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A 220-GHz InP DHBT Power Amplifier With Integrated Planar Spatial Power Combiner | IEEE Journals & Magazine | IEEE Xplore

A 220-GHz InP DHBT Power Amplifier With Integrated Planar Spatial Power Combiner


Abstract:

In this letter, we present a research on the application possibility of the integrated planar spatial (IPS) combiner in terahertz monolithic integrated circuits (TMICs). ...Show More

Abstract:

In this letter, we present a research on the application possibility of the integrated planar spatial (IPS) combiner in terahertz monolithic integrated circuits (TMICs). The IPS combiner has several attractive characters, such as low loss and good port-to-port isolation. Measured insertion loss of the back-to-back four-way IPS combiner prototype is less than 1.65 dB from 220 to 260 GHz. Then, the IPS power combiner is applied to a four-way six-stage common-emitter InP double heterojunction bipolar transistor amplifier based on a 0.5-μm process. With the help of the IPS combiner and the compact circuit design, this letter greatly improves the output power and output power density compared with other TMICs of the same InP HBT technology. The output power density per unit emitter length (output stage) is 0.51 mW/μ m, which is at the same level of amplifiers based on the 0.25-μm InP HBT technology.
Published in: IEEE Microwave and Wireless Components Letters ( Volume: 29, Issue: 3, March 2019)
Page(s): 225 - 227
Date of Publication: 27 January 2019

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I. Introduction

Terahertz monolithic integrated circuits (TMICs) have been a hot research issue for their promising applications in high-data-rate communication and high resolution imaging system. Power amplifier is an essential constituent part in many successful systems. Combiners used in these power amplifiers and small-signal amplifiers are the Wilkinson power combiner [1], [2], Dolph–Chebyshev combiner [3]–[5], and Tee-junction combiner [4]–[7]. These -band amplifiers are with high small-signal gain and high output power with advanced 0.25- InP double heterojunction bipolar transistor (DHBT) and 35-nm InP HEMT technologies. The lack of beyond 200-GHz workable power amplifier limits the use of the low-cost 0.5- InP HBT/DHBT technology which does not require complex fabrication steps such as e-beam lithography and refractory contact metal deposition.

References

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