I. Introduction
With the emergence of millimeter-wave (mm-wave) technologies, the ability of distributed power amplifiers (DPAs) to achieve high output power (), large gain and wide bandwidth (BW), in commercial CMOS technologies will open the door to new broadband applications. There is, however, a design tradeoff, where most of reported silicon-based distributed amplifiers (DAs) either have a GHz in exchange with low-power performance [1]–[6], or an output power >15 dBm with a smaller BW [7]–[13]. The reason is that high-power generation under a limited voltage supply requires large device sizes for high-current generation (low-impedance designs). However, in DAs, a high is achieved by increasing the number of stages while keeping a small device per stage to preserve the BW. The number of stages is limited by the input transmission-line (TL) loss that increases with frequency, as higher TL loss impedes the input signal flow to the last stages, limiting their and gain contribution. The gain–bandwidth (GBW) product can still be improved for a limited by cascading DAs to increase the gain at the expense of chip area and efficiency.