is the Pockels effect sensor ^[3]–[6] and Kerr electric field sensor ^[7]–[8] based on the photoelectric effect.