Abstract:
A suspended AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO3) nanofilm modified gate was microfabricated and characterized for ppm-...Show MoreMetadata
Abstract:
A suspended AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO3) nanofilm modified gate was microfabricated and characterized for ppm-level acetone gas detection. The sensor featured a suspended circular membrane structure and an integrated microheater to select the optimum working temperature. High working temperature (300°C) increased the sensitivity to up to 25.7% and drain current change IDS to 0.31 mA for 1000-ppm acetone in dry air. The transient characteristics of the sensor exhibited stable operation and good repeatability at different temperatures. For 1000-ppm acetone concentration, the measured response and recovery times reduced from 148 and 656 to 48 and 320 s as the temperature increased from 210 °C to 300 °C. The sensitivity to 1000-ppm acetone gas was significantly greater than the sensitivity to ethanol, ammonia, and CO gases, showing low cross-sensitivity. These results demonstrate a promising step toward the realization of an acetone sensor based on the suspended AlGaN/GaN HEMTs.
Published in: IEEE Transactions on Electron Devices ( Volume: 66, Issue: 10, October 2019)
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1.
Jianwen Sun, Teng Zhan, Robert Sokolovskij, Zewen Liu, Pasqualina M. Sarro, Guoqi Zhang, "Enhanced Sensitivity Pt/AlGaN/GaN Heterostructure NO₂ Sensor Using a Two-Step Gate Recess Technique", IEEE Sensors Journal, vol.21, no.15, pp.16475-16483, 2021.
Cites in Papers - Other Publishers (10)
1.
Shivangi Srivastava, Sajal Agrawal, "Potential of nanomaterials in FET-based breath sensing: A comprehensive review & future directions", Micro and Nanostructures, pp.207830, 2024.
2.
Yang Jiang, Wenmao Li, Fangzhou Du, Robert Sokolovskij, Yi Zhang, Shuhui Shi, Weiguo Huang, Qing Wang, Hongyu Yu, Zhongrui Wang, "A comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses", Journal of Materials Chemistry C, 2023.
3.
Keuntae Baek, Sanghun Shin, Hongyun So, "Decoupling thermal effects in GaN photodetectors for accurate measurement of ultraviolet intensity using deep neural network", Engineering Applications of Artificial Intelligence, vol.123, pp.106309, 2023.
4.
Nipun Sharma, Vikas Pandey, Ankur Gupta, Swee Tiam Tan, Sudhiranjan Tripathy, Mahesh Kumar, "Recent progress on group III nitride nanostructure-based gas sensors", Journal of Materials Chemistry C, vol.10, no.34, pp.12157, 2022.
5.
Meng-Ya Fan, Robert Sokolovskij, Qing Wang, Hongze Zheng, Kangyao Wen, Fangzhou Du, Guangnan Zhou, Yu-Long Jiang, Hongyu Yu, "Carbon monoxide detection down to ppb-level realized by O2 plasma treated TiO2-gated AlGaN/GaN HEMT sensor", Sensors and Actuators B: Chemical, vol.359, pp.131556, 2022.
6.
Pan Zhang, Yin Xiao, Jingjing Zhang, Bingjie Liu, Xiaofei Ma, Yong Wang, "Highly sensitive gas sensing platforms based on field effect Transistor-A review", Analytica Chimica Acta, vol.1172, pp.338575, 2021.
7.
Kavita T. Upadhyay, Manju K. Chattopadhyay, "Sensor applications based on AlGaN/GaN heterostructures", Materials Science and Engineering: B, vol.263, pp.114849, 2021.
8.
Jianwen Sun, Shuo Zhang, Teng Zhan, Zewen Liu, Junxi Wang, Xiaoyan Yi, Jinmin Li, Pasqualina M. Sarro, Guoqi Zhang, "A high responsivity and controllable recovery ultraviolet detector based on a WO3 gate AlGaN/GaN heterostructure with an integrated micro-heater", Journal of Materials Chemistry C, vol.8, no.16, pp.5409, 2020.
9.
Jianwen Sun, Dong Hu, Zewen Liu, Luke M. Middelburg, Sten Vollebregt, Pasqualina M. Sarro, Guoqi Zhang, "Low power AlGaN/GaN MEMS pressure sensor for high vacuum application", Sensors and Actuators A: Physical, vol.314, pp.112217, 2020.
10.
Jianwen Sun, Teng Zhan, Zewen Liu, Junxi Wang, Xiaoyan Yi, Pasqualina M. Sarro, Guoqi Zhang, "Suspended tungsten trioxide (WO3) gate AlGaN/GaN heterostructure deep ultraviolet detectors with integrated micro-heater", Optics Express, vol.27, no.25, pp.36405, 2019.
