I. Introduction
Wide-band-gap (WBG) semiconductors, such as GaN and SiC, enable highly efficient energy conversion at frequencies reaching the MHz-range. Reduced losses enable more compact cooling systems, whereas higher switching frequencies allow a size-reduction in passive components. These properties make WBG devices prime candidates for a future generation of compact power converters, supporting the electrification of society. However, the low losses and high frequencies of these devices poses a challenge for system-level characterization [1]. The use of electrical measurements to determine the losses in circuit components operating at high frequencies are prone to errors, due to problems including bandwidth limitations of the measurement equipment and signal offsets. Subtracting two similar values even with a relatively small error can result in a measured loss with a large uncertainty [2]. As a result, this causes spurious efficiency measurements, and can cause observed efficiencies to exceed 100% [3].