The impact of driving capacity on single-event effect vulnerability of standard cell

The impacts of driving capacity on single-event effect vulnerability of 40 nm standard cells were studied. The result shows that cells with high driving capacity are inclined to have stronger single-event effect tolerance. AND gate has smaller SET cross section and transient pulse width than OR gate and D flip-flop.

I. INTRODUCTION

With the rapid development of space technology, a great number of spacecrafts are threatened by radiation effects [ 1 – 2 ]. As circuit geometries continue to scale down, circuits are increasingly affected by single-event effect (SEE). Soft errors caused by SEE are the main cause of circuit failure, including single-event upset (SEU) and single-event transient (SET) [ 3 – 5 ].