Abstract:
We report the fabrication and characterization of GaN avalanche photodiodes grown on sapphire by metalorganic chemical vapor deposition. Current-voltage characteristics i...Show MoreMetadata
Abstract:
We report the fabrication and characterization of GaN avalanche photodiodes grown on sapphire by metalorganic chemical vapor deposition. Current-voltage characteristics indicate a gain higher than 23. The photoresponse is independent of the bias voltage prior to the onset of avalanche gain which occurs at an electric field of /spl sim/4 MV/cm. Near avalanche breakdown, the dark current of a 30-/spl mu/m diameter device is less than 100 pA. The breakdown shows a positive temperature coefficient of 0.03 V/K that is characteristic of avalanche breakdown.
Published in: IEEE Journal of Quantum Electronics ( Volume: 36, Issue: 12, December 2000)
DOI: 10.1109/3.892557