Contents I. Introduction
Recent development in medium-voltage wide bandgap-based silicon carbide (SiC) power semiconductor devices, in ranges of 10–15 kV, has opened up opportunities to replace conventional silicon-based multilevel and cascaded converter systems with simpler SiC-based converter systems [1]–[3]. This helps to make the system robust and provides higher reliability. In addition to low on-state resistance, compared to its silicon counterparts, the fast switching capability of these SiC-based devices has made medium-voltage converter operation at high frequencies possible [4]–[7]. A higher switching frequency helps reduce the size and weight of the magnetic components, thus improving the power density of the entire system. The advantages of these medium-voltage SiC power semiconductor devices have opened up different areas of applications, including high-speed motor drives, medium voltage, multi-MW dc microgrid/nanogrid [8], medium-voltage high-power EV battery charging [9], [10], and solid state transformers interfaced to medium-voltage ac grids [11]–[14].
