Abstract:
We present a fully integrated Mach-Zehnder interferometer in silicon-on-insulator technology. Modulation of the index of refraction is achieved through the plasma dispers...Show MoreMetadata
Abstract:
We present a fully integrated Mach-Zehnder interferometer in silicon-on-insulator technology. Modulation of the index of refraction is achieved through the plasma dispersion effect resulting in a bandwidth in the 10 MHz range. A particular and innovative design makes this device completely compatible with CMOS technology allowing electronic functions to be integrated on the same substrate. Measurement results, limitations due to thermooptic effect and absorption related to charge injection together with further improvements are discussed.
Published in: IEEE Photonics Technology Letters ( Volume: 12, Issue: 6, June 2000)
DOI: 10.1109/68.849076
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- IEEE Keywords
- Index Terms
- Mach-Zehnder Interferometer ,
- Silicon-on-insulator Technology ,
- Thermal Conductivity ,
- Phase Shift ,
- Current Source ,
- Voltage Drop ,
- Rise Time ,
- Focused Ion Beam ,
- Phase Modulation ,
- Rectangular Waveguide ,
- Charge Injection ,
- CMOS Technology ,
- Range Of Possible Values ,
- Kerr Effect ,
- Device Loss ,
- Porous Silicon ,
- Kramers Kronig Relations ,
- Single Waveguide ,
- Thermo-optic Effect
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Mach-Zehnder Interferometer ,
- Silicon-on-insulator Technology ,
- Thermal Conductivity ,
- Phase Shift ,
- Current Source ,
- Voltage Drop ,
- Rise Time ,
- Focused Ion Beam ,
- Phase Modulation ,
- Rectangular Waveguide ,
- Charge Injection ,
- CMOS Technology ,
- Range Of Possible Values ,
- Kerr Effect ,
- Device Loss ,
- Porous Silicon ,
- Kramers Kronig Relations ,
- Single Waveguide ,
- Thermo-optic Effect