High-Power W-band to G-band Photonically-Driven Electromagnetic Emitter with 8.8 dBm EIRP

In this paper, a wideband high-power photonicallydriven integrated electromagnetic emitter is proposed with operation from W-band through G-band (75 GHz to 220 GHz). The wideband and high-power behaviors are achieved by integrating a high-power charge-compensated modified unitravelling carrier (CC-MUTC) photodiode (PD) with a high-directivity two-arm sinuous antenna. The PD with a diameter of 5 μm achieves a responsivity of 0.2 A/W and a 3-dB bandwidth of 120 GHz. The measurement results indicate that the emitter provides a high effective isotropic radiated power (EIRP) between 75 GHz to 210 GHz, achieving a maximum EIRP of 8.8 dBm at 130 GHz.

I. Introduction

The globally growing demand for high speed data transmission rates forces carrier frequencies to be extended to mm-wave and THz realms as the low frequency bands are too crowded for growing high-speed wireless communication [1]. Intensive efforts are devoted into sub-THz or THz electronic devices over 100 GHz. However, the performance of traditional electronic devices deteriorates significantly as frequency reaches the THz domain. Therefore, the generation of a THz wireless signal via electronic devices becomes difficult and costly.