I. Introduction
In-SRAM computing has been widely explored to mitigate the memory wall constraints in the von-Neumann computer architecture [1], [2]. A compute SRAM (CSRAM) exploits a technique called “bitline computing” [3], which simultaneously accesses two rows of bitcells sharing the same pair of bitlines so that some logic/arithmetic functions can be achieved by sensing the bitline voltages [4]–[6]. This compute SRAM presents quite distinctive bitline discharge behaviors compared to a normal SRAM. For example, the bitlines of CSRAM will generate three different voltage levels during compute access. Besides, the CSRAM also needs to maintain the normal SRAM function (i.e., a normal read access) [7], [8]. However, it is challenging to design high-speed sensing topologies that are optimized for both compute access and normal read access [9], [10].