Loading [MathJax]/extensions/MathZoom.js
Modeling Techniques for MHEMT Devices up to 110GHz | IEEE Conference Publication | IEEE Xplore

Modeling Techniques for MHEMT Devices up to 110GHz


Abstract:

This paper mainly introduces a method to build a nonlinear model of MHEMT, mainly to solve the problem of short channel effect of MHEMT. In order to accurately characteri...Show More

Abstract:

This paper mainly introduces a method to build a nonlinear model of MHEMT, mainly to solve the problem of short channel effect of MHEMT. In order to accurately characterize the active devices below 110GHz, a LRRM calibration kit was designed to be implemented on the same substrate as the devices. According to the improved Angelov model method, the equivalent circuit of MHEMT device is extracted. Excellent agreements between measured and simulated data are obtained in the frequency up to 110 GHz.
Date of Conference: 23-26 May 2021
Date Added to IEEE Xplore: 01 December 2021
ISBN Information:
Conference Location: Nanjing, China

Introduction

InP HEMT devices have been widely used in the design of low noise amplifiers due to their high cut-off frequency, high oscillation frequency and low noise. Accurate measurement result and modeling are the basis of circuit design.

References

References is not available for this document.