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A Broadband Model Over 1–325 GHz for GSG Pad Structure in InP HBT Technology | IEEE Conference Publication | IEEE Xplore

A Broadband Model Over 1–325 GHz for GSG Pad Structure in InP HBT Technology


Abstract:

A broadband model for Ground-Signal-Ground (GSG) pad in InP HBT technology is presented. The inductive parasitics of the structure is considered. A method to analytically...Show More

Abstract:

A broadband model for Ground-Signal-Ground (GSG) pad in InP HBT technology is presented. The inductive parasitics of the structure is considered. A method to analytically extract the model parameters is proposed. For model extraction convenience, the pad is designed as structure of one-side. The model renders excellent agreement with the measured and simulated data over 1 to 325 GHz, for a pad structure manufactured in 0.5um InP HBT technology.
Date of Conference: 07-11 May 2018
Date Added to IEEE Xplore: 06 December 2018
ISBN Information:
Conference Location: Chengdu, China

I. Introduction

With the rapid development of InP HBT technology, the operation frequency of the millimeter-wave (mmWave) and sub-mmWave integrated circuits manufactured in InP HBT have surpassed well above 200 GHz [1]. GSG pads are commonly used in most of the integrated circuit design for on-wafer testing [2]. Thus, accurate compact models are especially valuable for efficient simulation in mmWave and sub-mmWave circuit design.

References

References is not available for this document.