Contents 1. Indium Phosphide Integrated Nanophotonic Platform
Indium phosphide (InP) underpins a range of nanophotonic platforms which include lasers and amplifiers. InP integrated nanophotonics offers a natural step in miniaturisation for a wide range of InP photonic integrated circuits (PICs) [1]–[7] with its high-efficiency optoelectronic processes. The InP membrane on silicon (IMOS) [8], [9] platform presented in this work offers the integration of active and passive building blocks, such as lasers, detectors and high-index-contrast waveguide devices, monolithically in a single micron-thick membrane layer on silicon with submicron waveguide layer. The use of a wafer-level approach avoids die-level assembly steps and multiple elements are integrated within the same epitaxial wafer. Optical interfaces between separately-processed wafers are removed, providing a powerful route to nanoscale miniaturisation and circuit level yield-performance improvements in a scaleable process. Using a silicon substrate enables a route to further integration with electronics and efficient heatsinking.
Platform approach for the integration of active and passive components in one inp membrane on silicon (IMOS)
