Abstract:
In this letter, we present on-silicon structures on-wafer measurements up to 500 GHz and a comprehensive electromagnetic (EM) simulation analysis to understand nonideal b...Show MoreMetadata
Abstract:
In this letter, we present on-silicon structures on-wafer measurements up to 500 GHz and a comprehensive electromagnetic (EM) simulation analysis to understand nonideal behavior in the measured data. The EM simulations are performed in such a way that the simulation setup remains very close to the physical measurement environment where a faithful EM model of the RF probes is an essential requirement. In this process, four different commercial RF probes used during measurements in the frequency bands 1-110 GHz, 140-220 GHz, 220-325 GHz, and 325-500 GHz are closely designed in the EM simulator. We also highlight the importance of the frequency band specific probe models to develop a deep understanding of the problems encountered in the sub-THz and THz measurements.
Published in: IEEE Transactions on Terahertz Science and Technology ( Volume: 10, Issue: 5, September 2020)
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