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Low dark current GaN avalanche photodiodes | IEEE Journals & Magazine | IEEE Xplore

Low dark current GaN avalanche photodiodes


Abstract:

We report the fabrication and characterization of GaN avalanche photodiodes grown on sapphire by metalorganic chemical vapor deposition. Current-voltage characteristics i...Show More

Abstract:

We report the fabrication and characterization of GaN avalanche photodiodes grown on sapphire by metalorganic chemical vapor deposition. Current-voltage characteristics indicate a gain higher than 23. The photoresponse is independent of the bias voltage prior to the onset of avalanche gain which occurs at an electric field of /spl sim/4 MV/cm. Near avalanche breakdown, the dark current of a 30-/spl mu/m diameter device is less than 100 pA. The breakdown shows a positive temperature coefficient of 0.03 V/K that is characteristic of avalanche breakdown.
Published in: IEEE Journal of Quantum Electronics ( Volume: 36, Issue: 12, December 2000)
Page(s): 1389 - 1391
Date of Publication: 31 December 2000

ISSN Information:


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