Contents 1. Introduction
LAE devices and circuits, which have been employed in flat-panel displays‘r’, have recently drawn interest for broader sensing applications requiring high frequency operatiorr’”, Very recently, this has extended to wireless-sensing applicationsv’”, where the ratio of radiative aperture dimension (D) to signal wavelength is critical, as it sets the spatial resolution of a radiating beam. To illustrate the distinct advantage of LAE in such applications compared to Si-CMOS, we compare the achievable aperture sizes (largest D) and operating frequencies (smallest ) in Fig. 1. While Si-CMOS is capable of operation to hundreds of gigahertz, realistic chip sizes restrict (typically required to be >10), limiting to applications above 100 GHz frequencies (where circuit power and radiation losses in air8 are high). On the other hand, bringing LAE into gigahertz regime opens up a new frequency range for large 's (‘This work’ region in Fig. 1). This frequency band is of interest for long-range wireless communication (cellular phones, satellites) and indoor meters-scale communication (WLAN, Bluetooth). In addition, due to low temperature processing, LAE also enables flexible and conformal form factors, which could ease deployment of wireless nodes in 5G/IoT networks.
Aperture size D and frequencyf achievable by LAE and si-cmos.
