I. Introduction
Magnetic tunnel junction (MTJ)-based spintronic devices have gained huge attention due to their improved performance and broad panel of applications [1]–[3]. In particular, recent developments in MTJ-based devices have shown a path for futuristic low-power memory applications [4], [5]. In particular, the perpendicular MTJ (p-MTJ) with spin-transfer torque (STT)-based switching possesses nonvolatile behavior with high endurance, fast switching, and simple device structure [6], [7]. On the other hand, as the cell area is scaled down to meet density and power demands, conventional STT-RAM suffers from endurance and reliability issues due to the aging of the ultrathin tunnel barrier and read current disturbance [6]. Furthermore, there is an imperative need to lower STT switching current densities to further reduce power consumption that has still not yet been met [4], [8].