I. Introduction
In recent years, GaN HEMT devices have been widely used in high-frequency and high-power circuits design. However, the operating frequency of the device is limited by the size of the device. With the increase of the operating frequency, the short-channel effect of the device becomes more and more obvious. Moore's law is in question [1]. In order to overcome the adverse effects of short-channel effect, Fin-FET was proposed [2]–[3]. In 2017, Dr. Kai Zhang reported a AIGaN/GaN FinFET featuring T -shaped gate and extremely linearity of transconductance characteristics [4]. GaN FinFET combines the advantages of fin structure, such as better suppression of short channel effect. Compared with the flat HEMT devices, the device exhibits better linearity, higher current density and power density. It can not only be applied to satellite communication, electronic countermeasures, phased array radar and radar communication integration, but also has shown its specific advantages in commercial mobile wireless communication.